Single FETs, MOSFETs

Results: 4
Manufacturer
Infineon TechnologiesMicrochip TechnologyPanjit International Inc.
Series
-OptiMOS™
Packaging
BagCut Tape (CT)Digi-Reel®Tape & Reel (TR)
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
40 V60 V
Current - Continuous Drain (Id) @ 25°C
250mA (Tj)300mA (Ta)350mA (Tj)15A (Ta), 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V5V, 10V
Rds On (Max) @ Id, Vgs
6.7mOhm @ 50A, 10V3Ohm @ 1A, 10V3Ohm @ 500mA, 10V8Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id
2.2V @ 35µA2.4V @ 1mA2.5V @ 250µA3.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
0.8 nC @ 5 V67 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
35 pF @ 25 V60 pF @ 25 V65 pF @ 25 V5100 pF @ 30 V
Power Dissipation (Max)
500mW (Ta)1W (Tc)2.5W (Ta), 69W (Tc)
Mounting Type
Surface MountThrough Hole
Supplier Device Package
PG-TDSON-8-5SOT-23TO-92-3
Package / Case
8-PowerTDFNTO-226-3, TO-92-3 (TO-226AA)TO-236-3, SC-59, SOT-23-3
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Grade
Qualification
Mounting Type
Supplier Device Package
Package / Case
8-Power TDFN
BSC067N06LS3GATMA1
MOSFET N-CH 60V 15A/50A TDSON
Infineon Technologies
3,626
In Stock
1 : ¥12.15000
Cut Tape (CT)
5,000 : ¥4.78609
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
15A (Ta), 50A (Tc)
4.5V, 10V
6.7mOhm @ 50A, 10V
2.2V @ 35µA
67 nC @ 10 V
±20V
5100 pF @ 30 V
-
2.5W (Ta), 69W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
PG-TDSON-8-5
8-PowerTDFN
TO-92-3(StandardBody),TO-226_straightlead
VN0104N3-G
MOSFET N-CH 40V 350MA TO92-3
Microchip Technology
1,672
In Stock
1 : ¥6.40000
Bag
-
Bag
Active
N-Channel
MOSFET (Metal Oxide)
40 V
350mA (Tj)
5V, 10V
3Ohm @ 1A, 10V
2.4V @ 1mA
-
±20V
65 pF @ 25 V
-
1W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
TO-92-3
TO-226-3, TO-92-3 (TO-226AA)
SOT-23-3
2N7002K-AU_R1_000A2
60V N-CHANNEL ENHANCEMENT MODE M
Panjit International Inc.
13,122
In Stock
1 : ¥1.72000
Cut Tape (CT)
3,000 : ¥0.30083
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
300mA (Ta)
4.5V, 10V
3Ohm @ 500mA, 10V
2.5V @ 250µA
0.8 nC @ 5 V
±20V
35 pF @ 25 V
-
500mW (Ta)
-55°C ~ 150°C (TJ)
Automotive
AEC-Q101
Surface Mount
SOT-23
TO-236-3, SC-59, SOT-23-3
TO-92-3(StandardBody),TO-226_straightlead
VP0104N3-G
MOSFET P-CH 40V 250MA TO92-3
Microchip Technology
0
In Stock
Check Lead Time
1 : ¥8.37000
Bag
-
Bag
Active
P-Channel
MOSFET (Metal Oxide)
40 V
250mA (Tj)
5V, 10V
8Ohm @ 500mA, 10V
3.5V @ 1mA
-
±20V
60 pF @ 25 V
-
1W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
TO-92-3
TO-226-3, TO-92-3 (TO-226AA)
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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.