Single FETs, MOSFETs

Results: 4
Series
-QFET®UniFET™
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)Tube
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
60 V300 V900 V
Current - Continuous Drain (Id) @ 25°C
320mA (Ta)5.4A (Tc)15.5A (Ta)59A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V5V10V
Rds On (Max) @ Id, Vgs
56mOhm @ 29.5A, 10V150mOhm @ 7.5A, 5V1.6Ohm @ 500mA, 10V2.3Ohm @ 2.7A, 10V
Vgs(th) (Max) @ Id
2V @ 250µA2.3V @ 250µA5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
0.7 nC @ 4.5 V26 nC @ 5 V40 nC @ 10 V100 nC @ 10 V
Vgs (Max)
±20V±30V
Input Capacitance (Ciss) (Max) @ Vds
24.5 pF @ 20 V1190 pF @ 25 V1550 pF @ 25 V4670 pF @ 25 V
Power Dissipation (Max)
300mW (Ta)3.13W (Ta), 158W (Tc)65W (Tc)500W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)
Mounting Type
Surface MountThrough Hole
Supplier Device Package
DPAKSOT-23-3 (TO-236)TO-263 (D2PAK)TO-3PN
Package / Case
TO-236-3, SC-59, SOT-23-3TO-252-3, DPAK (2 Leads + Tab), SC-63TO-263-3, D2PAK (2 Leads + Tab), TO-263ABTO-3P-3, SC-65-3
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
SOT 23-3
2N7002KT1G
MOSFET N-CH 60V 320MA SOT23-3
onsemi
246,810
In Stock
1 : ¥1.81000
Cut Tape (CT)
3,000 : ¥0.29869
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
320mA (Ta)
4.5V, 10V
1.6Ohm @ 500mA, 10V
2.3V @ 250µA
0.7 nC @ 4.5 V
±20V
24.5 pF @ 20 V
-
300mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3 (TO-236)
TO-236-3, SC-59, SOT-23-3
DPAK_369C
NTD20P06LT4G
MOSFET P-CH 60V 15.5A DPAK
onsemi
7,353
In Stock
1 : ¥8.87000
Cut Tape (CT)
2,500 : ¥3.65911
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
60 V
15.5A (Ta)
5V
150mOhm @ 7.5A, 5V
2V @ 250µA
26 nC @ 5 V
±20V
1190 pF @ 25 V
-
65W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
DPAK
TO-252-3, DPAK (2 Leads + Tab), SC-63
TO-3P-3,TO-247-3
FDA59N30
MOSFET N-CH 300V 59A TO3PN
onsemi
509
In Stock
1 : ¥34.15000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
300 V
59A (Tc)
10V
56mOhm @ 29.5A, 10V
5V @ 250µA
100 nC @ 10 V
±30V
4670 pF @ 25 V
-
500W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
TO-3PN
TO-3P-3, SC-65-3
TO-263
FQB5N90TM
MOSFET N-CH 900V 5.4A D2PAK
onsemi
1,201
In Stock
62,400
Factory
1 : ¥24.05000
Cut Tape (CT)
800 : ¥14.53084
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
900 V
5.4A (Tc)
10V
2.3Ohm @ 2.7A, 10V
5V @ 250µA
40 nC @ 10 V
±30V
1550 pF @ 25 V
-
3.13W (Ta), 158W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
TO-263 (D2PAK)
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.