Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case

RV3C002UNT2CL MOSFET N-CH 20V 150MA VML0604 Rohm Semiconductor	137,250 In Stock	1 : ¥2.79000 Cut Tape (CT) 8,000 : ¥0.84151 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	20 V	150mA (Ta)	1.5V, 4.5V	2Ohm @ 150mA, 4.5V	1V @ 100µA	-	±10V	12 pF @ 10 V	-	100mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	VML0604	3-XFDFN
SI2333DS-T1-E3 MOSFET P-CH 12V 4.1A SOT23-3 Vishay Siliconix	49,930 In Stock	1 : ¥6.81000 Cut Tape (CT) 3,000 : ¥2.58532 Tape & Reel (TR)	TrenchFET®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	12 V	4.1A (Ta)	1.8V, 4.5V	32mOhm @ 5.3A, 4.5V	1V @ 250µA	18 nC @ 4.5 V	±8V	1100 pF @ 6 V	-	750mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-3 (TO-236)	TO-236-3, SC-59, SOT-23-3
SIRA18BDP-T1-GE3 MOSFET N-CH 30V 19A/40A PPAK SO8 Vishay Siliconix	15,074 In Stock	1 : ¥3.86000 Cut Tape (CT) 3,000 : ¥1.30500 Tape & Reel (TR)	TrenchFET® Gen IV	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	30 V	19A (Ta), 40A (Tc)	4.5V, 10V	6.83mOhm @ 10A, 10V	2.4V @ 250µA	19 nC @ 10 V	+20V, -16V	680 pF @ 15 V	-	3.8W (Ta), 17W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK® SO-8	PowerPAK® SO-8

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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.