Single FETs, MOSFETs

Results: 3
Manufacturer
Infineon TechnologiesToshiba Semiconductor and Storage
Series
HEXFET®OptiMOS™U-MOSVIII-H
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
30 V60 V100 V
Current - Continuous Drain (Id) @ 25°C
3.6A (Ta)6A (Ta)8A (Ta), 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4V, 10V4.5V, 10V6V, 10V
Rds On (Max) @ Id, Vgs
9.7mOhm @ 20A, 10V36mOhm @ 5A, 10V64mOhm @ 3.6A, 10V
Vgs(th) (Max) @ Id
2.4V @ 10µA2.5V @ 100µA3.8V @ 36µA
Gate Charge (Qg) (Max) @ Vgs
4.8 nC @ 4.5 V9.3 nC @ 10 V28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
388 pF @ 25 V550 pF @ 10 V2080 pF @ 50 V
Power Dissipation (Max)
1.2W (Ta)1.3W (Ta)2.1W (Ta), 69W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)
Supplier Device Package
Micro3™/SOT-23PG-TSDSON-8-FLSOT-23F
Package / Case
8-PowerTDFNSOT-23-3 Flat LeadsTO-236-3, SC-59, SOT-23-3
Stocking Options
Environmental Options
Media
Marketplace Product
3Results
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
32,148
In Stock
1 : ¥3.45000
Cut Tape (CT)
3,000 : ¥1.15112
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
6A (Ta)
4V, 10V
36mOhm @ 5A, 10V
2.5V @ 100µA
9.3 nC @ 10 V
±20V
550 pF @ 10 V
-
1.2W (Ta)
-55°C ~ 175°C (TJ)
Surface Mount
SOT-23F
SOT-23-3 Flat Leads
TSDSON-8
BSZ097N10NS5ATMA1
MOSFET N-CH 100V 8A/40A TSDSON
Infineon Technologies
12,371
In Stock
1 : ¥12.89000
Cut Tape (CT)
5,000 : ¥5.07067
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
100 V
8A (Ta), 40A (Tc)
6V, 10V
9.7mOhm @ 20A, 10V
3.8V @ 36µA
28 nC @ 10 V
±20V
2080 pF @ 50 V
-
2.1W (Ta), 69W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
PG-TSDSON-8-FL
8-PowerTDFN
SOT-23-3
IRLML9301TRPBF
MOSFET P-CH 30V 3.6A SOT23
Infineon Technologies
90,145
In Stock
1 : ¥3.45000
Cut Tape (CT)
3,000 : ¥0.93953
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
30 V
3.6A (Ta)
4.5V, 10V
64mOhm @ 3.6A, 10V
2.4V @ 10µA
4.8 nC @ 4.5 V
±20V
388 pF @ 25 V
-
1.3W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
Micro3™/SOT-23
TO-236-3, SC-59, SOT-23-3
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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.