Single FETs, MOSFETs

Results: 10
Manufacturer
Alpha & Omega Semiconductor Inc.Infineon TechnologiesLittelfuse Inc.STMicroelectronicsVishay SiliconixWolfspeed, Inc.
Series
aMOS5™C2M™CoolMOS™EHiPerFET™, Ultra X2MDmesh™ K5TrenchFET®Z-FET™
Packaging
BulkCut Tape (CT)Digi-Reel®Tape & Reel (TR)Tube
Product Status
ActiveNot For New Designs
FET Type
N-ChannelP-Channel
Technology
MOSFET (Metal Oxide)SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
60 V600 V650 V800 V1200 V
Current - Continuous Drain (Id) @ 25°C
11A (Tc)13A (Tc)14A (Tc)16A (Tc)20.2A (Tc)36A (Tc)60A (Tc)77.5A (Tc)100A (Tc)120A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V10V20V
Rds On (Max) @ Id, Vgs
6.7mOhm @ 30A, 10V30mOhm @ 50A, 10V41mOhm @ 44.4A, 10V52mOhm @ 40A, 20V98mOhm @ 20A, 20V190mOhm @ 9.5A, 10V199mOhm @ 9.9A, 10V340mOhm @ 7A, 10V350mOhm @ 7.5A, 10V380mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id
2.5V @ 250µA2.8V @ 10mA3.5V @ 2.96mA3.5V @ 630µA3.5V @ 660µA3.8V @ 250µA4V @ 250µA4V @ 5mA5V @ 250µA5.5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs
20 nC @ 10 V26 nC @ 10 V43 nC @ 10 V53 nC @ 10 V62 nC @ 5 V63 nC @ 10 V115 nC @ 20 V180 nC @ 10 V270 nC @ 10 V290 nC @ 10 V
Vgs (Max)
±20V+25V, -10V±30V
Input Capacitance (Ciss) (Max) @ Vds
866 pF @ 100 V950 pF @ 1000 V955 pF @ 100 V1093 pF @ 100 V1400 pF @ 100 V1520 pF @ 100 V1893 pF @ 1000 V6530 pF @ 10 V11300 pF @ 25 V14280 pF @ 25 V
Power Dissipation (Max)
131W (Tc)139W (Tc)151W (Tc)156W (Tc)170W (Tc)192W (Tc)330W (Tc)375W (Tc)481W (Tc)1040W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)
Mounting Type
Surface MountThrough Hole
Supplier Device Package
PG-TO220-3PG-TO247-3-1PLUS247™-3TO-247-3TO-263 (D2PAK)
Package / Case
TO-220-3TO-247-3TO-247-3 VariantTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Stocking Options
Environmental Options
Media
Marketplace Product
10Results
Showing
of 10
Compare
Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
TO-263 (D2Pak)
SQM120P06-07L_GE3
MOSFET P-CH 60V 120A TO263
Vishay Siliconix
4,796
In Stock
1 : ¥28.73000
Cut Tape (CT)
800 : ¥17.33736
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
60 V
120A (Tc)
4.5V, 10V
6.7mOhm @ 30A, 10V
2.5V @ 250µA
270 nC @ 10 V
±20V
14280 pF @ 25 V
-
375W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
TO-263 (D2PAK)
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
C2D10120D
C2M0080120D
SICFET N-CH 1200V 36A TO247-3
Wolfspeed, Inc.
1,554
In Stock
1 : ¥240.05000
Bulk
Bulk
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
36A (Tc)
20V
98mOhm @ 20A, 20V
4V @ 5mA
62 nC @ 5 V
+25V, -10V
950 pF @ 1000 V
-
192W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247-3
C2D10120D
C2M0040120D
SICFET N-CH 1200V 60A TO247-3
Wolfspeed, Inc.
1,093
In Stock
1 : ¥420.18000
Tube
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
60A (Tc)
20V
52mOhm @ 40A, 20V
2.8V @ 10mA
115 nC @ 20 V
+25V, -10V
1893 pF @ 1000 V
-
330W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247-3
TO-220-3
IPP60R190C6XKSA1
MOSFET N-CH 600V 20.2A TO220-3
Infineon Technologies
3,887
In Stock
1 : ¥18.72000
Tube
Tube
Not For New Designs
N-Channel
MOSFET (Metal Oxide)
600 V
20.2A (Tc)
10V
190mOhm @ 9.5A, 10V
3.5V @ 630µA
63 nC @ 10 V
±20V
1400 pF @ 100 V
-
151W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
PG-TO220-3
TO-220-3
1,309
In Stock
1 : ¥16.42000
Cut Tape (CT)
800 : ¥6.89624
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
600 V
11A (Tc)
10V
380mOhm @ 5.5A, 10V
3.8V @ 250µA
20 nC @ 10 V
±20V
955 pF @ 100 V
-
131W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
TO-263 (D2PAK)
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
TO-263AB
SIHB15N80AE-GE3
MOSFET N-CH 800V 13A D2PAK
Vishay Siliconix
246
In Stock
1 : ¥21.51000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
800 V
13A (Tc)
10V
350mOhm @ 7.5A, 10V
4V @ 250µA
53 nC @ 10 V
±30V
1093 pF @ 100 V
-
156W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
TO-263 (D2PAK)
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
TO-220-3
IPP60R199CPXKSA1
MOSFET N-CH 650V 16A TO220-3
Infineon Technologies
407
In Stock
1 : ¥32.76000
Tube
Tube
Not For New Designs
N-Channel
MOSFET (Metal Oxide)
650 V
16A (Tc)
10V
199mOhm @ 9.9A, 10V
3.5V @ 660µA
43 nC @ 10 V
±20V
1520 pF @ 100 V
-
139W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
PG-TO220-3
TO-220-3
D2Pak
STB17N80K5
MOSFET N-CHANNEL 800V 14A D2PAK
STMicroelectronics
481
In Stock
1 : ¥36.37000
Cut Tape (CT)
1,000 : ¥18.23381
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
800 V
14A (Tc)
10V
340mOhm @ 7A, 10V
5V @ 250µA
26 nC @ 10 V
±30V
866 pF @ 100 V
-
170W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
TO-263 (D2PAK)
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
TO-247 Plus X
IXFX100N65X2
MOSFET N-CH 650V 100A PLUS247-3
Littelfuse Inc.
702
In Stock
990
Factory
1 : ¥152.95000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
650 V
100A (Tc)
10V
30mOhm @ 50A, 10V
5.5V @ 4mA
180 nC @ 10 V
±30V
11300 pF @ 25 V
-
1040W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
PLUS247™-3
TO-247-3 Variant
PG-TO247-3
IPW60R041C6FKSA1
MOSFET N-CH 600V 77.5A TO247-3
Infineon Technologies
25
In Stock
1 : ¥121.83000
Tube
Tube
Not For New Designs
N-Channel
MOSFET (Metal Oxide)
600 V
77.5A (Tc)
10V
41mOhm @ 44.4A, 10V
3.5V @ 2.96mA
290 nC @ 10 V
±20V
6530 pF @ 10 V
-
481W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
PG-TO247-3-1
TO-247-3
Showing
of 10

Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.