Single FETs, MOSFETs

Results: 4
Manufacturer
Infineon TechnologiesMicrochip TechnologyWolfspeed, Inc.
Series
-C3M™CoolMOS™ C7CoolMOS™ P7
Technology
MOSFET (Metal Oxide)SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
650 V1200 V1700 V
Current - Continuous Drain (Id) @ 25°C
7A (Tc)61A (Tc)75A (Tc)100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V15V20V
Rds On (Max) @ Id, Vgs
19mOhm @ 58.3A, 10V28.8mOhm @ 50A, 15V45mOhm @ 22.5A, 10V940mOhm @ 2.5A, 20V
Vgs(th) (Max) @ Id
3.25V @ 100µA (Typ)3.6V @ 17.7mA4V @ 1.08mA4V @ 2.92mA
Gate Charge (Qg) (Max) @ Vgs
11 nC @ 20 V90 nC @ 10 V162 nC @ 15 V215 nC @ 10 V
Vgs (Max)
+15V, -4V±20V+23V, -10V
Input Capacitance (Ciss) (Max) @ Vds
184 pF @ 1360 V3891 pF @ 400 V4818 pF @ 1000 V9900 pF @ 400 V
Power Dissipation (Max)
68W (Tc)201W (Tc)446W (Tc)469W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)-40°C ~ 175°C (TJ)
Supplier Device Package
PG-TO247-3PG-TO247-3-41TO-247-3TO-247-4L
Package / Case
TO-247-3TO-247-4
Stocking Options
Environmental Options
Media
Marketplace Product
4Results
Showing
of 4
Compare
Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
TO-247-3 AC EP
IPW60R045P7XKSA1
MOSFET N-CH 650V 61A TO247-3-41
Infineon Technologies
1,934
In Stock
1 : ¥55.66000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
650 V
61A (Tc)
10V
45mOhm @ 22.5A, 10V
4V @ 1.08mA
90 nC @ 10 V
±20V
3891 pF @ 400 V
-
201W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
PG-TO247-3-41
TO-247-3
AUIRFP4310Z BACK
IPW65R019C7FKSA1
MOSFET N-CH 650V 75A TO247-3
Infineon Technologies
615
In Stock
1 : ¥169.53000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
650 V
75A (Tc)
10V
19mOhm @ 58.3A, 10V
4V @ 2.92mA
215 nC @ 10 V
±20V
9900 pF @ 400 V
-
446W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
PG-TO247-3
TO-247-3
C3M0065100K
C3M0021120K
SICFET N-CH 1200V 100A TO247-4L
Wolfspeed, Inc.
1,337
In Stock
1 : ¥336.75000
Tube
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
100A (Tc)
15V
28.8mOhm @ 50A, 15V
3.6V @ 17.7mA
162 nC @ 15 V
+15V, -4V
4818 pF @ 1000 V
-
469W (Tc)
-40°C ~ 175°C (TJ)
Through Hole
TO-247-4L
TO-247-4
TO-247-3
MSC750SMA170B
SICFET N-CH 1700V 7A TO247-3
Microchip Technology
0
In Stock
Check Lead Time
1 : ¥44.66000
Tube
-
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1700 V
7A (Tc)
20V
940mOhm @ 2.5A, 20V
3.25V @ 100µA (Typ)
11 nC @ 20 V
+23V, -10V
184 pF @ 1360 V
-
68W (Tc)
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247-3
Showing
of 4

Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.