Single FETs, MOSFETs

Results: 2
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Drain to Source Voltage (Vdss)
30 V60 V
Current - Continuous Drain (Id) @ 25°C
380mA (Ta)900mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)
1.8V, 4.5V5V, 10V
Rds On (Max) @ Id, Vgs
460mOhm @ 200mA, 4.5V2Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id
950mV @ 250µA2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
0.3 nC @ 4.5 V5.5 nC @ 4.5 V
Vgs (Max)
±8V±20V
Input Capacitance (Ciss) (Max) @ Vds
50 pF @ 25 V73 pF @ 25 V
Power Dissipation (Max)
370mW (Ta)400mW
Stocking Options
Environmental Options
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Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
SOT-23-3
2N7002K-7
MOSFET N-CH 60V 380MA SOT23-3
Diodes Incorporated
332,891
In Stock
56,901,000
Factory
1 : ¥1.72000
Cut Tape (CT)
3,000 : ¥0.28983
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
380mA (Ta)
5V, 10V
2Ohm @ 500mA, 10V
2.5V @ 1mA
0.3 nC @ 4.5 V
±20V
50 pF @ 25 V
-
370mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3
SOT-23-3
DMN3731U-7
MOSFET N-CH 30V 900MA SOT23
Diodes Incorporated
77,604
In Stock
1 : ¥1.97000
Cut Tape (CT)
3,000 : ¥0.33605
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
30 V
900mA (Ta)
1.8V, 4.5V
460mOhm @ 200mA, 4.5V
950mV @ 250µA
5.5 nC @ 4.5 V
±8V
73 pF @ 25 V
-
400mW
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3
Showing
of 2

Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.