Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case

NTS4001NT1G MOSFET N-CH 30V 270MA SC70-3 onsemi	47,872 In Stock	1 : ¥3.86000 Cut Tape (CT) 3,000 : ¥0.69154 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	30 V	270mA (Ta)	2.5V, 4V	1.5Ohm @ 10mA, 4V	1.5V @ 100µA	1.3 nC @ 5 V	±20V	33 pF @ 5 V	-	330mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	SC-70-3 (SOT323)	SC-70, SOT-323
ZVN4310GTA MOSFET N-CH 100V 1.67A SOT223 Diodes Incorporated	3,716 In Stock 64,000 Factory	1 : ¥12.81000 Cut Tape (CT) 1,000 : ¥5.61025 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT)	Active	N-Channel	MOSFET (Metal Oxide)	100 V	1.67A (Ta)	5V, 10V	540mOhm @ 3.3A, 10V	3V @ 1mA	-	±20V	350 pF @ 25 V	-	3W (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	SOT-223-3	TO-261-4, TO-261AA
TK56A12N1,S4X MOSFET N-CH 120V 56A TO220SIS Toshiba Semiconductor and Storage	122 In Stock	1 : ¥22.66000 Tube	U-MOSVIII-H	Tube	Active	N-Channel	MOSFET (Metal Oxide)	120 V	56A (Tc)	10V	7.5mOhm @ 28A, 10V	4V @ 1mA	69 nC @ 10 V	±20V	4200 pF @ 60 V	-	45W (Tc)	150°C (TJ)	Through Hole	TO-220SIS	TO-220-3 Full Pack

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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.