Single FETs, MOSFETs

Results: 9
Manufacturer
Infineon TechnologiesNexperia USA Inc.onsemiVishay Siliconix
Series
OptiMOS™PowerTrench®SIPMOS®TrenchFET®TrenchMOS™
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Drain to Source Voltage (Vdss)
40 V60 V100 V
Current - Continuous Drain (Id) @ 25°C
230mA (Ta)360mA (Ta)12.4A (Ta), 60A (Tc)24A (Ta), 100A (Tc)30A (Ta), 100A (Tc)30A (Tc)40A (Tc)64A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V6V, 10V10V
Rds On (Max) @ Id, Vgs
1.8mOhm @ 50A, 10V2.7mOhm @ 50A, 10V6.5mOhm @ 32A, 10V6.6mOhm @ 20A, 10V8mOhm @ 13A, 10V10.5mOhm @ 15A, 10V1.6Ohm @ 300mA, 10V1.6Ohm @ 350mA, 10V3.5Ohm @ 230mA, 10V
Vgs(th) (Max) @ Id
1.4V @ 26µA1.5V @ 250µA1.6V @ 250µA2V @ 49µA2V @ 85µA2.3V @ 20µA2.5V @ 250µA4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
0.7 nC @ 4.5 V0.8 nC @ 4.5 V1.4 nC @ 10 V13 nC @ 4.5 V31 nC @ 10 V48 nC @ 10 V55 nC @ 10 V85 nC @ 10 V150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
41 pF @ 25 V50 pF @ 10 V56 pF @ 10 V1160 pF @ 20 V1785 pF @ 20 V1800 pF @ 30 V3000 pF @ 50 V6800 pF @ 20 V12000 pF @ 20 V
Power Dissipation (Max)
350mW (Ta), 1.14W (Tc)360mW (Ta)2.5W (Ta), 104W (Tc)2.5W (Ta), 125W (Tc)2.5W (Ta), 83W (Tc)4.8W (Ta), 41.7W (Tc)5W (Ta), 34.7W (Tc)46W (Tc)
Operating Temperature
-55°C ~ 150°C (TA)-55°C ~ 150°C (TJ)
Supplier Device Package
8-PQFN (5x6)PG-SOT23PG-TDSON-8-1PG-TDSON-8-6PowerPAK® SO-8TO-236AB
Package / Case
8-PowerTDFNPowerPAK® SO-8TO-236-3, SC-59, SOT-23-3
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Grade
Qualification
Mounting Type
Supplier Device Package
Package / Case
TO-236AB
BSS138P,215
MOSFET N-CH 60V 360MA TO236AB
Nexperia USA Inc.
838,901
In Stock
1 : ¥1.97000
Cut Tape (CT)
3,000 : ¥0.33411
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
360mA (Ta)
10V
1.6Ohm @ 300mA, 10V
1.5V @ 250µA
0.8 nC @ 4.5 V
±20V
50 pF @ 10 V
-
350mW (Ta), 1.14W (Tc)
-55°C ~ 150°C (TA)
Automotive
AEC-Q101
Surface Mount
TO-236AB
TO-236-3, SC-59, SOT-23-3
TO-236AB
BSS138BK,215
MOSFET N-CH 60V 360MA TO236AB
Nexperia USA Inc.
459,053
In Stock
1 : ¥2.87000
Cut Tape (CT)
3,000 : ¥0.47814
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
360mA (Ta)
10V
1.6Ohm @ 350mA, 10V
1.6V @ 250µA
0.7 nC @ 4.5 V
±20V
56 pF @ 10 V
-
350mW (Ta), 1.14W (Tc)
-55°C ~ 150°C (TJ)
Automotive
AEC-Q101
Surface Mount
TO-236AB
TO-236-3, SC-59, SOT-23-3
SOT-23-3
BSS138NH6327XTSA2
MOSFET N-CH 60V 230MA SOT23-3
Infineon Technologies
120,807
In Stock
1 : ¥3.20000
Cut Tape (CT)
3,000 : ¥0.54535
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
230mA (Ta)
4.5V, 10V
3.5Ohm @ 230mA, 10V
1.4V @ 26µA
1.4 nC @ 10 V
±20V
41 pF @ 25 V
-
360mW (Ta)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
PG-SOT23
TO-236-3, SC-59, SOT-23-3
PowerPAK SO-8
SIR426DP-T1-GE3
MOSFET N-CH 40V 30A PPAK SO-8
Vishay Siliconix
40,710
In Stock
1 : ¥8.21000
Cut Tape (CT)
3,000 : ¥3.39552
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
40 V
30A (Tc)
4.5V, 10V
10.5mOhm @ 15A, 10V
2.5V @ 250µA
31 nC @ 10 V
±20V
1160 pF @ 20 V
-
4.8W (Ta), 41.7W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
PowerPAK® SO-8
PowerPAK® SO-8
PowerPAK SO-8
SIR422DP-T1-GE3
MOSFET N-CH 40V 40A PPAK SO-8
Vishay Siliconix
51,103
In Stock
1 : ¥9.28000
Cut Tape (CT)
3,000 : ¥3.84826
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
40 V
40A (Tc)
4.5V, 10V
6.6mOhm @ 20A, 10V
2.5V @ 250µA
48 nC @ 10 V
±20V
1785 pF @ 20 V
-
5W (Ta), 34.7W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
PowerPAK® SO-8
PowerPAK® SO-8
8-Power TDFN
BSC065N06LS5ATMA1
MOSFET N-CHANNEL 60V 64A 8TDSON
Infineon Technologies
8,884
In Stock
1 : ¥12.23000
Cut Tape (CT)
5,000 : ¥4.81627
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
64A (Tc)
4.5V, 10V
6.5mOhm @ 32A, 10V
2.3V @ 20µA
13 nC @ 4.5 V
±20V
1800 pF @ 30 V
-
46W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
PG-TDSON-8-6
8-PowerTDFN
PG-TDSON-8-1
BSC027N04LSGATMA1
MOSFET N-CH 40V 24A/100A TDSON
Infineon Technologies
50,554
In Stock
1 : ¥12.48000
Cut Tape (CT)
5,000 : ¥4.90897
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
40 V
24A (Ta), 100A (Tc)
4.5V, 10V
2.7mOhm @ 50A, 10V
2V @ 49µA
85 nC @ 10 V
±20V
6800 pF @ 20 V
-
2.5W (Ta), 83W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
PG-TDSON-8-1
8-PowerTDFN
8-PQFN
FDMS86101
MOSFET N-CH 100V 12.4A/60A 8PQFN
onsemi
10,135
In Stock
1 : ¥17.73000
Cut Tape (CT)
3,000 : ¥8.01200
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
100 V
12.4A (Ta), 60A (Tc)
6V, 10V
8mOhm @ 13A, 10V
4V @ 250µA
55 nC @ 10 V
±20V
3000 pF @ 50 V
-
2.5W (Ta), 104W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
8-PQFN (5x6)
8-PowerTDFN
PG-TDSON-8-1
BSC018N04LSGATMA1
MOSFET N-CH 40V 30A/100A TDSON
Infineon Technologies
33,041
In Stock
1 : ¥8.70000
Cut Tape (CT)
5,000 : ¥4.63033
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
40 V
30A (Ta), 100A (Tc)
4.5V, 10V
1.8mOhm @ 50A, 10V
2V @ 85µA
150 nC @ 10 V
±20V
12000 pF @ 20 V
-
2.5W (Ta), 125W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
PG-TDSON-8-1
8-PowerTDFN
Showing
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Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.