Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case

IRF1010EZPBF MOSFET N-CH 60V 75A TO220AB Infineon Technologies	9,545 In Stock	1 : ¥13.30000 Tube	HEXFET®	Tube	Active	N-Channel	MOSFET (Metal Oxide)	60 V	75A (Tc)	10V	8.5mOhm @ 51A, 10V	4V @ 100µA	86 nC @ 10 V	±20V	2810 pF @ 25 V	-	140W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
IRF3703PBF MOSFET N-CH 30V 210A TO220AB Infineon Technologies	2,019 In Stock	1 : ¥27.42000 Tube	HEXFET®	Tube	Active	N-Channel	MOSFET (Metal Oxide)	30 V	210A (Tc)	7V, 10V	2.8mOhm @ 76A, 10V	4V @ 250µA	209 nC @ 10 V	±20V	8250 pF @ 25 V	-	3.8W (Ta), 230W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3

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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.