Single FETs, MOSFETs

Results: 4
Manufacturer
Infineon TechnologiesSTMicroelectronicsVishay Siliconix
Series
HEXFET®MDmesh™ M6TrenchFET®
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)Tube
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
20 V40 V55 V600 V
Current - Continuous Drain (Id) @ 25°C
10.5A (Ta)18A (Tc)30A (Tc)110A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
1.8V, 4.5V4.5V, 10V10V
Rds On (Max) @ Id, Vgs
7.8mOhm @ 16.4A, 10V8mOhm @ 62A, 10V9mOhm @ 15A, 4.5V99mOhm @ 15A, 10V
Vgs(th) (Max) @ Id
1V @ 250µA2.5V @ 250µA4V @ 250µA4.75V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
23 nC @ 4.5 V44.3 nC @ 10 V146 nC @ 10 V168 nC @ 8 V
Vgs (Max)
±8V±20V±25V
Input Capacitance (Ciss) (Max) @ Vds
1960 pF @ 100 V3247 pF @ 25 V5875 pF @ 10 V
Power Dissipation (Max)
1.5W (Ta)3.7W (Ta), 39.1W (Tc)200W (Tc)208W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)
Mounting Type
Surface MountThrough Hole
Supplier Device Package
D2PAKPowerPAK® 1212-8TO-220
Package / Case
PowerPAK® 1212-8TO-220-3TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Stocking Options
Environmental Options
Media
Marketplace Product
4Results
Showing
of 4
Compare
Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
PowerPAK 1212-8
SIS407ADN-T1-GE3
MOSFET P-CH 20V 18A PPAK1212-8
Vishay Siliconix
20,853
In Stock
1 : ¥6.98000
Cut Tape (CT)
3,000 : ¥2.66449
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
20 V
18A (Tc)
1.8V, 4.5V
9mOhm @ 15A, 4.5V
1V @ 250µA
168 nC @ 8 V
±8V
5875 pF @ 10 V
-
3.7W (Ta), 39.1W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK® 1212-8
PowerPAK® 1212-8
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IRF3205STRLPBF
MOSFET N-CH 55V 110A D2PAK
Infineon Technologies
3,546
In Stock
1 : ¥14.20000
Cut Tape (CT)
800 : ¥7.94628
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
55 V
110A (Tc)
10V
8mOhm @ 62A, 10V
4V @ 250µA
146 nC @ 10 V
±20V
3247 pF @ 25 V
-
200W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
D2PAK
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
PowerPAK 1212-8
SI7116DN-T1-E3
MOSFET N-CH 40V 10.5A PPAK1212-8
Vishay Siliconix
7,899
In Stock
1 : ¥17.65000
Cut Tape (CT)
3,000 : ¥7.94033
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
40 V
10.5A (Ta)
4.5V, 10V
7.8mOhm @ 16.4A, 10V
2.5V @ 250µA
23 nC @ 4.5 V
±20V
-
-
1.5W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK® 1212-8
PowerPAK® 1212-8
TO-220-3 Type A
STP36N60M6
MOSFET N-CHANNEL 600V 30A TO220
STMicroelectronics
88
In Stock
1 : ¥53.04000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
600 V
30A (Tc)
10V
99mOhm @ 15A, 10V
4.75V @ 250µA
44.3 nC @ 10 V
±25V
1960 pF @ 100 V
-
208W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
TO-220
TO-220-3
Showing
of 4

Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.