Single FETs, MOSFETs

Results: 4
Manufacturer
Diodes IncorporatedMicro Commercial Coonsemi
Series
-PowerTrench®
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Product Status
ActiveNot For New Designs
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
20 V100 V
Current - Continuous Drain (Id) @ 25°C
4.2A (Ta)6.8A (Tc)12A (Tc)18A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
2.5V, 4.5V4.5V, 10V5V, 10V
Rds On (Max) @ Id, Vgs
38mOhm @ 3.6A, 4.5V110mOhm @ 10A, 10V140mOhm @ 5A, 10V160mOhm @ 3.4A, 10V
Vgs(th) (Max) @ Id
1V @ 250µA2.5V @ 250µA2.8V @ 250µA3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
3.61 nC @ 10 V7 nC @ 4.5 V9.7 nC @ 10 V20 nC @ 10 V
Vgs (Max)
±8V±20V
Input Capacitance (Ciss) (Max) @ Vds
225 pF @ 50 V594.3 pF @ 10 V1050 pF @ 80 V1167 pF @ 25 V
Power Dissipation (Max)
800mW (Ta)14.9W (Tc)42W (Tc)70W
Supplier Device Package
DPAKSOT-23-3TO-252-3TO-252AA
Package / Case
TO-236-3, SC-59, SOT-23-3TO-252-3, DPAK (2 Leads + Tab), SC-63
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
TO-252-2
DMN10H170SK3-13
MOSFET N-CH 100V 12A TO252-3
Diodes Incorporated
133,942
In Stock
237,500
Factory
1 : ¥3.45000
Cut Tape (CT)
2,500 : ¥1.61626
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
100 V
12A (Tc)
4.5V, 10V
140mOhm @ 5A, 10V
3V @ 250µA
9.7 nC @ 10 V
±20V
1167 pF @ 25 V
-
42W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
TO-252-3
TO-252-3, DPAK (2 Leads + Tab), SC-63
TO-252AA
FDD1600N10ALZ
MOSFET N-CH 100V 6.8A TO252
onsemi
3,562
In Stock
1 : ¥8.05000
Cut Tape (CT)
2,500 : ¥3.32072
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
100 V
6.8A (Tc)
5V, 10V
160mOhm @ 3.4A, 10V
2.8V @ 250µA
3.61 nC @ 10 V
±20V
225 pF @ 50 V
-
14.9W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
TO-252AA
TO-252-3, DPAK (2 Leads + Tab), SC-63
SOT-23-3
DMN2075U-7
MOSFET N-CH 20V 4.2A SOT23-3
Diodes Incorporated
20,588
In Stock
12,105,000
Factory
1 : ¥3.20000
Cut Tape (CT)
3,000 : ¥0.57289
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Not For New Designs
N-Channel
MOSFET (Metal Oxide)
20 V
4.2A (Ta)
2.5V, 4.5V
38mOhm @ 3.6A, 4.5V
1V @ 250µA
7 nC @ 4.5 V
±8V
594.3 pF @ 10 V
-
800mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3
MBRD6100CT-TP
MCU18P10Y-TP
MOSFET P-CH 100V 18A DPAK
Micro Commercial Co
3,736
In Stock
1 : ¥6.90000
Cut Tape (CT)
2,500 : ¥2.61949
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
100 V
18A (Tc)
-
110mOhm @ 10A, 10V
2.5V @ 250µA
20 nC @ 10 V
±20V
1050 pF @ 80 V
-
70W
-55°C ~ 150°C (TJ)
Surface Mount
DPAK
TO-252-3, DPAK (2 Leads + Tab), SC-63
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of 4

Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.