Single FETs, MOSFETs

Results: 9
Manufacturer
EPCInfineon TechnologiesLittelfuse Inc.onsemi
Series
eGaN®OptiMOS™OptiMOS™ 6OptiMOS™-5StrongIRFET™ 2TrenchP™UniFET™
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)Tube
FET Type
N-ChannelP-Channel
Technology
GaNFET (Gallium Nitride)MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
80 V100 V150 V250 V
Current - Continuous Drain (Id) @ 25°C
15A (Ta), 97A (Tc)17A (Ta), 98A (Tc)29A (Ta)33A (Tc)140A (Tc)174A (Tc)176A (Tc)180A (Tc)300A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
5V6V, 10V8V, 10V10V
Rds On (Max) @ Id, Vgs
1.5mOhm @ 150A, 10V1.7mOhm @ 100A, 10V2mOhm @ 100A, 10V4.4mOhm @ 87A, 10V5.5mOhm @ 60A, 10V6mOhm @ 16A, 5V6mOhm @ 25A, 10V12mOhm @ 70A, 10V94mOhm @ 16.5A, 10V
Vgs(th) (Max) @ Id
2.5V @ 4mA3.3V @ 50µA3.8V @ 250µA3.8V @ 55µA4V @ 250µA4.1V @ 270µA4.6V @ 264µA5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
7.4 nC @ 5 V33 nC @ 10 V48 nC @ 10 V54 nC @ 10 V100 nC @ 10 V195 nC @ 10 V211 nC @ 10 V400 nC @ 10 V
Vgs (Max)
+6V, -4V±15V±20V±30V
Input Capacitance (Ciss) (Max) @ Vds
840 pF @ 50 V851 pF @ 50 V2135 pF @ 25 V2500 pF @ 40 V2500 pF @ 50 V8000 pF @ 75 V16000 pF @ 50 V31400 pF @ 25 V
Power Dissipation (Max)
3W (Ta), 107W (Tc)3W (Ta), 125W (Tc)235W (Tc)300W (Tc)313W (Tc)375W (Tc)568W (Tc)-
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)-40°C ~ 150°C (TJ)
Grade
-Automotive
Qualification
-AEC-Q101
Supplier Device Package
DiePG-HSOF-8-1PG-TDSON-8 FLPG-TO252-3PG-TO263-3PG-TO263-7TO-263 (D2PAK)TO-268AA
Package / Case
8-PowerSFN8-PowerTDFNDieTO-252-3, DPAK (2 Leads + Tab), SC-63TO-263-3, D2PAK (2 Leads + Tab), TO-263ABTO-263-7, D2PAK (6 Leads + Tab)TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Grade
Qualification
Mounting Type
Supplier Device Package
Package / Case
23,056
In Stock
1 : ¥17.32000
Cut Tape (CT)
5,000 : ¥7.51445
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
100 V
15A (Ta), 97A (Tc)
8V, 10V
6mOhm @ 25A, 10V
3.3V @ 50µA
33 nC @ 10 V
±20V
2500 pF @ 50 V
-
3W (Ta), 125W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
PG-TDSON-8 FL
8-PowerTDFN
EPC2204A
EPC2204A
TRANS GAN 80V .006OHM AECQ101
EPC
17,519
In Stock
1 : ¥23.81000
Cut Tape (CT)
2,500 : ¥10.71944
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
GaNFET (Gallium Nitride)
80 V
29A (Ta)
5V
6mOhm @ 16A, 5V
2.5V @ 4mA
7.4 nC @ 5 V
+6V, -4V
851 pF @ 50 V
-
-
-40°C ~ 150°C (TJ)
Automotive
AEC-Q101
Surface Mount
Die
Die
x-xSOF-8-1
IPT015N10N5ATMA1
MOSFET N-CH 100V 300A 8HSOF
Infineon Technologies
22,145
In Stock
1 : ¥49.92000
Cut Tape (CT)
2,000 : ¥26.53364
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
100 V
300A (Tc)
6V, 10V
1.5mOhm @ 150A, 10V
3.8V @ 250µA
211 nC @ 10 V
±20V
16000 pF @ 50 V
-
375W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
PG-HSOF-8-1
8-PowerSFN
TO-263-7, D2Pak
IPB044N15N5ATMA1
MOSFET N-CH 150V 174A TO263-7
Infineon Technologies
1,265
In Stock
1 : ¥51.89000
Cut Tape (CT)
1,000 : ¥29.41688
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
150 V
174A (Tc)
8V, 10V
4.4mOhm @ 87A, 10V
4.6V @ 264µA
100 nC @ 10 V
±20V
8000 pF @ 75 V
-
300W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
PG-TO263-7
TO-263-7, D2PAK (6 Leads + Tab)
TO-263-7, D2Pak
IPB017N10N5LFATMA1
MOSFET N-CH 100V 180A TO263-7
Infineon Technologies
652
In Stock
1 : ¥62.89000
Cut Tape (CT)
1,000 : ¥35.67997
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
100 V
180A (Tc)
10V
1.7mOhm @ 100A, 10V
4.1V @ 270µA
195 nC @ 10 V
±20V
840 pF @ 50 V
-
313W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
PG-TO263-7
TO-263-7, D2PAK (6 Leads + Tab)
TO-268
IXTT140P10T
MOSFET P-CH 100V 140A TO268
Littelfuse Inc.
349
In Stock
1 : ¥163.38000
Tube
Tube
Active
P-Channel
MOSFET (Metal Oxide)
100 V
140A (Tc)
10V
12mOhm @ 70A, 10V
4V @ 250µA
400 nC @ 10 V
±15V
31400 pF @ 25 V
-
568W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
TO-268AA
TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
1,785
In Stock
1 : ¥13.96000
Cut Tape (CT)
2,000 : ¥5.86899
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
80 V
17A (Ta), 98A (Tc)
6V, 10V
5.5mOhm @ 60A, 10V
3.8V @ 55µA
54 nC @ 10 V
±20V
2500 pF @ 40 V
-
3W (Ta), 107W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
PG-TO252-3
TO-252-3, DPAK (2 Leads + Tab), SC-63
TO-263
FDB33N25TM
MOSFET N-CH 250V 33A D2PAK
onsemi
0
In Stock
Check Lead Time
1 : ¥25.04000
Cut Tape (CT)
800 : ¥10.18868
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
250 V
33A (Tc)
10V
94mOhm @ 16.5A, 10V
5V @ 250µA
48 nC @ 10 V
±30V
2135 pF @ 25 V
-
235W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
TO-263 (D2PAK)
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IPB020N10N5LFATMA1
MOSFET N-CH 100V 176A TO263-3
Infineon Technologies
0
In Stock
Check Lead Time
1 : ¥60.01000
Cut Tape (CT)
1,000 : ¥34.05008
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
100 V
176A (Tc)
10V
2mOhm @ 100A, 10V
4.1V @ 270µA
195 nC @ 10 V
±20V
840 pF @ 50 V
-
313W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
PG-TO263-3
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.