Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package	Package / Case

NTR5103NT1G MOSFET N-CH 60V 260MA SOT23-3 onsemi	100,060 In Stock	1 : ¥1.97000 Cut Tape (CT) 3,000 : ¥0.32801 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	60 V	260mA (Ta)	4.5V, 10V	2.5Ohm @ 240mA, 10V	2.6V @ 250µA	0.81 nC @ 5 V	±30V	40 pF @ 25 V	-	300mW (Ta)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	SOT-23-3 (TO-236)	TO-236-3, SC-59, SOT-23-3
NVBG020N120SC1 MOSFET N-CH 1200V 8.6A/98A D2PAK onsemi	1,203 In Stock 12,000 Factory	1 : ¥411.23000 Cut Tape (CT) 800 : ¥305.56246 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	8.6A (Ta), 98A (Tc)	20V	28mOhm @ 60A, 20V	4.3V @ 20mA	220 nC @ 20 V	+25V, -15V	2943 pF @ 800 V	-	3.7W (Ta), 468W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Surface Mount	D2PAK-7	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
T2N7002BK,LM MOSFET N-CH 60V 400MA SOT23-3 Toshiba Semiconductor and Storage	265,753 In Stock	1 : ¥1.23000 Cut Tape (CT) 3,000 : ¥0.23206 Tape & Reel (TR)	U-MOSVII-H	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	60 V	400mA (Ta)	4.5V, 10V	1.5Ohm @ 100mA, 10V	2.1V @ 250µA	0.6 nC @ 4.5 V	±20V	40 pF @ 10 V	-	320mW (Ta)	150°C (TJ)	-	-	Surface Mount	SOT-23-3	TO-236-3, SC-59, SOT-23-3
SISH101DN-T1-GE3 MOSFET P-CH 30V 16.9A/35A PPAK Vishay Siliconix	16,130 In Stock	1 : ¥4.27000 Cut Tape (CT) 3,000 : ¥2.00114 Tape & Reel (TR)	TrenchFET®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	30 V	16.9A (Ta), 35A (Tc)	4.5V, 10V	7.2mOhm @ 15A, 10V	2.5V @ 250µA	102 nC @ 10 V	±25V	3595 pF @ 15 V	-	3.7W (Ta), 52W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	PowerPAK® 1212-8SH	PowerPAK® 1212-8SH
G080P06M P-60V,-195A,RD(MAX)<7.5M@-10V,VT Goford Semiconductor	750 In Stock	1 : ¥15.52000 Cut Tape (CT) 800 : ¥8.68783 Tape & Reel (TR)	TrenchFET®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	60 V	195A (Tc)	10V	7.5mOhm @ 20A, 10V	4V @ 250µA	186 nC @ 10 V	±20V	15870 pF @ 30 V	-	294W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TO-263	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.