Single FETs, MOSFETs

Results: 9
Manufacturer
Infineon TechnologiesonsemiToshiba Semiconductor and StorageVishay Siliconix
Series
-HEXFET®OptiMOS™PowerTrench®QFET®TrenchFET®
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)Tube
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
60 V100 V150 V
Current - Continuous Drain (Id) @ 25°C
3A (Tc)8.1A (Ta), 21A (Tc)9.6A (Ta), 35A (Tc)11A (Tc)23A (Tc)36A (Tc)50A (Tc)64A (Tc)104A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V6V, 10V8V, 10V10V
Rds On (Max) @ Id, Vgs
6.5mOhm @ 32A, 10V10.8mOhm @ 18A, 10V11mOhm @ 62A, 10V18mOhm @ 9.6A, 10V19mOhm @ 50A, 10V27.5mOhm @ 7.5A, 10V38mOhm @ 10A, 10V200mOhm @ 6.6A, 10V1.5Ohm @ 1.5A, 10V
Vgs(th) (Max) @ Id
2.2V @ 13µA2.3V @ 20µA2.5V @ 250µA2.5V @ 300µA4V @ 250µA4V @ 90µA5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
5.8 nC @ 10 V9 nC @ 10 V13 nC @ 4.5 V20 nC @ 10 V31 nC @ 10 V33 nC @ 10 V46 nC @ 10 V61 nC @ 10 V120 nC @ 10 V
Vgs (Max)
±20V±30V
Input Capacitance (Ciss) (Max) @ Vds
270 pF @ 25 V330 pF @ 25 V700 pF @ 25 V1400 pF @ 25 V1800 pF @ 30 V2040 pF @ 50 V2420 pF @ 75 V2715 pF @ 75 V5270 pF @ 50 V
Power Dissipation (Max)
2.5W (Ta), 104W (Tc)3.4W (Ta), 24W (Tc)36W (Tc)42W (Tc)45W (Tc)46W (Tc)48W (Tc)125W (Tc)380W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)175°C
Mounting Type
Surface MountThrough Hole
Supplier Device Package
5-DFN (5x6) (8-SOFL)8-MLP (3.3x3.3)8-PQFN (5x6)PG-TDSON-8-1PG-TDSON-8-6PowerPAK® SO-8TO-220-3TO-220ABTO-220SIS
Package / Case
8-PowerTDFN8-PowerTDFN, 5 Leads8-PowerWDFNPowerPAK® SO-8TO-220-3TO-220-3 Full PackTO-220-3 Full Pack, Isolated Tab
Stocking Options
Environmental Options
Media
Marketplace Product
9Results
Showing
of 9
Compare
Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Grade
Qualification
Mounting Type
Supplier Device Package
Package / Case
PowerPak SO-8L
SQJ476EP-T1_GE3
MOSFET N-CH 100V 23A PPAK SO-8
Vishay Siliconix
22,470
In Stock
1 : ¥7.47000
Cut Tape (CT)
3,000 : ¥2.83110
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
100 V
23A (Tc)
4.5V, 10V
38mOhm @ 10A, 10V
2.5V @ 250µA
20 nC @ 10 V
±20V
700 pF @ 25 V
-
45W (Tc)
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Surface Mount
PowerPAK® SO-8
PowerPAK® SO-8
8-Power TDFN
BSC065N06LS5ATMA1
MOSFET N-CHANNEL 60V 64A 8TDSON
Infineon Technologies
8,983
In Stock
1 : ¥12.23000
Cut Tape (CT)
5,000 : ¥4.81627
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
64A (Tc)
4.5V, 10V
6.5mOhm @ 32A, 10V
2.3V @ 20µA
13 nC @ 4.5 V
±20V
1800 pF @ 30 V
-
46W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
PG-TDSON-8-6
8-PowerTDFN
8-PQFN
FDMS86200
MOSFET N-CH 150V 9.6A/35A 8PQFN
onsemi
8,947
In Stock
1 : ¥20.36000
Cut Tape (CT)
3,000 : ¥9.17769
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
150 V
9.6A (Ta), 35A (Tc)
6V, 10V
18mOhm @ 9.6A, 10V
4V @ 250µA
46 nC @ 10 V
±20V
2715 pF @ 75 V
-
2.5W (Ta), 104W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
8-PQFN (5x6)
8-PowerTDFN
PG-TDSON-8-1
BSC190N15NS3GATMA1
MOSFET N-CH 150V 50A TDSON-8-1
Infineon Technologies
12,777
In Stock
1 : ¥23.73000
Cut Tape (CT)
5,000 : ¥10.28462
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
150 V
50A (Tc)
8V, 10V
19mOhm @ 50A, 10V
4V @ 90µA
31 nC @ 10 V
±20V
2420 pF @ 75 V
-
125W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
PG-TDSON-8-1
8-PowerTDFN
TO-220AB PKG
IRFB4115PBF
MOSFET N-CH 150V 104A TO220AB
Infineon Technologies
10,712
In Stock
1 : ¥28.24000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
150 V
104A (Tc)
10V
11mOhm @ 62A, 10V
5V @ 250µA
120 nC @ 10 V
±20V
5270 pF @ 50 V
-
380W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
TO-220AB
TO-220-3
8-MLP, Power33
FDMC2523P
MOSFET P-CH 150V 3A 8MLP
onsemi
999
In Stock
1 : ¥12.64000
Cut Tape (CT)
3,000 : ¥5.70160
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
150 V
3A (Tc)
10V
1.5Ohm @ 1.5A, 10V
5V @ 250µA
9 nC @ 10 V
±30V
270 pF @ 25 V
-
42W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
8-MLP (3.3x3.3)
8-PowerWDFN
TK110A10PL,S4X
TK110A10PL,S4X
X35 PB-F POWER MOSFET TRANSISTOR
Toshiba Semiconductor and Storage
251
In Stock
1 : ¥13.05000
Tube
-
Tube
Active
N-Channel
MOSFET (Metal Oxide)
100 V
36A (Tc)
4.5V, 10V
10.8mOhm @ 18A, 10V
2.5V @ 300µA
33 nC @ 10 V
±20V
2040 pF @ 50 V
-
36W (Tc)
175°C
-
-
Through Hole
TO-220SIS
TO-220-3 Full Pack
TO-220AB Full Pack
IRFI9540GPBF
MOSFET P-CH 100V 11A TO220-3
Vishay Siliconix
940
In Stock
1 : ¥28.57000
Tube
-
Tube
Active
P-Channel
MOSFET (Metal Oxide)
100 V
11A (Tc)
10V
200mOhm @ 6.6A, 10V
4V @ 250µA
61 nC @ 10 V
±20V
1400 pF @ 25 V
-
48W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
TO-220-3
TO-220-3 Full Pack, Isolated Tab
5-DFN, 8-SO Flat Lead
NVMFS5C680NLT1G
MOSFET N-CH 60V 8.1A/21A 5DFN
onsemi
1,066
In Stock
1 : ¥8.46000
Cut Tape (CT)
1,500 : ¥3.71280
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
8.1A (Ta), 21A (Tc)
4.5V, 10V
27.5mOhm @ 7.5A, 10V
2.2V @ 13µA
5.8 nC @ 10 V
±20V
330 pF @ 25 V
-
3.4W (Ta), 24W (Tc)
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Surface Mount
5-DFN (5x6) (8-SOFL)
8-PowerTDFN, 5 Leads
Showing
of 9

Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.