Single FETs, MOSFETs

Results: 13
Manufacturer
Infineon TechnologiesNexperia USA Inc.onsemiVishay Siliconix
Series
-OptiMOS™ 5ThunderFET®TrenchFET®TrenchFET® Gen IIITrenchFET® Gen IVTrenchMOS™
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Product Status
ActiveObsolete
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
20 V60 V80 V100 V
Current - Continuous Drain (Id) @ 25°C
170mA (Ta)300mA (Tc)2A (Tc)2.8A (Tc)3.1A (Tc)10.8A (Tc)18A (Tc)23A (Tc)23.7A (Ta), 81.2A (Tc)30A (Tc)35.1A (Ta), 127.5A (Tc)44A (Tc)300A (Tj)
Drive Voltage (Max Rds On, Min Rds On)
1.5V, 4.5V2.5V, 10V4.5V, 10V6V, 10V10V
Rds On (Max) @ Id, Vgs
1.5mOhm @ 100A, 10V2.7mOhm @ 15A, 10V4.3mOhm @ 15A, 10V14.6mOhm @ 22A, 10V21mOhm @ 10A, 10V23.5mOhm @ 10A, 10V59mOhm @ 5A, 10V126mOhm @ 2A, 10V132mOhm @ 3.8A, 10V177mOhm @ 2.4A, 10V240mOhm @ 2A, 4.5V5Ohm @ 500mA, 10V6Ohm @ 100mA, 10V
Vgs(th) (Max) @ Id
1V @ 250µA1.5V @ 250µA2.3V @ 23µA2.5V @ 250µA2.6V @ 1mA2.6V @ 250µA3V @ 250µA3.8V @ 275µA
Gate Charge (Qg) (Max) @ Vgs
2.5 nC @ 4.5 V10 nC @ 4.5 V10.4 nC @ 10 V12 nC @ 10 V15 nC @ 4.5 V16.5 nC @ 10 V21 nC @ 10 V29 nC @ 10 V48 nC @ 10 V216 nC @ 10 V236 nC @ 8 V
Vgs (Max)
±8V±12V±20V±30V
Input Capacitance (Ciss) (Max) @ Vds
20 pF @ 25 V50 pF @ 10 V196 pF @ 50 V330 pF @ 25 V515 pF @ 50 V550 pF @ 30 V802 pF @ 50 V1050 pF @ 50 V1300 pF @ 50 V1358 pF @ 40 V1980 pF @ 30 V7080 pF @ 10 V16011 pF @ 50 V
Power Dissipation (Max)
225mW (Ta)830mW (Ta)1.25W (Ta), 2.5W (Tc)2W (Tc)2.5W (Ta), 52W (Tc)3W (Tc)3.7W (Ta), 52W (Tc)4.8W (Ta), 57W (Tc)5W (Ta), 65.8W (Tc)27.8W (Tc)57W (Tc)62.5W (Tc)375W (Tc)
Operating Temperature
-65°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)
Supplier Device Package
PG-HDSOP-16-2PG-TDSON-8-6PowerPAK® 1212-8PowerPAK® 1212-8SSOT-23-3 (TO-236)TO-236AB
Package / Case
8-PowerTDFN16-PowerSOP ModulePowerPAK® 1212-8PowerPAK® 1212-8STO-236-3, SC-59, SOT-23-3
Stocking Options
Environmental Options
Media
Marketplace Product
13Results

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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Grade
Qualification
Mounting Type
Supplier Device Package
Package / Case
TO-236AB
2N7002,215
MOSFET N-CH 60V 300MA TO236AB
Nexperia USA Inc.
586,586
In Stock
1 : ¥2.22000
Cut Tape (CT)
3,000 : ¥0.37855
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
300mA (Tc)
10V
5Ohm @ 500mA, 10V
2.5V @ 250µA
-
±30V
50 pF @ 10 V
-
830mW (Ta)
-65°C ~ 150°C (TJ)
-
-
Surface Mount
TO-236AB
TO-236-3, SC-59, SOT-23-3
SOT 23-3
BSS123LT1G
MOSFET N-CH 100V 170MA SOT23-3
onsemi
270,963
In Stock
1 : ¥2.96000
Cut Tape (CT)
3,000 : ¥0.49111
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
100 V
170mA (Ta)
10V
6Ohm @ 100mA, 10V
2.6V @ 1mA
-
±20V
20 pF @ 25 V
-
225mW (Ta)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
SOT-23-3 (TO-236)
TO-236-3, SC-59, SOT-23-3
SOT-23-3
SQ2364EES-T1_GE3
MOSFET N-CH 60V 2A SOT23-3
Vishay Siliconix
24,544
In Stock
1 : ¥5.25000
Cut Tape (CT)
3,000 : ¥1.77589
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
2A (Tc)
1.5V, 4.5V
240mOhm @ 2A, 4.5V
1V @ 250µA
2.5 nC @ 4.5 V
±8V
330 pF @ 25 V
-
3W (Tc)
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Surface Mount
SOT-23-3 (TO-236)
TO-236-3, SC-59, SOT-23-3
PowerPAK 1212-8
SIS890DN-T1-GE3
MOSFET N-CH 100V 30A PPAK1212-8
Vishay Siliconix
31,243
In Stock
1 : ¥11.08000
Cut Tape (CT)
3,000 : ¥4.58397
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
100 V
30A (Tc)
4.5V, 10V
23.5mOhm @ 10A, 10V
3V @ 250µA
29 nC @ 10 V
±20V
802 pF @ 50 V
-
3.7W (Ta), 52W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
PowerPAK® 1212-8
PowerPAK® 1212-8
8-Power TDFN
BSC146N10LS5ATMA1
MOSFET N-CH 100V 44A TDSON-8-6
Infineon Technologies
10,947
In Stock
1 : ¥11.25000
Cut Tape (CT)
5,000 : ¥4.27233
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
100 V
44A (Tc)
4.5V, 10V
14.6mOhm @ 22A, 10V
2.3V @ 23µA
10 nC @ 4.5 V
±20V
1300 pF @ 50 V
-
2.5W (Ta), 52W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
PG-TDSON-8-6
8-PowerTDFN
IAUS300N08S5N012TATMA1
IAUS300N10S5N015TATMA1
MOSFET N-CH 100V 300A HDSOP-16-2
Infineon Technologies
2,331
In Stock
1 : ¥57.96000
Cut Tape (CT)
1,800 : ¥32.88816
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
100 V
300A (Tj)
6V, 10V
1.5mOhm @ 100A, 10V
3.8V @ 275µA
216 nC @ 10 V
±20V
16011 pF @ 50 V
-
375W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
PG-HDSOP-16-2
16-PowerSOP Module
PowerPAK 1212-8S
SISS63DN-T1-GE3
MOSFET P-CH 20V 35.1/127.5A PPAK
Vishay Siliconix
39,765
In Stock
1 : ¥7.96000
Cut Tape (CT)
3,000 : ¥3.28236
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
20 V
35.1A (Ta), 127.5A (Tc)
2.5V, 10V
2.7mOhm @ 15A, 10V
1.5V @ 250µA
236 nC @ 8 V
±12V
7080 pF @ 10 V
-
5W (Ta), 65.8W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
PowerPAK® 1212-8S
PowerPAK® 1212-8S
PowerPAK 1212-8
SQSA80ENW-T1_GE3
MOSFET N-CH 80V 18A PPAK1212-8
Vishay Siliconix
10,621
In Stock
1 : ¥8.70000
Cut Tape (CT)
3,000 : ¥3.61511
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
80 V
18A (Tc)
4.5V, 10V
21mOhm @ 10A, 10V
2.5V @ 250µA
21 nC @ 10 V
±20V
1358 pF @ 40 V
-
62.5W (Tc)
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Surface Mount
PowerPAK® 1212-8
PowerPAK® 1212-8
PowerPAK 1212-8S
SISS26LDN-T1-GE3
MOSFET N-CH 60V 23.7A/81.2A PPAK
Vishay Siliconix
6,609
In Stock
1 : ¥10.26000
Cut Tape (CT)
3,000 : ¥4.24441
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
23.7A (Ta), 81.2A (Tc)
4.5V, 10V
4.3mOhm @ 15A, 10V
2.5V @ 250µA
48 nC @ 10 V
±20V
1980 pF @ 30 V
-
4.8W (Ta), 57W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
PowerPAK® 1212-8S
PowerPAK® 1212-8S
SOT-23-3
SQ2361ES-T1_GE3
MOSFET P-CH 60V 2.8A SSOT23
Vishay Siliconix
148,731
In Stock
1 : ¥8.21000
Cut Tape (CT)
3,000 : ¥1.88700
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Obsolete
P-Channel
MOSFET (Metal Oxide)
60 V
2.8A (Tc)
10V
177mOhm @ 2.4A, 10V
2.5V @ 250µA
12 nC @ 10 V
±20V
550 pF @ 30 V
-
2W (Tc)
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Surface Mount
-
TO-236-3, SC-59, SOT-23-3
PowerPAK 1212-8
SI7113ADN-T1-GE3
MOSFET P-CH 100V 10.8A PPAK
Vishay Siliconix
0
In Stock
Check Lead Time
1 : ¥5.25000
Cut Tape (CT)
3,000 : ¥1.76732
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
100 V
10.8A (Tc)
4.5V, 10V
132mOhm @ 3.8A, 10V
2.6V @ 250µA
16.5 nC @ 10 V
±20V
515 pF @ 50 V
-
27.8W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
PowerPAK® 1212-8
PowerPAK® 1212-8
PowerPAK 1212-8S
SISS71DN-T1-GE3
MOSFET P-CH 100V 23A PPAK1212-8S
Vishay Siliconix
0
In Stock
Check Lead Time
1 : ¥8.78000
Cut Tape (CT)
3,000 : ¥3.62189
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
100 V
23A (Tc)
4.5V, 10V
59mOhm @ 5A, 10V
2.5V @ 250µA
15 nC @ 4.5 V
±20V
1050 pF @ 50 V
-
57W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
PowerPAK® 1212-8S
PowerPAK® 1212-8S
SOT-23-3
SI2392ADS-T1-GE3
MOSFET N-CH 100V 3.1A SOT23-3
Vishay Siliconix
0
In Stock
Check Lead Time
1 : ¥4.27000
Cut Tape (CT)
3,000 : ¥1.43710
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
100 V
3.1A (Tc)
4.5V, 10V
126mOhm @ 2A, 10V
3V @ 250µA
10.4 nC @ 10 V
±20V
196 pF @ 50 V
-
1.25W (Ta), 2.5W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
SOT-23-3 (TO-236)
TO-236-3, SC-59, SOT-23-3
Showing
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Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.