Single FETs, MOSFETs

Results: 17
Manufacturer
Cambridge GaN DevicesEPCInfineon TechnologiesNexperia USA Inc.Rohm SemiconductorTransphorm
Series
-CoolGaN™eGaN®ICeGaN™SuperGaN™
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)Tube
FET Type
-N-Channel
Technology
GaNFET (Cascode Gallium Nitride FET)GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss)
100 V350 V600 V650 V
Current - Continuous Drain (Id) @ 25°C
3.6A (Tc)6.3A (Ta)8.5A (Tc)10.4A (Tc)11A (Tc)11.5A (Tc)12.8A (Tc)15A (Tc)17A (Tc)20A (Tc)27A (Tc)29A (Tc)31A (Tc)60A
Drive Voltage (Max Rds On, Min Rds On)
5V5V, 5.5V6V8V9V, 20V10V12V-
Rds On (Max) @ Id, Vgs
3.2mOhm @ 25A, 5V18mOhm @ 60A, 10V77mOhm @ 2.2A, 12V80mOhm @ 8A, 6V98mOhm @ 1.9A, 5.5V140mOhm @ 5A, 6V180mOhm @ 6A, 5V190mOhm @ 3.9A, 6V195mOhm @ 1.9A, 5.5V280mOhm @ 600mA, 12V560mOhm @ 3.4A, 8V-
Vgs(th) (Max) @ Id
1.6V @ 2.6mA1.6V @ 690µA1.6V @ 960µA2.4V @ 18mA2.5V @ 12.2mA2.5V @ 17.2mA2.5V @ 1mA2.5V @ 30.7mA2.5V @ 9mA2.8V @ 500µA4.2V @ 10mA4.2V @ 2.75mA4.8V @ 2mA-
Gate Charge (Qg) (Max) @ Vgs
1.4 nC @ 12 V2.7 nC @ 6 V2.8 nC @ 6 V3.5 nC @ 6 V4 nC @ 5 V5.2 nC @ 6 V6 nC @ 12 V6.2 nC @ 6 V9 nC @ 8 V12 nC @ 5 V100 nC @ 10 V
Vgs (Max)
-10V+6V, -10V+6V, -4V+7V, -1.4V+7V, -6V±18V+20V, -1V±20V-
Input Capacitance (Ciss) (Max) @ Vds
96 pF @ 400 V110 pF @ 400 V112 pF @ 400 V125 pF @ 400 V157 pF @ 400 V200 pF @ 400 V225 pF @ 400 V380 pF @ 400 V628 pF @ 280 V760 pF @ 400 V1000 pF @ 50 V5218 pF @ 400 V
FET Feature
-Current Sensing
Power Dissipation (Max)
13.2W (Tc)52W (Tc)55.5W (Tc)56W (Tc)62.5W (Tc)113W (Tc)114W (Tc)125W (Tc)240W (Tc)266W (Tc)394W-
Operating Temperature
-55°C ~ 150°C (TJ)-40°C ~ 150°C (TJ)150°C (TJ)-
Mounting Type
Surface MountSurface Mount, Wettable FlankThrough Hole
Supplier Device Package
3-PQFN (5x6)8-DFN (5x6)8-WLCSP (3.5x2.13)16-DFN (8x8)DFN5060-5DFN8080-8DFN8080AKDFN8080KDiePG-DSO-20-85PG-DSO-20-87PG-LSON-8-1PG-TSON-8-6PG-TSON-8-7
Package / Case
3-PowerTDFN8-LDFN Exposed Pad8-PowerDFN8-PowerTDFN8-PowerVDFN8-VDFN Exposed Pad8-XFBGA, WLCSP16-PowerVDFN20-PowerSOIC (0.433", 11.00mm Width)DieTO-247-3
Stocking Options
Environmental Options
Media
Marketplace Product
17Results
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Grade
Qualification
Mounting Type
Supplier Device Package
Package / Case
EPC2050
EPC2050
TRANS GAN BUMPED DIE
EPC
13,955
In Stock
1 : ¥33.66000
Cut Tape (CT)
2,500 : ¥22.37172
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
GaNFET (Gallium Nitride)
350 V
6.3A (Ta)
5V
180mOhm @ 6A, 5V
2.5V @ 1mA
4 nC @ 5 V
+6V, -4V
628 pF @ 280 V
-
-
-40°C ~ 150°C (TJ)
-
-
Surface Mount
Die
Die
905
In Stock
1 : ¥101.56000
Cut Tape (CT)
800 : ¥70.09563
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
GaNFET (Gallium Nitride)
600 V
31A (Tc)
-
-
1.6V @ 2.6mA
-
-10V
380 pF @ 400 V
-
125W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
PG-DSO-20-87
20-PowerSOIC (0.433", 11.00mm Width)
TP65H015G5WS
TP65H015G5WS
650 V 95 A GAN FET
Transphorm
170
In Stock
1 : ¥264.85000
Tube
Tube
Active
N-Channel
GaNFET (Gallium Nitride)
650 V
93A (Tc)
10V
18mOhm @ 60A, 10V
4.8V @ 2mA
100 nC @ 10 V
±20V
5218 pF @ 400 V
-
266W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
TO-247-3
TO-247-3
GAN140-650FBEZ
GAN190-650FBEZ
650 V, 190 MOHM GALLIUM NITRIDE
Nexperia USA Inc.
1,895
In Stock
1 : ¥34.15000
Cut Tape (CT)
2,500 : ¥10.98061
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
GaNFET (Gallium Nitride)
650 V
11.5A (Tc)
6V
190mOhm @ 3.9A, 6V
2.5V @ 12.2mA
2.8 nC @ 6 V
+7V, -1.4V
96 pF @ 400 V
-
125W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount, Wettable Flank
DFN5060-5
8-PowerVDFN
GAN3R2-100CBEAZ
GAN3R2-100CBEAZ
100 V, 3.2 MOHM GALLIUM NITRIDE
Nexperia USA Inc.
811
In Stock
1 : ¥39.82000
Cut Tape (CT)
1,500 : ¥14.65992
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
GaNFET (Gallium Nitride)
100 V
60A
5V
3.2mOhm @ 25A, 5V
2.5V @ 9mA
12 nC @ 5 V
+6V, -4V
1000 pF @ 50 V
-
394W
-40°C ~ 150°C (TJ)
-
-
Surface Mount
8-WLCSP (3.5x2.13)
8-XFBGA, WLCSP
GNP1150TCA-ZE2
GNP1150TCA-ZE2
ECOGAN, 650V 11A DFN8080AK, E-MO
Rohm Semiconductor
2,864
In Stock
1 : ¥41.95000
Cut Tape (CT)
3,500 : ¥20.41973
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
GaNFET (Gallium Nitride)
650 V
11A (Tc)
5V, 5.5V
195mOhm @ 1.9A, 5.5V
2.4V @ 18mA
2.7 nC @ 6 V
+6V, -10V
112 pF @ 400 V
-
62.5W (Tc)
150°C (TJ)
-
-
Surface Mount
DFN8080AK
8-PowerDFN
GAN080-650EBEZ
GAN080-650EBEZ
650 V, 80 MOHM GALLIUM NITRIDE (
Nexperia USA Inc.
1,940
In Stock
1 : ¥70.19000
Cut Tape (CT)
2,500 : ¥26.88711
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
GaNFET (Gallium Nitride)
650 V
29A (Tc)
6V
80mOhm @ 8A, 6V
2.5V @ 30.7mA
6.2 nC @ 6 V
+7V, -6V
225 pF @ 400 V
-
240W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount, Wettable Flank
DFN8080-8
8-VDFN Exposed Pad
GNP1070TC-ZE2
GNP1070TC-ZE2
ECOGAN, 650V 20A DFN8080K, E-MOD
Rohm Semiconductor
3,034
In Stock
1 : ¥77.83000
Cut Tape (CT)
3,500 : ¥38.35921
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
GaNFET (Gallium Nitride)
650 V
20A (Tc)
5V, 5.5V
98mOhm @ 1.9A, 5.5V
2.4V @ 18mA
5.2 nC @ 6 V
+6V, -10V
200 pF @ 400 V
-
56W (Tc)
150°C (TJ)
-
-
Surface Mount
DFN8080K
8-PowerDFN
1,477
In Stock
1 : ¥93.02000
Cut Tape (CT)
3,000 : ¥54.80045
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
GaNFET (Gallium Nitride)
600 V
15A (Tc)
-
-
1.6V @ 2.6mA
-
-10V
380 pF @ 400 V
-
114W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
PG-LSON-8-1
8-LDFN Exposed Pad
TP65H480G4JSG-TR
TP65H480G4JSG-TR
GANFET N-CH 650V 3.6A 3PQFN
Transphorm
2,788
In Stock
1 : ¥24.38000
Cut Tape (CT)
4,000 : ¥11.39111
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
GaNFET (Cascode Gallium Nitride FET)
650 V
3.6A (Tc)
8V
560mOhm @ 3.4A, 8V
2.8V @ 500µA
9 nC @ 8 V
±18V
760 pF @ 400 V
-
13.2W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
3-PQFN (5x6)
3-PowerTDFN
4,947
In Stock
1 : ¥46.96000
Cut Tape (CT)
5,000 : ¥17.85632
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
GaNFET (Gallium Nitride)
600 V
10.4A (Tc)
-
-
1.6V @ 690µA
-
-10V
110 pF @ 400 V
-
52W (Tc)
-40°C ~ 150°C (TJ)
-
-
Surface Mount
PG-TSON-8-7
8-PowerTDFN
4,085
In Stock
1 : ¥47.86000
Cut Tape (CT)
5,000 : ¥22.37172
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
GaNFET (Gallium Nitride)
600 V
12.8A (Tc)
-
-
1.6V @ 960µA
-
-10V
157 pF @ 400 V
-
55.5W (Tc)
-40°C ~ 150°C (TJ)
-
-
Surface Mount
PG-TSON-8-6
8-PowerTDFN
GAN140-650FBEZ
GAN140-650FBEZ
650 V, 140 MOHM GALLIUM NITRIDE
Nexperia USA Inc.
2,361
In Stock
1 : ¥47.86000
Cut Tape (CT)
2,500 : ¥17.13797
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
GaNFET (Gallium Nitride)
650 V
17A (Tc)
6V
140mOhm @ 5A, 6V
2.5V @ 17.2mA
3.5 nC @ 6 V
+7V, -1.4V
125 pF @ 400 V
-
113W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount, Wettable Flank
DFN5060-5
8-PowerVDFN
794
In Stock
1 : ¥101.56000
Cut Tape (CT)
800 : ¥70.09563
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
GaNFET (Gallium Nitride)
600 V
31A (Tc)
-
-
1.6V @ 2.6mA
-
-10V
380 pF @ 400 V
-
125W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
PG-DSO-20-85
20-PowerSOIC (0.433", 11.00mm Width)
CGD65B200S2-T13
CGD65B200S2-T13
650V GAN HEMT, 200MOHM, DFN5X6.
Cambridge GaN Devices
4,228
In Stock
1 : ¥37.35000
Cut Tape (CT)
5,000 : ¥17.44583
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
-
GaNFET (Gallium Nitride)
650 V
8.5A (Tc)
9V, 20V
280mOhm @ 600mA, 12V
4.2V @ 2.75mA
1.4 nC @ 12 V
+20V, -1V
-
Current Sensing
-
-55°C ~ 150°C (TJ)
-
-
Surface Mount
8-DFN (5x6)
8-PowerVDFN
CGD65A055S2-T07
CGD65A055S2-T07
650V GAN HEMT, 55MOHM, DFN8X8. W
Cambridge GaN Devices
704
In Stock
1 : ¥123.64000
Cut Tape (CT)
1,000 : ¥78.30044
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
-
GaNFET (Gallium Nitride)
650 V
27A (Tc)
12V
77mOhm @ 2.2A, 12V
4.2V @ 10mA
6 nC @ 12 V
+20V, -1V
-
Current Sensing
-
-55°C ~ 150°C (TJ)
-
-
Surface Mount
16-DFN (8x8)
16-PowerVDFN
0
In Stock
Check Lead Time
800 : ¥114.10069
Tape & Reel (TR)
Tape & Reel (TR)
Active
-
GaNFET (Gallium Nitride)
600 V
-
-
-
-
-
-
-
-
-
-
-
-
Surface Mount
PG-DSO-20-85
20-PowerSOIC (0.433", 11.00mm Width)
Showing
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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.