Single FETs, MOSFETs

Results: 5
Manufacturer
Nexperia USA Inc.onsemiVishay Siliconix
Series
-TrenchFET®TrenchFET® Gen IVTrenchMOS™
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Product Status
ActiveLast Time Buy
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
40 V60 V
Current - Continuous Drain (Id) @ 25°C
24A (Ta), 102A (Tc)47A (Tc)50A (Tc)120A (Tc)350A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V10V
Rds On (Max) @ Id, Vgs
1.12mOhm @ 15A, 10V3.3mOhm @ 25A, 10V3.3mOhm @ 50A, 10V7.5mOhm @ 10.3A, 10V15mOhm @ 17A, 10V
Vgs(th) (Max) @ Id
2.05V @ 1mA2.2V @ 250µA2.5V @ 250µA3.5V @ 60µA
Gate Charge (Qg) (Max) @ Vgs
23 nC @ 10 V57 nC @ 10 V150 nC @ 10 V155 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
1600 pF @ 25 V2500 pF @ 20 V4103 pF @ 20 V6120 pF @ 25 V8015 pF @ 25 V
FET Feature
-Schottky Diode (Body)
Power Dissipation (Max)
3.6W (Ta), 68W (Tc)68W (Tc)115W (Tc)150W (Tc)500W (Tc)
Supplier Device Package
LFPAK4 (5x6)LFPAK56, Power-SO8PowerPAK® SO-8TO-263 (D2PAK)
Package / Case
PowerPAK® SO-8SC-100, SOT-669SOT-1023, 4-LFPAKTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Grade
Qualification
Mounting Type
Supplier Device Package
Package / Case
TO-263 (D2Pak)
SQM50P06-15L_GE3
MOSFET P-CHANNEL 60V 50A TO263
Vishay Siliconix
1,117
In Stock
1 : ¥20.61000
Cut Tape (CT)
800 : ¥11.52266
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Last Time Buy
P-Channel
MOSFET (Metal Oxide)
60 V
50A (Tc)
4.5V, 10V
15mOhm @ 17A, 10V
2.5V @ 250µA
155 nC @ 10 V
±20V
6120 pF @ 25 V
-
150W (Tc)
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Surface Mount
TO-263 (D2PAK)
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
LFPAK56/POWER-SO8/SOT669
PSMN3R2-40YLDX
MOSFET N-CH 40V 120A LFPAK56
Nexperia USA Inc.
2,970
In Stock
1 : ¥11.66000
Cut Tape (CT)
1,500 : ¥5.10628
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
40 V
120A (Tc)
4.5V, 10V
3.3mOhm @ 25A, 10V
2.05V @ 1mA
57 nC @ 10 V
±20V
4103 pF @ 20 V
Schottky Diode (Body)
115W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
LFPAK56, Power-SO8
SC-100, SOT-669
PowerPAK_SO-8L
SQJ136ELP-T1_GE3
MOSFET N-CH 40V 350A PPAK SO-8
Vishay Siliconix
2,984
In Stock
1 : ¥19.87000
Cut Tape (CT)
3,000 : ¥5.71547
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
40 V
350A (Tc)
-
1.12mOhm @ 15A, 10V
2.2V @ 250µA
150 nC @ 10 V
±20V
8015 pF @ 25 V
-
500W (Tc)
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Surface Mount
PowerPAK® SO-8
PowerPAK® SO-8
PowerPak SO-8L
SQJ848EP-T1_GE3
MOSFET N-CH 40V 47A PPAK SO-8
Vishay Siliconix
2,704
In Stock
1 : ¥13.05000
Cut Tape (CT)
3,000 : ¥5.89568
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
40 V
47A (Tc)
4.5V, 10V
7.5mOhm @ 10.3A, 10V
2.5V @ 250µA
23 nC @ 10 V
±20V
2500 pF @ 20 V
-
68W (Tc)
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Surface Mount
PowerPAK® SO-8
PowerPAK® SO-8
SOT 1023
NVMYS3D5N04CTWG
MOSFET N-CH 40V 24A/102A LFPAK4
onsemi
2,954
In Stock
1 : ¥10.59000
Cut Tape (CT)
3,000 : ¥4.38702
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
40 V
24A (Ta), 102A (Tc)
10V
3.3mOhm @ 50A, 10V
3.5V @ 60µA
23 nC @ 10 V
±20V
1600 pF @ 25 V
-
3.6W (Ta), 68W (Tc)
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Surface Mount
LFPAK4 (5x6)
SOT-1023, 4-LFPAK
Showing
of 5

Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.