Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case

IRF9520PBF MOSFET P-CH 100V 6.8A TO220AB Vishay Siliconix	8,614 In Stock	1 : ¥10.18000 Tube	-	Tube	Active	P-Channel	MOSFET (Metal Oxide)	100 V	6.8A (Tc)	10V	600mOhm @ 4.1A, 10V	4V @ 250µA	18 nC @ 10 V	±20V	390 pF @ 25 V	-	60W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
SCT1000N170 HIP247 IN LINE STMicroelectronics	541 In Stock	1 : ¥72.99000 Tube	-	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1700 V	7A (Tc)	20V	1.3Ohm @ 3A, 20V	3.5V @ 1mA	13.3 nC @ 20 V	+22V, -10V	133 pF @ 1000 V	-	96W (Tc)	-55°C ~ 200°C (TJ)	Through Hole	HiP247™	TO-247-3

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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.