Single FETs, MOSFETs

Results: 3
Manufacturer
Diodes IncorporatedNexperia USA Inc.Rohm Semiconductor
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
20 V30 V100 V
Current - Continuous Drain (Id) @ 25°C
1.5A (Ta)2.3A (Ta)6.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
1.5V, 4.5V2.5V, 10V4V, 10V
Rds On (Max) @ Id, Vgs
25mOhm @ 4A, 10V170mOhm @ 2A, 4.5V470mOhm @ 1.5A, 10V
Vgs(th) (Max) @ Id
950mV @ 250µA1.8V @ 250µA2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
6.5 nC @ 4.5 V10.9 nC @ 10 V17 nC @ 5 V
Vgs (Max)
±8V±20V
Input Capacitance (Ciss) (Max) @ Vds
418 pF @ 10 V680 pF @ 15 V950 pF @ 25 V
Power Dissipation (Max)
480mW (Ta)860mW (Ta)950mW (Ta)
Operating Temperature
-55°C ~ 150°C (TJ)150°C (TJ)
Supplier Device Package
SOT-23-3TO-236ABTSMT6 (SC-95)
Package / Case
SOT-23-6 Thin, TSOT-23-6TO-236-3, SC-59, SOT-23-3
Stocking Options
Environmental Options
Media
Marketplace Product
3Results
Showing
of 3
Compare
Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Grade
Qualification
Mounting Type
Supplier Device Package
Package / Case
SOT-23-3
DMN3028LQ-7
MOSFET BVDSS: 25V~30V,SOT23,T&R,
Diodes Incorporated
47,104
In Stock
1 : ¥2.63000
Cut Tape (CT)
3,000 : ¥1.04876
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
30 V
6.2A (Ta)
2.5V, 10V
25mOhm @ 4A, 10V
1.8V @ 250µA
10.9 nC @ 10 V
±20V
680 pF @ 15 V
-
860mW (Ta)
-55°C ~ 150°C (TJ)
Automotive
AEC-Q101
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3
TSMT6_TSMT6 Pkg
RSQ015P10HZGTR
MOSFET P-CH 100V 1.5A TSMT6
Rohm Semiconductor
22,900
In Stock
1 : ¥4.52000
Cut Tape (CT)
3,000 : ¥2.11395
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
100 V
1.5A (Ta)
4V, 10V
470mOhm @ 1.5A, 10V
2.5V @ 1mA
17 nC @ 5 V
±20V
950 pF @ 25 V
-
950mW (Ta)
150°C (TJ)
Automotive
AEC-Q101
Surface Mount
TSMT6 (SC-95)
SOT-23-6 Thin, TSOT-23-6
TO-236AB
BSH205G2VL
MOSFET P-CH 20V 2.3A TO236AB
Nexperia USA Inc.
6,800
In Stock
1 : ¥3.86000
Cut Tape (CT)
10,000 : ¥0.64471
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
20 V
2.3A (Ta)
1.5V, 4.5V
170mOhm @ 2A, 4.5V
950mV @ 250µA
6.5 nC @ 4.5 V
±8V
418 pF @ 10 V
-
480mW (Ta)
-55°C ~ 150°C (TJ)
Automotive
AEC-Q101
Surface Mount
TO-236AB
TO-236-3, SC-59, SOT-23-3
Showing
of 3

Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.