Single FETs, MOSFETs

Results: 6
Manufacturer
Infineon TechnologiesNexperia USA Inc.Rohm SemiconductorTexas Instruments
Series
-HEXFET®NexFET™
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Product Status
ActiveNot For New Designs
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
20 V30 V150 V
Current - Continuous Drain (Id) @ 25°C
100mA (Ta)150mA (Ta)1.5A (Ta)5A (Ta)24A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
1.2V, 4.5V1.5V, 4.5V1.8V, 4.5V10V
Rds On (Max) @ Id, Vgs
32.5mOhm @ 5A, 4.5V95mOhm @ 14A, 10V240mOhm @ 500mA, 8V2Ohm @ 150mA, 4.5V3.8Ohm @ 100mA, 4.5V
Vgs(th) (Max) @ Id
900mV @ 250µA1V @ 100µA1.1V @ 250µA5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
1.3 nC @ 4.5 V45 nC @ 4.5 V45 nC @ 10 V
Vgs (Max)
±10V±12V12V±30V
Input Capacitance (Ciss) (Max) @ Vds
12 pF @ 10 V15 pF @ 10 V190 pF @ 15 V890 pF @ 25 V2970 pF @ 10 V
Power Dissipation (Max)
100mW (Ta)500mW (Ta)1.7W (Ta), 12.5W (Tc)140W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)150°C (TJ)
Supplier Device Package
3-PICOSTARDFN2020MD-6TO-252AA (DPAK)VML0604VML0806
Package / Case
3-SMD, No Lead3-XFDFN6-UDFN Exposed PadTO-252-3, DPAK (2 Leads + Tab), SC-63
Stocking Options
Environmental Options
Media
Marketplace Product
6Results

Showing
of 6
Compare
Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
VML0604
RV3C002UNT2CL
MOSFET N-CH 20V 150MA VML0604
Rohm Semiconductor
137,250
In Stock
1 : ¥2.79000
Cut Tape (CT)
8,000 : ¥0.84151
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
20 V
150mA (Ta)
1.5V, 4.5V
2Ohm @ 150mA, 4.5V
1V @ 100µA
-
±10V
12 pF @ 10 V
-
100mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
VML0604
3-XFDFN
6-DFN2020MD_View 2
PMPB29XPE,115
MOSFET P-CH 20V 5A DFN2020MD-6
Nexperia USA Inc.
14,115
In Stock
1 : ¥3.28000
Cut Tape (CT)
3,000 : ¥0.94823
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
20 V
5A (Ta)
1.8V, 4.5V
32.5mOhm @ 5A, 4.5V
900mV @ 250µA
45 nC @ 4.5 V
±12V
2970 pF @ 10 V
-
1.7W (Ta), 12.5W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
DFN2020MD-6
6-UDFN Exposed Pad
CSDxxxxF4T
CSD17483F4
MOSFET N-CH 30V 1.5A 3PICOSTAR
Texas Instruments
100,731
In Stock
1 : ¥3.53000
Cut Tape (CT)
3,000 : ¥0.64179
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
30 V
1.5A (Ta)
1.8V, 4.5V
240mOhm @ 500mA, 8V
1.1V @ 250µA
1.3 nC @ 4.5 V
12V
190 pF @ 15 V
-
500mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
3-PICOSTAR
3-XFDFN
TO252-3
IRFR24N15DTRPBF
MOSFET N-CH 150V 24A DPAK
Infineon Technologies
1,729
In Stock
1 : ¥11.49000
Cut Tape (CT)
2,000 : ¥4.76054
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
150 V
24A (Tc)
10V
95mOhm @ 14A, 10V
5V @ 250µA
45 nC @ 10 V
±30V
890 pF @ 25 V
-
140W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
TO-252AA (DPAK)
TO-252-3, DPAK (2 Leads + Tab), SC-63
VML0806
RV1C001ZPT2L
MOSFET P-CH 20V 100MA VML0806
Rohm Semiconductor
49,336
In Stock
1 : ¥3.12000
Cut Tape (CT)
8,000 : ¥0.49296
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Not For New Designs
P-Channel
MOSFET (Metal Oxide)
20 V
100mA (Ta)
1.2V, 4.5V
3.8Ohm @ 100mA, 4.5V
1V @ 100µA
-
±10V
15 pF @ 10 V
-
100mW (Ta)
150°C (TJ)
Surface Mount
VML0806
3-SMD, No Lead
4,971
In Stock
1 : ¥6.16000
Cut Tape (CT)
5,000 : ¥2.02270
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Showing
of 6

Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.