Single FETs, MOSFETs

Results: 6
Manufacturer
Diodes IncorporatedRohm SemiconductorYAGEO XSEMI
Series
-XP2N1K2E
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Drain to Source Voltage (Vdss)
12 V20 V30 V50 V
Current - Continuous Drain (Id) @ 25°C
100mA (Ta)200mA (Ta)9.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
0.9V, 4.5V1.2V, 2.5V1.2V, 4.5V2.5V, 4V
Rds On (Max) @ Id, Vgs
10mOhm @ 9.7A, 4.5V1.2Ohm @ 200mA, 2.5V2.2Ohm @ 200mA, 4.5V3.5Ohm @ 100mA, 4.5V8Ohm @ 10mA, 4V
Vgs(th) (Max) @ Id
800mV @ 1mA800mV @ 250µA1V @ 100µA1V @ 1mA1.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs
0.7 nC @ 2.5 V50.6 nC @ 8 V
Vgs (Max)
±8V±12V±20V
Input Capacitance (Ciss) (Max) @ Vds
7.1 pF @ 10 V13 pF @ 5 V25 pF @ 10 V26 pF @ 10 V44 pF @ 10 V2426 pF @ 10 V
Power Dissipation (Max)
150mW (Ta)200mW (Ta)680mW (Ta)
Operating Temperature
-55°C ~ 150°C (TJ)150°C (TJ)
Supplier Device Package
SC-59-3SOT-723UMT3UMT3FVMT3
Package / Case
SC-70, SOT-323SC-85SOT-723TO-236-3, SC-59, SOT-23-3
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
UMT3F
RU1J002YNTCL
MOSFET N-CH 50V 200MA UMT3F
Rohm Semiconductor
630,855
In Stock
1 : ¥2.05000
Cut Tape (CT)
3,000 : ¥0.34818
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
50 V
200mA (Ta)
0.9V, 4.5V
2.2Ohm @ 200mA, 4.5V
800mV @ 1mA
-
±8V
26 pF @ 10 V
-
150mW (Ta)
150°C (TJ)
Surface Mount
UMT3F
SC-85
VMT3 Pkg
RUM002N02T2L
MOSFET N-CH 20V 200MA VMT3
Rohm Semiconductor
608,172
In Stock
1 : ¥2.96000
Cut Tape (CT)
8,000 : ¥0.50622
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
20 V
200mA (Ta)
1.2V, 2.5V
1.2Ohm @ 200mA, 2.5V
1V @ 1mA
-
±8V
25 pF @ 10 V
-
150mW (Ta)
150°C (TJ)
Surface Mount
VMT3
SOT-723
UMT3F
RU1C001UNTCL
MOSFET N-CH 20V 100MA UMT3F
Rohm Semiconductor
30,628
In Stock
This product has a maximum purchase limit
1 : ¥3.12000
Cut Tape (CT)
3,000 : ¥0.53142
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
20 V
100mA (Ta)
1.2V, 4.5V
3.5Ohm @ 100mA, 4.5V
1V @ 100µA
-
±12V
7.1 pF @ 10 V
-
150mW (Ta)
150°C (TJ)
Surface Mount
UMT3F
SC-85
SC-59-3
DMN1019USN-13
MOSFET N-CH 12V 9.3A SC59
Diodes Incorporated
12,776
In Stock
70,000
Factory
1 : ¥3.61000
Cut Tape (CT)
10,000 : ¥0.83526
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
12 V
9.3A (Ta)
1.2V, 2.5V
10mOhm @ 9.7A, 4.5V
800mV @ 250µA
50.6 nC @ 8 V
±8V
2426 pF @ 10 V
-
680mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SC-59-3
TO-236-3, SC-59, SOT-23-3
XP2N1K2EN1
XP2N1K2EN1
MOSFET N-CH 20V 200MA SOT723
YAGEO XSEMI
998
In Stock
1 : ¥4.10000
Cut Tape (CT)
10,000 : ¥0.94702
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
20 V
200mA (Ta)
1.2V, 2.5V
1.2Ohm @ 200mA, 2.5V
1V @ 1mA
0.7 nC @ 2.5 V
±8V
44 pF @ 10 V
-
150mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-723
SOT-723
UMT3
2SK3018T106
MOSFET N-CH 30V 100MA UMT3
Rohm Semiconductor
0
In Stock
Active
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
30 V
100mA (Ta)
2.5V, 4V
8Ohm @ 10mA, 4V
1.5V @ 100µA
-
±20V
13 pF @ 5 V
-
200mW (Ta)
150°C (TJ)
Surface Mount
UMT3
SC-70, SOT-323
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Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.