Single FETs, MOSFETs

Results: 17
Manufacturer
EPCInfineon TechnologiesNexperia USA Inc.Rohm SemiconductorTransphorm
Series
-CoolGaN™CoolMOS™ P7eGaN®
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)Tube
Technology
GaNFET (Cascode Gallium Nitride FET)GaNFET (Gallium Nitride)MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
40 V100 V600 V650 V800 V
Current - Continuous Drain (Id) @ 25°C
1.5A (Tc)8A (Tc)8.2A (Tc)10A (Tc)10.4A (Tc)11A (Tc)11.5A (Tc)13A (Tc)15A (Tc)17A (Tc)20A (Tc)29A (Ta)31A (Tc)47.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
5V5V, 5.5V6V10V-
Rds On (Max) @ Id, Vgs
3.2mOhm @ 25A, 5V3.6mOhm @ 15A, 5V41mOhm @ 32A, 10V98mOhm @ 1.9A, 5.5V140mOhm @ 5A, 6V180mOhm @ 8.5A, 10V190mOhm @ 3.9A, 6V195mOhm @ 1.9A, 5.5V600mOhm @ 3.4A, 10V4.5Ohm @ 400mA, 10V-
Vgs(th) (Max) @ Id
1.6V @ 2.6mA1.6V @ 530µA1.6V @ 690µA1.6V @ 960µA2.4V @ 18mA2.5V @ 12.2mA2.5V @ 17.2mA2.5V @ 7mA2.5V @ 9mA3.5V @ 170µA3.5V @ 20µA4.5V @ 1mA4.8V @ 500µA
Gate Charge (Qg) (Max) @ Vgs
2.7 nC @ 6 V2.8 nC @ 6 V3.5 nC @ 6 V4 nC @ 10 V5.2 nC @ 6 V8 nC @ 10 V8.5 nC @ 5 V12 nC @ 5 V20 nC @ 10 V22 nC @ 10 V
Vgs (Max)
-10V+6V, -10V+6V, -4V+7V, -1.4V±20V
Input Capacitance (Ciss) (Max) @ Vds
80 pF @ 500 V87.7 pF @ 400 V96 pF @ 400 V110 pF @ 400 V112 pF @ 400 V125 pF @ 400 V157 pF @ 400 V200 pF @ 400 V380 pF @ 400 V570 pF @ 500 V598 pF @ 400 V1000 pF @ 50 V1111 pF @ 20 V1500 pF @ 400 V
Power Dissipation (Max)
6W (Tc)7.4W (Tc)41.6W (Tc)52W (Tc)56W (Tc)62.5W (Tc)113W (Tc)114W (Tc)125W (Tc)187W (Tc)394W-
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)-40°C ~ 150°C (TJ)150°C (TJ)
Mounting Type
Surface MountSurface Mount, Wettable FlankThrough Hole
Supplier Device Package
3-PQFN (8x8)8-WLCSP (3.5x2.13)DFN5060-5DFN8080-8DFN8080AKDFN8080KDiePG-HSOF-8-3PG-LSON-8-1PG-SOT223PG-TSON-8-7TO-247-3
Package / Case
3-PowerTDFN8-LDFN Exposed Pad8-PowerDFN8-PowerSFN8-PowerTDFN8-PowerVDFN8-VDFN Exposed Pad8-XFBGA, WLCSPDieTO-247-3TO-261-4, TO-261AA
Stocking Options
Environmental Options
Media
Marketplace Product
17Results

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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Grade
Qualification
Mounting Type
Supplier Device Package
Package / Case
2,795
In Stock
1 : ¥94.74000
Cut Tape (CT)
2,000 : ¥55.82667
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
GaNFET (Gallium Nitride)
600 V
31A (Tc)
-
-
1.6V @ 2.6mA
-
-10V
380 pF @ 400 V
-
125W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
PG-HSOF-8-3
8-PowerSFN
PG-SOT223
IPN80R4K5P7ATMA1
MOSFET N-CH 800V 1.5A SOT223
Infineon Technologies
9,807
In Stock
1 : ¥5.42000
Cut Tape (CT)
3,000 : ¥2.07371
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
800 V
1.5A (Tc)
10V
4.5Ohm @ 400mA, 10V
3.5V @ 20µA
4 nC @ 10 V
±20V
80 pF @ 500 V
-
6W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
PG-SOT223
TO-261-4, TO-261AA
PG-SOT223
IPN80R600P7ATMA1
MOSFET N-CH 800V 8A SOT223
Infineon Technologies
2,884
In Stock
1 : ¥13.30000
Cut Tape (CT)
3,000 : ¥5.50530
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
800 V
8A (Tc)
10V
600mOhm @ 3.4A, 10V
3.5V @ 170µA
20 nC @ 10 V
±20V
570 pF @ 500 V
-
7.4W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
PG-SOT223
TO-261-4, TO-261AA
GAN140-650FBEZ
GAN190-650FBEZ
650 V, 190 MOHM GALLIUM NITRIDE
Nexperia USA Inc.
1,908
In Stock
1 : ¥34.15000
Cut Tape (CT)
2,500 : ¥10.98061
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
GaNFET (Gallium Nitride)
650 V
11.5A (Tc)
6V
190mOhm @ 3.9A, 6V
2.5V @ 12.2mA
2.8 nC @ 6 V
+7V, -1.4V
96 pF @ 400 V
-
125W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount, Wettable Flank
DFN5060-5
8-PowerVDFN
GAN080-650EBEZ
GAN190-650EBEZ
650 V, 190 MOHM GALLIUM NITRIDE
Nexperia USA Inc.
2,234
In Stock
1 : ¥37.93000
Cut Tape (CT)
2,500 : ¥11.69897
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
GaNFET (Gallium Nitride)
650 V
11.5A (Tc)
6V
190mOhm @ 3.9A, 6V
2.5V @ 12.2mA
2.8 nC @ 6 V
+7V, -1.4V
96 pF @ 400 V
-
125W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount, Wettable Flank
DFN8080-8
8-VDFN Exposed Pad
GAN3R2-100CBEAZ
GAN3R2-100CBEAZ
100 V, 3.2 MOHM GALLIUM NITRIDE
Nexperia USA Inc.
811
In Stock
1 : ¥39.82000
Cut Tape (CT)
1,500 : ¥14.65992
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
GaNFET (Gallium Nitride)
100 V
60A
5V
3.2mOhm @ 25A, 5V
2.5V @ 9mA
12 nC @ 5 V
+6V, -4V
1000 pF @ 50 V
-
394W
-40°C ~ 150°C (TJ)
-
-
Surface Mount
8-WLCSP (3.5x2.13)
8-XFBGA, WLCSP
GNP1150TCA-ZE2
GNP1150TCA-ZE2
ECOGAN, 650V 11A DFN8080AK, E-MO
Rohm Semiconductor
2,873
In Stock
1 : ¥41.95000
Cut Tape (CT)
3,500 : ¥20.41973
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
GaNFET (Gallium Nitride)
650 V
11A (Tc)
5V, 5.5V
195mOhm @ 1.9A, 5.5V
2.4V @ 18mA
2.7 nC @ 6 V
+6V, -10V
112 pF @ 400 V
-
62.5W (Tc)
150°C (TJ)
-
-
Surface Mount
DFN8080AK
8-PowerDFN
GAN140-650FBEZ
GAN140-650FBEZ
650 V, 140 MOHM GALLIUM NITRIDE
Nexperia USA Inc.
2,366
In Stock
1 : ¥47.86000
Cut Tape (CT)
2,500 : ¥17.13797
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
GaNFET (Gallium Nitride)
650 V
17A (Tc)
6V
140mOhm @ 5A, 6V
2.5V @ 17.2mA
3.5 nC @ 6 V
+7V, -1.4V
125 pF @ 400 V
-
113W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount, Wettable Flank
DFN5060-5
8-PowerVDFN
2,224
In Stock
1 : ¥52.05000
Cut Tape (CT)
3,000 : ¥25.35084
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
GaNFET (Gallium Nitride)
600 V
10A (Tc)
-
-
1.6V @ 960µA
-
-10V
157 pF @ 400 V
-
62.5W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
PG-LSON-8-1
8-LDFN Exposed Pad
GNP1070TC-ZE2
GNP1070TC-ZE2
ECOGAN, 650V 20A DFN8080K, E-MOD
Rohm Semiconductor
3,063
In Stock
1 : ¥77.83000
Cut Tape (CT)
3,500 : ¥38.35921
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
GaNFET (Gallium Nitride)
650 V
20A (Tc)
5V, 5.5V
98mOhm @ 1.9A, 5.5V
2.4V @ 18mA
5.2 nC @ 6 V
+6V, -10V
200 pF @ 400 V
-
56W (Tc)
150°C (TJ)
-
-
Surface Mount
DFN8080K
8-PowerDFN
1,479
In Stock
1 : ¥93.02000
Cut Tape (CT)
3,000 : ¥54.80045
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
GaNFET (Gallium Nitride)
600 V
15A (Tc)
-
-
1.6V @ 2.6mA
-
-10V
380 pF @ 400 V
-
114W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
PG-LSON-8-1
8-LDFN Exposed Pad
GAN041-650WSBQ
GAN041-650WSBQ
GAN041-650WSB/SOT429/TO-247
Nexperia USA Inc.
208
In Stock
1 : ¥143.59000
Tube
-
Tube
Active
N-Channel
GaNFET (Cascode Gallium Nitride FET)
650 V
47.2A (Tc)
10V
41mOhm @ 32A, 10V
4.5V @ 1mA
22 nC @ 10 V
±20V
1500 pF @ 400 V
-
187W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
TO-247-3
TO-247-3
TP65H150G4LSG-TR
TP65H150G4LSG-TR
650 V 13 A GAN FET
Transphorm
5,887
In Stock
1 : ¥39.57000
Cut Tape (CT)
3,000 : ¥19.25380
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
GaNFET (Gallium Nitride)
650 V
13A (Tc)
10V
180mOhm @ 8.5A, 10V
4.8V @ 500µA
8 nC @ 10 V
±20V
598 pF @ 400 V
-
52W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
3-PQFN (8x8)
3-PowerTDFN
4,892
In Stock
1 : ¥35.63000
Cut Tape (CT)
5,000 : ¥16.62485
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
GaNFET (Gallium Nitride)
600 V
8.2A (Tc)
-
-
1.6V @ 530µA
-
-10V
87.7 pF @ 400 V
-
41.6W (Tc)
-40°C ~ 150°C (TJ)
-
-
Surface Mount
PG-TSON-8-7
8-PowerTDFN
4,962
In Stock
1 : ¥38.26000
Cut Tape (CT)
5,000 : ¥17.85632
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
GaNFET (Gallium Nitride)
600 V
10.4A (Tc)
-
-
1.6V @ 690µA
-
-10V
110 pF @ 400 V
-
52W (Tc)
-40°C ~ 150°C (TJ)
-
-
Surface Mount
PG-TSON-8-7
8-PowerTDFN
EPC2055
EPC2055
GANFET N-CH 40V 29A DIE
EPC
0
In Stock
Check Lead Time
1 : ¥20.03000
Cut Tape (CT)
2,500 : ¥9.04313
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
GaNFET (Gallium Nitride)
40 V
29A (Ta)
5V
3.6mOhm @ 15A, 5V
2.5V @ 7mA
8.5 nC @ 5 V
+6V, -4V
1111 pF @ 20 V
-
-
-40°C ~ 150°C (TJ)
-
-
Surface Mount
Die
Die
0
In Stock
Check Lead Time
3,000 : ¥25.35084
Tape & Reel (TR)
Tape & Reel (TR)
Active
N-Channel
GaNFET (Gallium Nitride)
600 V
10A (Tc)
-
-
1.6V @ 960µA
-
-10V
157 pF @ 400 V
-
62.5W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
PG-LSON-8-1
8-LDFN Exposed Pad
Showing
of 17

Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.