Single FETs, MOSFETs

Results: 5
Manufacturer
Diodes IncorporatedNexperia USA Inc.Texas Instruments
Series
-FemtoFET™NexFET™
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
20 V30 V
Current - Continuous Drain (Id) @ 25°C
1.2A (Ta)1.5A (Ta)3A (Ta)5.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
1.5V, 4.5V1.8V, 4.5V1.8V, 8V
Rds On (Max) @ Id, Vgs
35mOhm @ 900mA, 8V121mOhm @ 500mA, 8V240mOhm @ 500mA, 8V320mOhm @ 1.2A, 4.5V460mOhm @ 200mA, 4.5V
Vgs(th) (Max) @ Id
950mV @ 250µA1.1V @ 250µA1.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
1.3 nC @ 4.5 V1.4 nC @ 4.5 V2.04 nC @ 8 V3.5 nC @ 4.5 V5.5 nC @ 4.5 V
Vgs (Max)
-12V±8V12V
Input Capacitance (Ciss) (Max) @ Vds
46 pF @ 10 V73 pF @ 25 V190 pF @ 15 V195 pF @ 15 V533 pF @ 10 V
Power Dissipation (Max)
350mW (Ta), 5.43W (Tc)500mW (Ta)520mW (Ta)1.4W (Ta)
Supplier Device Package
3-PICOSTARDFN1006B-3X2-DFN1006-3
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
3-XQFN
PMZB290UNE2YL
MOSFET N-CH 20V 1.2A DFN1006B-3
Nexperia USA Inc.
30,617
In Stock
1 : ¥3.12000
Cut Tape (CT)
10,000 : ¥0.40772
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
20 V
1.2A (Ta)
1.5V, 4.5V
320mOhm @ 1.2A, 4.5V
950mV @ 250µA
1.4 nC @ 4.5 V
±8V
46 pF @ 10 V
-
350mW (Ta), 5.43W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
DFN1006B-3
3-XFDFN
CSDxxxxF4T
CSD17484F4
MOSFET N-CH 30V 3A 3PICOSTAR
Texas Instruments
61,002
In Stock
1 : ¥3.20000
Cut Tape (CT)
3,000 : ¥0.71570
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
30 V
3A (Ta)
1.8V, 8V
121mOhm @ 500mA, 8V
1.1V @ 250µA
2.04 nC @ 8 V
12V
195 pF @ 15 V
-
500mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
3-PICOSTAR
3-XFDFN
CSDxxxxF4T
CSD17483F4
MOSFET N-CH 30V 1.5A 3PICOSTAR
Texas Instruments
100,731
In Stock
1 : ¥3.53000
Cut Tape (CT)
3,000 : ¥0.64179
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
30 V
1.5A (Ta)
1.8V, 4.5V
240mOhm @ 500mA, 8V
1.1V @ 250µA
1.3 nC @ 4.5 V
12V
190 pF @ 15 V
-
500mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
3-PICOSTAR
3-XFDFN
X2-DFN1006-3
DMN3731UFB4-7B
MOSFET N-CH 30V 1.2A 3DFN
Diodes Incorporated
7,040
In Stock
4,300,000
Factory
1 : ¥2.38000
Cut Tape (CT)
10,000 : ¥0.30637
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
30 V
1.2A (Ta)
1.8V, 4.5V
460mOhm @ 200mA, 4.5V
950mV @ 250µA
5.5 nC @ 4.5 V
±8V
73 pF @ 25 V
-
520mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
X2-DFN1006-3
3-XFDFN
3-PICOSTAR
CSD25485F5T
MOSFET P-CH 20V 5.3A 3PICOSTAR
Texas Instruments
2,385
In Stock
1 : ¥7.96000
Cut Tape (CT)
250 : ¥3.03140
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
20 V
5.3A (Ta)
1.8V, 8V
35mOhm @ 900mA, 8V
1.3V @ 250µA
3.5 nC @ 4.5 V
-12V
533 pF @ 10 V
-
1.4W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
3-PICOSTAR
3-XFDFN
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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.