Single FETs, MOSFETs

Results: 3
Series
HEXFET®OptiMOS™
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
60 V100 V
Current - Continuous Drain (Id) @ 25°C
13A (Tc)17A (Tc)100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4V, 10V4.5V, 10V10V
Rds On (Max) @ Id, Vgs
11mOhm @ 100A, 10V105mOhm @ 10A, 10V205mOhm @ 7.8A, 10V
Vgs(th) (Max) @ Id
2V @ 250µA2V @ 5.55mA4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
34 nC @ 5 V58 nC @ 10 V281 nC @ 10 V
Vgs (Max)
±16V±20V
Input Capacitance (Ciss) (Max) @ Vds
760 pF @ 25 V800 pF @ 25 V8500 pF @ 30 V
Power Dissipation (Max)
66W (Tc)79W (Tc)300W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)
Supplier Device Package
PG-TO263-3-2TO-252AA (DPAK)
Package / Case
TO-252-3, DPAK (2 Leads + Tab), SC-63TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
TO252-3
IRLR3410TRLPBF
MOSFET N-CH 100V 17A DPAK
Infineon Technologies
40,623
In Stock
1 : ¥6.16000
Cut Tape (CT)
3,000 : ¥3.27057
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
100 V
17A (Tc)
4V, 10V
105mOhm @ 10A, 10V
2V @ 250µA
34 nC @ 5 V
±16V
800 pF @ 25 V
-
79W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
TO-252AA (DPAK)
TO-252-3, DPAK (2 Leads + Tab), SC-63
TO252-3
IRFR5410TRPBF
MOSFET P-CH 100V 13A DPAK
Infineon Technologies
21,860
In Stock
1 : ¥11.58000
Cut Tape (CT)
2,000 : ¥4.78090
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
100 V
13A (Tc)
10V
205mOhm @ 7.8A, 10V
4V @ 250µA
58 nC @ 10 V
±20V
760 pF @ 25 V
-
66W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
TO-252AA (DPAK)
TO-252-3, DPAK (2 Leads + Tab), SC-63
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IPB110P06LMATMA1
MOSFET P-CH 60V 100A TO263-3
Infineon Technologies
896
In Stock
1 : ¥33.74000
Cut Tape (CT)
1,000 : ¥17.45454
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
60 V
100A (Tc)
4.5V, 10V
11mOhm @ 100A, 10V
2V @ 5.55mA
281 nC @ 10 V
±20V
8500 pF @ 30 V
-
300W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
PG-TO263-3-2
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.