Single FETs, MOSFETs

Results: 6
Manufacturer
Infineon TechnologiesNexperia USA Inc.STMicroelectronicsVishay Siliconix
Series
-HEXFET®HEXFET®, StrongIRFET™MESH OVERLAY™ IITrenchMOS™
Product Status
ActiveObsolete
Drain to Source Voltage (Vdss)
100 V200 V
Current - Continuous Drain (Id) @ 25°C
9A (Tc)12A (Tc)18A (Tc)20A (Tc)36A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4V, 10V10V
Rds On (Max) @ Id, Vgs
44mOhm @ 18A, 10V100mOhm @ 11A, 10V130mOhm @ 10A, 10V170mOhm @ 7.2A, 10V180mOhm @ 11A, 10V400mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id
2V @ 250µA4V @ 1mA4V @ 250µA4.9V @ 100µA4.9V @ 50µA
Gate Charge (Qg) (Max) @ Vgs
23 nC @ 10 V29 nC @ 10 V45 nC @ 10 V65 nC @ 10 V70 nC @ 10 V74 nC @ 5 V
Vgs (Max)
±16V±20V
Input Capacitance (Ciss) (Max) @ Vds
700 pF @ 25 V790 pF @ 50 V1200 pF @ 50 V1300 pF @ 25 V1800 pF @ 25 V2470 pF @ 25 V
Power Dissipation (Max)
75W (Tc)80W (Tc)100W (Tc)125W (Tc)140W (Tc)150W (Tc)
Operating Temperature
-65°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)
Supplier Device Package
TO-220TO-220AB
Stocking Options
Environmental Options
Media
Marketplace Product
6Results
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
TO-220AB PKG
IRL540NPBF
MOSFET N-CH 100V 36A TO220AB
Infineon Technologies
14,462
In Stock
1 : ¥11.25000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
100 V
36A (Tc)
4V, 10V
44mOhm @ 18A, 10V
2V @ 250µA
74 nC @ 5 V
±16V
1800 pF @ 25 V
-
140W (Tc)
-55°C ~ 175°C (TJ)
Through Hole
TO-220AB
TO-220-3
TO-220AB PKG
IRFB4020PBF
MOSFET N-CH 200V 18A TO220AB
Infineon Technologies
16,954
In Stock
1 : ¥10.67000
Tube
-
Tube
Active
N-Channel
MOSFET (Metal Oxide)
200 V
18A (Tc)
10V
100mOhm @ 11A, 10V
4.9V @ 100µA
29 nC @ 10 V
±20V
1200 pF @ 50 V
-
100W (Tc)
-55°C ~ 175°C (TJ)
Through Hole
TO-220AB
TO-220-3
TO-220AB PKG
IRF200B211
MOSFET N-CH 200V 12A TO220AB
Infineon Technologies
4,599
In Stock
1 : ¥12.15000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
200 V
12A (Tc)
10V
170mOhm @ 7.2A, 10V
4.9V @ 50µA
23 nC @ 10 V
±20V
790 pF @ 50 V
-
80W (Tc)
-55°C ~ 175°C (TJ)
Through Hole
TO-220AB
TO-220-3
TO-220-3
IRF630
MOSFET N-CH 200V 9A TO220AB
STMicroelectronics
13,219
In Stock
1 : ¥12.56000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
200 V
9A (Tc)
10V
400mOhm @ 4.5A, 10V
4V @ 250µA
45 nC @ 10 V
±20V
700 pF @ 25 V
-
75W (Tc)
-65°C ~ 150°C (TJ)
Through Hole
TO-220
TO-220-3
TO-220AB
IRF640PBF-BE3
MOSFET N-CH 200V 18A TO220AB
Vishay Siliconix
152
In Stock
1 : ¥15.68000
Tube
-
Tube
Active
N-Channel
MOSFET (Metal Oxide)
200 V
18A (Tc)
10V
180mOhm @ 11A, 10V
4V @ 250µA
70 nC @ 10 V
±20V
1300 pF @ 25 V
-
125W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
TO-220AB
TO-220-3
TO-220AB
PHP20NQ20T,127
MOSFET N-CH 200V 20A TO220AB
Nexperia USA Inc.
1,934
In Stock
1 : ¥20.85000
Tube
Tube
Obsolete
N-Channel
MOSFET (Metal Oxide)
200 V
20A (Tc)
10V
130mOhm @ 10A, 10V
4V @ 1mA
65 nC @ 10 V
±20V
2470 pF @ 25 V
-
150W (Tc)
-55°C ~ 175°C (TJ)
Through Hole
TO-220AB
TO-220-3
Showing
of 6

Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.