Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package	Package / Case

BSS138-7-F MOSFET N-CH 50V 200MA SOT23-3 Diodes Incorporated	207,533 In Stock	1 : ¥1.64000 Cut Tape (CT) 3,000 : ¥0.28094 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	50 V	200mA (Ta)	10V	3.5Ohm @ 220mA, 10V	1.5V @ 250µA	-	±20V	50 pF @ 10 V	-	300mW (Ta)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	SOT-23-3	TO-236-3, SC-59, SOT-23-3
DMP3099LQ-7 MOSFET P-CH 30V 3.8A SOT23 T&R Diodes Incorporated	4,438 In Stock	1 : ¥2.79000 Cut Tape (CT) 3,000 : ¥0.50285 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	30 V	3.8A (Ta)	4.5V, 10V	65mOhm @ 3.8A, 10V	2.1V @ 250µA	11 nC @ 10 V	±20V	563 pF @ 25 V	-	1.08W	-55°C ~ 150°C (TJ)	Automotive	AEC-Q101	Surface Mount	SOT-23-3	TO-236-3, SC-59, SOT-23-3
PXP011-20QXJ PXP011-20QX/SOT8002/MLPAK33 Nexperia USA Inc.	2,890 In Stock	1 : ¥5.25000 Cut Tape (CT) 3,000 : ¥1.66145 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	20 V	10.5A (Ta), 56.6A (Tc)	2.5V, 4.5V	11.4mOhm @ 10.5A, 4.5V	1.25V @ 250µA	65.1 nC @ 4.5 V	±12V	4200 pF @ 10 V	-	1.8W (Ta), 50W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	MLPAK33	8-PowerVDFN
AO3413A SOT-23-3 POWER MOSFETS ROHS UMW	2,945 In Stock	1 : ¥3.69000 Cut Tape (CT) 3,000 : ¥0.82686 Tape & Reel (TR)	UMW	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	20 V	3A (Ta)	2.5V, 4.5V	66mOhm @ 3A, 4.5V	1V @ 250µA	11 nC @ 4.5 V	±8V	745 pF @ 10 V	-	1.4W (Ta)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	SOT-23	TO-236-3, SC-59, SOT-23-3

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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.