Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case

STN3NF06L MOSFET N-CH 60V 4A SOT223 STMicroelectronics	77,831 In Stock	1 : ¥7.31000 Cut Tape (CT) 4,000 : ¥3.02542 Tape & Reel (TR)	STripFET™ II	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	60 V	4A (Tc)	5V, 10V	100mOhm @ 1.5A, 10V	2.8V @ 250µA	9 nC @ 5 V	±16V	340 pF @ 25 V	-	3.3W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	SOT-223	TO-261-4, TO-261AA
DMN67D8LW-13 MOSFET N-CH 60V 240MA SOT323 Diodes Incorporated	320,160 In Stock 160,000 Factory	1 : ¥1.89000 Cut Tape (CT) 10,000 : ¥0.18668 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	60 V	240mA (Ta)	5V, 10V	5Ohm @ 500mA, 10V	2.5V @ 250µA	0.82 nC @ 10 V	±30V	22 pF @ 25 V	-	320mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	SOT-323	SC-70, SOT-323
G35N02K N20V,RD(MAX)<13M@4.5V,RD(MAX)<18 Goford Semiconductor	2,532 In Stock	1 : ¥3.53000 Cut Tape (CT) 2,500 : ¥1.19860 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	20 V	35A (Tc)	2.5V, 4.5V	13mOhm @ 20A, 4.5V	1.2V @ 250µA	24 nC @ 4.5 V	±12V	1380 pF @ 10 V	-	40W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	TO-252	TO-252-3, DPAK (2 Leads + Tab), SC-63

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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.