Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case

IRF5305PBF MOSFET P-CH 55V 31A TO220AB Infineon Technologies	37,848 In Stock	1 : ¥11.33000 Tube	HEXFET®	Tube	Active	P-Channel	MOSFET (Metal Oxide)	55 V	31A (Tc)	10V	60mOhm @ 16A, 10V	4V @ 250µA	63 nC @ 10 V	±20V	1200 pF @ 25 V	-	110W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
FDT458P MOSFET P-CH 30V 3.4A SOT223-4 onsemi	53 In Stock	1 : ¥6.32000 Cut Tape (CT) 4,000 : ¥2.40810 Tape & Reel (TR)	PowerTrench®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	30 V	3.4A (Ta)	4.5V, 10V	130mOhm @ 3.4A, 10V	3V @ 250µA	3.5 nC @ 10 V	±20V	205 pF @ 15 V	-	3W (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	SOT-223-4	TO-261-4, TO-261AA

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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.