Single FETs, MOSFETs

Results: 2
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
20 V60 V
Current - Continuous Drain (Id) @ 25°C
750mA (Ta)1.1A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
1.5V, 4.5V4.5V, 10V
Rds On (Max) @ Id, Vgs
230mOhm @ 3A, 10V350mOhm @ 890mA, 4.5V
Vgs(th) (Max) @ Id
1.2V @ 250µA2.5V @ 250µA
Vgs (Max)
±6V±20V
Input Capacitance (Ciss) (Max) @ Vds
120 pF @ 16 V240 pF @ 25 V
Power Dissipation (Max)
310mW (Ta)470mW (Ta)
Supplier Device Package
SOT-23-3 (TO-236)SOT-723
Package / Case
SOT-723TO-236-3, SC-59, SOT-23-3
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Grade
Qualification
Mounting Type
Supplier Device Package
Package / Case
SOT-723_631AA
NTK3134NT1G
MOSFET N-CH 20V 750MA SOT723
onsemi
46,421
In Stock
1 : ¥4.19000
Cut Tape (CT)
4,000 : ¥1.13548
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
20 V
750mA (Ta)
1.5V, 4.5V
350mOhm @ 890mA, 4.5V
1.2V @ 250µA
-
±6V
120 pF @ 16 V
-
310mW (Ta)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
SOT-723
SOT-723
SOT 23-3
NVR5124PLT1G
MOSFET P-CH 60V 1.1A SOT23-3
onsemi
6,881
In Stock
1 : ¥3.69000
Cut Tape (CT)
3,000 : ¥1.24997
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
60 V
1.1A (Ta)
4.5V, 10V
230mOhm @ 3A, 10V
2.5V @ 250µA
4.3 nC @ 10 V
±20V
240 pF @ 25 V
-
470mW (Ta)
-55°C ~ 150°C (TJ)
Automotive
AEC-Q101
Surface Mount
SOT-23-3 (TO-236)
TO-236-3, SC-59, SOT-23-3
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Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.