Single FETs, MOSFETs

Results: 12
Manufacturer
Infineon TechnologiesLittelfuse Inc.onsemiQorvoRohm SemiconductorWolfspeed, Inc.
Series
-C2M™DepletionOptiMOS™Polar P3™
Packaging
BulkCut Tape (CT)Digi-Reel®Tape & Reel (TR)Tube
FET Type
N-ChannelP-Channel
Technology
MOSFET (Metal Oxide)SiCFET (Cascode SiCJFET)SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
50 V60 V1000 V1200 V1500 V1700 V2000 V4500 V
Current - Continuous Drain (Id) @ 25°C
130mA (Ta)200mA (Tc)1A (Tc)1A (Tj)2A (Tj)3A (Tc)4A (Tc)5.3A (Tc)7.6A (Tc)50A (Tc)103A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
0V5V10V12V18V20V-
Rds On (Max) @ Id, Vgs
11mOhm @ 50A, 10V28mOhm @ 60A, 20V515mOhm @ 5A, 12V1.4Ohm @ 2A, 20V1.5Ohm @ 1.1A, 18V5.5Ohm @ 1.5A, 0V6.5Ohm @ 1A, 0V7.3Ohm @ 1.5A, 10V10Ohm @ 100mA, 5V16Ohm @ 500mA, 0V40Ohm @ 500mA, 10V750Ohm @ 10mA, 10V
Vgs(th) (Max) @ Id
2V @ 250µA4V @ 23µA4V @ 250µA4V @ 410µA4V @ 500µA4.3V @ 20mA4.5V @ 250µA5V @ 250µA6V @ 10mA6.5V @ 250µA-
Gate Charge (Qg) (Max) @ Vgs
2.2 nC @ 10 V10.4 nC @ 10 V13 nC @ 20 V14 nC @ 18 V23.5 nC @ 10 V27.5 nC @ 15 V33 nC @ 10 V37.5 nC @ 5 V38.6 nC @ 10 V47 nC @ 5 V110 nC @ 5 V203 nC @ 20 V
Vgs (Max)
±20V+22V, -6V+25V, -10V+25V, -15V±25V±30V
Input Capacitance (Ciss) (Max) @ Vds
36 pF @ 5 V184 pF @ 800 V200 pF @ 1000 V256 pF @ 25 V646 pF @ 25 V740 pF @ 100 V1020 pF @ 25 V1375 pF @ 25 V2700 pF @ 30 V2890 pF @ 800 V3090 pF @ 25 V3650 pF @ 25 V
FET Feature
-Depletion Mode
Power Dissipation (Max)
225mW (Ta)2.5W (Ta), 50W (Tc)44W (Tc)78W (Tc)100W (Tc)113W (Tc)125W (Tc)250W (Tc)290W (Tc)535W (Tc)568W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)175°C (TJ)
Mounting Type
Surface MountThrough Hole
Supplier Device Package
D2PAK (7-Lead)PG-TDSON-8-5SOT-23-3 (TO-236)TO-247-3TO-247HVTO-263AATO-268TO-268AA
Package / Case
8-PowerTDFNTO-236-3, SC-59, SOT-23-3TO-247-3TO-247-3 VariantTO-263-3, D2PAK (2 Leads + Tab), TO-263ABTO-263-7 (Straight Leads)TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Stocking Options
Environmental Options
Media
Marketplace Product
12Results
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
8-Power TDFN
BSC110N06NS3GATMA1
MOSFET N-CH 60V 50A TDSON-8
Infineon Technologies
8,160
In Stock
1 : ¥8.29000
Cut Tape (CT)
5,000 : ¥3.27264
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
50A (Tc)
10V
11mOhm @ 50A, 10V
4V @ 23µA
33 nC @ 10 V
±20V
2700 pF @ 30 V
-
2.5W (Ta), 50W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
PG-TDSON-8-5
8-PowerTDFN
TO-247-3L
UF3C170400K3S
SICFET N-CH 1700V 7.6A TO247-3
Qorvo
75,278
In Stock
1 : ¥50.24000
Tube
-
Tube
Active
N-Channel
SiCFET (Cascode SiCJFET)
1700 V
7.6A (Tc)
12V
515mOhm @ 5A, 12V
6V @ 10mA
27.5 nC @ 15 V
±25V
740 pF @ 100 V
-
100W (Tc)
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247-3
TO-263AB
IXTA1N200P3HV
MOSFET N-CH 2000V 1A TO263
Littelfuse Inc.
647
In Stock
1 : ¥77.25000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
2000 V
1A (Tc)
10V
40Ohm @ 500mA, 10V
4V @ 250µA
23.5 nC @ 10 V
±20V
646 pF @ 25 V
-
125W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
TO-263AA
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
C3M0065090J
C2M1000170J
SICFET N-CH 1700V 5.3A D2PAK
Wolfspeed, Inc.
324
In Stock
1 : ¥87.60000
Bulk
Bulk
Active
N-Channel
SiCFET (Silicon Carbide)
1700 V
5.3A (Tc)
20V
1.4Ohm @ 2A, 20V
4V @ 500µA
13 nC @ 20 V
+25V, -10V
200 pF @ 1000 V
-
78W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
D2PAK (7-Lead)
TO-263-7 (Straight Leads)
SCT2xxxNYTB
SCT2H12NYTB
SICFET N-CH 1700V 4A TO268
Rohm Semiconductor
1,527
In Stock
1 : ¥52.46000
Cut Tape (CT)
400 : ¥33.66185
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
SiCFET (Silicon Carbide)
1700 V
4A (Tc)
18V
1.5Ohm @ 1.1A, 18V
4V @ 410µA
14 nC @ 18 V
+22V, -6V
184 pF @ 800 V
-
44W (Tc)
175°C (TJ)
Surface Mount
TO-268
TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
TO-268
IXTT2N170D2
MOSFET N-CH 1700V 2A TO268
Littelfuse Inc.
118
In Stock
1 : ¥247.94000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
1700 V
2A (Tj)
-
6.5Ohm @ 1A, 0V
-
110 nC @ 5 V
±20V
3650 pF @ 25 V
Depletion Mode
568W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
TO-268AA
TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
TO-247-3
NTHL020N120SC1
SICFET N-CH 1200V 103A TO247-3
onsemi
462
In Stock
1 : ¥305.16000
Tube
-
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
103A (Tc)
20V
28mOhm @ 60A, 20V
4.3V @ 20mA
203 nC @ 20 V
+25V, -15V
2890 pF @ 800 V
-
535W (Tc)
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247-3
SOT 23-3
BSS84LT7G
MOSFET P-CH 50V 130MA SOT23-3
onsemi
6,102
In Stock
17,500
Factory
1 : ¥3.04000
Cut Tape (CT)
3,500 : ¥0.50760
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
50 V
130mA (Ta)
5V
10Ohm @ 100mA, 5V
2V @ 250µA
2.2 nC @ 10 V
±20V
36 pF @ 5 V
-
225mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3 (TO-236)
TO-236-3, SC-59, SOT-23-3
TO-263AB
IXTA3N100D2
MOSFET N-CH 1000V 3A TO263
Littelfuse Inc.
416
In Stock
1 : ¥50.41000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
1000 V
3A (Tc)
-
5.5Ohm @ 1.5A, 0V
-
37.5 nC @ 5 V
±20V
1020 pF @ 25 V
Depletion Mode
125W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
TO-263AA
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
TO 247 HV EP
IXTH1N170DHV
MOSFET N-CH 1700V 1A TO247HV
Littelfuse Inc.
9
In Stock
1 : ¥158.04000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
1700 V
1A (Tj)
0V
16Ohm @ 500mA, 0V
4.5V @ 250µA
47 nC @ 5 V
±20V
3090 pF @ 25 V
Depletion Mode
290W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
TO-247HV
TO-247-3 Variant
TO-263AB
IXTA3N150HV
MOSFET N-CH 1500V 3A TO263
Littelfuse Inc.
0
In Stock
Check Lead Time
1 : ¥88.17000
Tube
-
Tube
Active
N-Channel
MOSFET (Metal Oxide)
1500 V
3A (Tc)
10V
7.3Ohm @ 1.5A, 10V
5V @ 250µA
38.6 nC @ 10 V
±30V
1375 pF @ 25 V
-
250W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
TO-263AA
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
TO-268
IXTT02N450HV
MOSFET N-CH 4500V 200MA TO268
Littelfuse Inc.
0
In Stock
Check Lead Time
1 : ¥262.14000
Tube
-
Tube
Active
N-Channel
MOSFET (Metal Oxide)
4500 V
200mA (Tc)
10V
750Ohm @ 10mA, 10V
6.5V @ 250µA
10.4 nC @ 10 V
±20V
256 pF @ 25 V
-
113W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
TO-268AA
TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Showing
of 12

Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.