Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case

BSS138LT1G MOSFET N-CH 50V 200MA SOT23-3 onsemi	93,886 In Stock	1 : ¥3.12000 Cut Tape (CT) 3,000 : ¥0.52959 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	50 V	200mA (Ta)	5V	3.5Ohm @ 200mA, 5V	1.5V @ 1mA	-	±20V	50 pF @ 25 V	-	225mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-3 (TO-236)	TO-236-3, SC-59, SOT-23-3
SI4431CDY-T1-GE3 MOSFET P-CH 30V 9A 8SO Vishay Siliconix	40,708 In Stock	1 : ¥5.99000 Cut Tape (CT) 2,500 : ¥2.29231 Tape & Reel (TR)	TrenchFET®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	30 V	9A (Tc)	4.5V, 10V	32mOhm @ 7A, 10V	2.5V @ 250µA	38 nC @ 10 V	±20V	1006 pF @ 15 V	-	2.5W (Ta), 4.2W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC	8-SOIC (0.154", 3.90mm Width)
FDC645N MOSFET N-CH 30V 5.5A SUPERSOT6 onsemi	4,267 In Stock 72,000 Factory	1 : ¥4.93000 Cut Tape (CT) 3,000 : ¥1.88700 Tape & Reel (TR)	PowerTrench®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	30 V	5.5A (Ta)	4.5V, 10V	26mOhm @ 6.2A, 10V	2V @ 250µA	21 nC @ 4.5 V	±12V	1460 pF @ 15 V	-	1.6W (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	SuperSOT™-6	SOT-23-6 Thin, TSOT-23-6
CSD17304Q3 MOSFET N-CH 30V 15A/56A 8VSON Texas Instruments	5,723 In Stock	1 : ¥6.90000 Cut Tape (CT) 2,500 : ¥2.86572 Tape & Reel (TR)	NexFET™	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	30 V	15A (Ta), 56A (Tc)	3V, 8V	7.5mOhm @ 17A, 8V	1.8V @ 250µA	6.6 nC @ 4.5 V	+10V, -8V	955 pF @ 15 V	-	2.7W (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	8-VSON-CLIP (3.3x3.3)	8-PowerTDFN

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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.