Single FETs, MOSFETs

Results: 5
Manufacturer
Infineon TechnologiesNexperia USA Inc.onsemiVishay Siliconix
Series
-OptiMOS™-5PowerTrench®TrenchFET®
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
12 V20 V40 V60 V150 V
Current - Continuous Drain (Id) @ 25°C
1.6A (Ta)4.5A (Ta)5A (Tc)50A (Tc)90A (Tj)
Drive Voltage (Max Rds On, Min Rds On)
1.8V, 4.5V2.5V, 4.5V4.5V, 10V6V, 10V
Rds On (Max) @ Id, Vgs
5mOhm @ 20A, 10V9.4mOhm @ 17A, 10V34mOhm @ 3A, 4.5V50mOhm @ 3.5A, 10V261mOhm @ 1.6A, 10V
Vgs(th) (Max) @ Id
1V @ 250µA1.25V @ 250µA2.2V @ 29µA2.5V @ 250µA4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
5 nC @ 10 V13 nC @ 4.5 V17 nC @ 4.5 V36.7 nC @ 10 V155 nC @ 10 V
Vgs (Max)
±8V±12V±16V±20V
Input Capacitance (Ciss) (Max) @ Vds
225 pF @ 75 V870 pF @ 4 V1465 pF @ 10 V2500 pF @ 30 V6675 pF @ 20 V
Power Dissipation (Max)
490mW (Ta), 5.435W (Tc)1.5W (Ta)2W (Tc)71W (Tc)136W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)
Supplier Device Package
PG-TSDSON-8-33SOT-23-3SOT-23-3 (TO-236)TO-236ABTO-252AA
Package / Case
8-PowerTDFNTO-236-3, SC-59, SOT-23-3TO-252-3, DPAK (2 Leads + Tab), SC-63
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Grade
Qualification
Mounting Type
Supplier Device Package
Package / Case
SOT-23-3
FDN86246
MOSFET N-CH 150V 1.6A SUPERSOT3
onsemi
3,322
In Stock
1 : ¥10.59000
Cut Tape (CT)
3,000 : ¥4.38702
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
150 V
1.6A (Ta)
6V, 10V
261mOhm @ 1.6A, 10V
4V @ 250µA
5 nC @ 10 V
±20V
225 pF @ 75 V
-
1.5W (Ta)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3
TO-236AB
PMV30XPEAR
MOSFET P-CH 20V 4.5A TO236AB
Nexperia USA Inc.
27,648
In Stock
1 : ¥3.53000
Cut Tape (CT)
3,000 : ¥0.95568
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
20 V
4.5A (Ta)
2.5V, 4.5V
34mOhm @ 3A, 4.5V
1.25V @ 250µA
17 nC @ 4.5 V
±12V
1465 pF @ 10 V
-
490mW (Ta), 5.435W (Tc)
-55°C ~ 150°C (TJ)
Automotive
AEC-Q101
Surface Mount
TO-236AB
TO-236-3, SC-59, SOT-23-3
SOT-23-3
SQ2315ES-T1_GE3
MOSFET P-CH 12V 5A SOT23-3
Vishay Siliconix
20,429
In Stock
1 : ¥4.76000
Cut Tape (CT)
3,000 : ¥1.59853
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
12 V
5A (Tc)
1.8V, 4.5V
50mOhm @ 3.5A, 10V
1V @ 250µA
13 nC @ 4.5 V
±8V
870 pF @ 4 V
-
2W (Tc)
-55°C ~ 150°C (TJ)
Automotive
AEC-Q101
Surface Mount
SOT-23-3 (TO-236)
TO-236-3, SC-59, SOT-23-3
IAUZ40N06S5L050ATMA1
IAUZ40N06S5L050ATMA1
MOSFET_)40V 60V) PG-TSDSON-8
Infineon Technologies
4,077
In Stock
1 : ¥11.08000
Cut Tape (CT)
5,000 : ¥4.36785
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Active
N-Channel
MOSFET (Metal Oxide)
60 V
90A (Tj)
4.5V, 10V
5mOhm @ 20A, 10V
2.2V @ 29µA
36.7 nC @ 10 V
±16V
2500 pF @ 30 V
-
71W (Tc)
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Surface Mount
PG-TSDSON-8-33
8-PowerTDFN
TO-252
SQD50P04-09L_GE3
MOSFET P-CH 40V 50A TO252
Vishay Siliconix
9,679
In Stock
1 : ¥22.99000
Cut Tape (CT)
2,000 : ¥11.17790
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
40 V
50A (Tc)
4.5V, 10V
9.4mOhm @ 17A, 10V
2.5V @ 250µA
155 nC @ 10 V
±20V
6675 pF @ 20 V
-
136W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
TO-252AA
TO-252-3, DPAK (2 Leads + Tab), SC-63
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Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.