Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case

BSS83PH6327XTSA1 MOSFET P-CH 60V 330MA SOT23-3 Infineon Technologies	110,992 In Stock	1 : ¥2.87000 Cut Tape (CT) 3,000 : ¥0.78376 Tape & Reel (TR)	SIPMOS®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	60 V	330mA (Ta)	4.5V, 10V	2Ohm @ 330mA, 10V	2V @ 80µA	3.57 nC @ 10 V	±20V	78 pF @ 25 V	-	360mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	PG-SOT23	TO-236-3, SC-59, SOT-23-3
BSS138NH6327XTSA2 MOSFET N-CH 60V 230MA SOT23-3 Infineon Technologies	104,873 In Stock	1 : ¥3.20000 Cut Tape (CT) 3,000 : ¥0.54533 Tape & Reel (TR)	SIPMOS®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	60 V	230mA (Ta)	4.5V, 10V	3.5Ohm @ 230mA, 10V	1.4V @ 26µA	1.4 nC @ 10 V	±20V	41 pF @ 25 V	-	360mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	PG-SOT23	TO-236-3, SC-59, SOT-23-3
BSP149H6327XTSA1 MOSFET N-CH 200V 660MA SOT223-4 Infineon Technologies	24,414 In Stock	1 : ¥10.18000 Cut Tape (CT) 1,000 : ¥4.48330 Tape & Reel (TR)	SIPMOS®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	200 V	660mA (Ta)	0V, 10V	1.8Ohm @ 660mA, 10V	1V @ 400µA	14 nC @ 5 V	±20V	430 pF @ 25 V	Depletion Mode	1.8W (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	PG-SOT223-4	TO-261-4, TO-261AA
ISS17EP06LMXTSA1 MOSFET P-CH 60V 300MA SOT23-3 Infineon Technologies	59,326 In Stock	1 : ¥2.87000 Cut Tape (CT) 3,000 : ¥0.78001 Tape & Reel (TR)	OptiMOS™	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	60 V	300mA (Ta)	4.5V, 10V	1.7Ohm @ 300mA, 10V	2V @ 34µA	1.79 nC @ 10 V	±20V	55 pF @ 30 V	-	360mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	PG-SOT23	TO-236-3, SC-59, SOT-23-3
BSP613PH6327XTSA1 MOSFET P-CH 60V 2.9A SOT223-4 Infineon Technologies	9,182 In Stock	1 : ¥10.02000 Cut Tape (CT) 1,000 : ¥4.40399 Tape & Reel (TR)	SIPMOS®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	60 V	2.9A (Ta)	10V	130mOhm @ 2.9A, 10V	4V @ 1mA	33 nC @ 10 V	±20V	875 pF @ 25 V	-	1.8W (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	PG-SOT223-4	TO-261-4, TO-261AA
BSP129H6906XTSA1 MOSFET N-CH 240V 350MA SOT223-4 Infineon Technologies	0 In Stock	Obsolete	SIPMOS™	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Obsolete	N-Channel	MOSFET (Metal Oxide)	240 V	350mA (Ta)	0V, 10V	6Ohm @ 350mA, 10V	1V @ 108µA	5.7 nC @ 5 V	±20V	108 pF @ 25 V	Depletion Mode	1.8W (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	PG-SOT223-4	TO-261-4, TO-261AA
BSP129L6327 N-CHANNEL POWER MOSFET Infineon Technologies	0 Marketplace	Unavailable Unavailable in your selected currency	SIPMOS®	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	240 V	350mA (Ta)	0V, 10V	6Ohm @ 350mA, 10V	1V @ 108µA	5.7 nC @ 5 V	±20V	108 pF @ 25 V	Depletion Mode	1.8W (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	PG-SOT223-4-21	TO-261-4, TO-261AA

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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.