Single FETs, MOSFETs

Results: 9
Manufacturer
Infineon TechnologiesNexperia USA Inc.onsemiSTMicroelectronicsVishay Siliconix
Series
HEXFET®QFET®STripFET™STripFET™ IIThunderFET®TrenchFET®TrenchMOS™
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Product Status
ActiveObsolete
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
55 V60 V75 V100 V200 V
Current - Continuous Drain (Id) @ 25°C
1A (Tc)17A (Tc)22.5A (Tc)50A (Tc)56A (Tc)60A (Tc)75A (Tc)80A (Tc)131A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4V, 10V4.5V, 10V7.5V, 10V10V
Rds On (Max) @ Id, Vgs
5.6mOhm @ 30A, 10V8.5mOhm @ 32A, 10V9mOhm @ 46A, 10V12mOhm @ 25A, 10V15mOhm @ 30A, 10V15.5mOhm @ 17A, 10V50mOhm @ 10A, 10V65mOhm @ 10A, 10V1.05Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id
2V @ 250µA2.5V @ 250µA3.5V @ 250µA4V @ 100µA4V @ 1mA4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
8.2 nC @ 10 V15 nC @ 5 V27 nC @ 10 V35 nC @ 10 V45 nC @ 10 V56 nC @ 5 V81 nC @ 10 V84 nC @ 10 V150 nC @ 10 V
Vgs (Max)
±15V±16V±20V±30V
Input Capacitance (Ciss) (Max) @ Vds
250 pF @ 25 V480 pF @ 25 V1300 pF @ 25 V1950 pF @ 25 V2200 pF @ 25 V2453 pF @ 25 V3070 pF @ 50 V3330 pF @ 50 V5910 pF @ 25 V
Power Dissipation (Max)
2W (Tc)45W (Tc)68W (Tc)100W (Tc)110W (Tc)136W (Tc)140W (Tc)167W (Tc)375W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)-55°C ~ 185°C (TJ)
Supplier Device Package
DPAKPowerPAK® SO-8SOT-223-4TO-252AATO-252AA (DPAK)TO-263 (D2PAK)
Package / Case
PowerPAK® SO-8TO-252-3, DPAK (2 Leads + Tab), SC-63TO-261-4, TO-261AATO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Stocking Options
Environmental Options
Media
Marketplace Product
9Results

Showing
of 9
Compare
Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Grade
Qualification
Mounting Type
Supplier Device Package
Package / Case
TO252-3
IRLR024NTRPBF
MOSFET N-CH 55V 17A DPAK
Infineon Technologies
62,611
In Stock
1 : ¥6.98000
Cut Tape (CT)
2,000 : ¥2.66330
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
55 V
17A (Tc)
4V, 10V
65mOhm @ 10A, 10V
2V @ 250µA
15 nC @ 5 V
±16V
480 pF @ 25 V
-
45W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
TO-252AA (DPAK)
TO-252-3, DPAK (2 Leads + Tab), SC-63
PowerPAK SO-8
SQJA20EP-T1_GE3
MOSFET N-CH 200V 22.5A PPAK SO-8
Vishay Siliconix
2,393
In Stock
1 : ¥11.58000
Cut Tape (CT)
3,000 : ¥4.79335
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
200 V
22.5A (Tc)
7.5V, 10V
50mOhm @ 10A, 10V
3.5V @ 250µA
27 nC @ 10 V
±20V
1300 pF @ 25 V
-
68W (Tc)
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Surface Mount
PowerPAK® SO-8
PowerPAK® SO-8
TO252-3
IRFR3607TRPBF
MOSFET N-CH 75V 56A DPAK
Infineon Technologies
16,403
In Stock
1 : ¥13.55000
Cut Tape (CT)
2,000 : ¥6.11077
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
75 V
56A (Tc)
10V
9mOhm @ 46A, 10V
4V @ 100µA
84 nC @ 10 V
±20V
3070 pF @ 50 V
-
140W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
TO-252AA (DPAK)
TO-252-3, DPAK (2 Leads + Tab), SC-63
MFG_DPAK(TO252-3)
STD65N55F3
MOSFET N-CH 55V 80A DPAK
STMicroelectronics
2,500
In Stock
1 : ¥18.96000
Cut Tape (CT)
2,500 : ¥8.53806
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
55 V
80A (Tc)
10V
8.5mOhm @ 32A, 10V
4V @ 250µA
45 nC @ 10 V
±20V
2200 pF @ 25 V
-
110W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
DPAK
TO-252-3, DPAK (2 Leads + Tab), SC-63
TO-252
SQD50P06-15L_GE3
MOSFET P-CH 60V 50A TO252
Vishay Siliconix
4,876
In Stock
1 : ¥22.99000
Cut Tape (CT)
2,000 : ¥11.17790
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
60 V
50A (Tc)
4.5V, 10V
15.5mOhm @ 17A, 10V
2.5V @ 250µA
150 nC @ 10 V
±20V
5910 pF @ 25 V
-
136W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
TO-252AA
TO-252-3, DPAK (2 Leads + Tab), SC-63
MFG_DPAK(TO252-3)
STD60NF55LT4
MOSFET N-CH 55V 60A DPAK
STMicroelectronics
5,161
In Stock
1 : ¥13.46000
Cut Tape (CT)
2,500 : ¥6.06554
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
55 V
60A (Tc)
4.5V, 10V
15mOhm @ 30A, 10V
2V @ 250µA
56 nC @ 5 V
±15V
1950 pF @ 25 V
-
100W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
DPAK
TO-252-3, DPAK (2 Leads + Tab), SC-63
TO-263 (D2Pak)
SUM70060E-GE3
MOSFET N-CH 100V 131A TO263
Vishay Siliconix
629
In Stock
1 : ¥16.42000
Cut Tape (CT)
800 : ¥9.18041
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Active
N-Channel
MOSFET (Metal Oxide)
100 V
131A (Tc)
7.5V, 10V
5.6mOhm @ 30A, 10V
4V @ 250µA
81 nC @ 10 V
±20V
3330 pF @ 50 V
-
375W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
TO-263 (D2PAK)
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
DPAK SOT428
BUK7212-55B,118
MOSFET N-CH 55V 75A DPAK
Nexperia USA Inc.
4,680
In Stock
1 : ¥13.55000
Cut Tape (CT)
2,500 : ¥5.61846
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Obsolete
N-Channel
MOSFET (Metal Oxide)
55 V
75A (Tc)
10V
12mOhm @ 25A, 10V
4V @ 1mA
35 nC @ 10 V
±20V
2453 pF @ 25 V
-
167W (Tc)
-55°C ~ 185°C (TJ)
Automotive
AEC-Q101
Surface Mount
DPAK
TO-252-3, DPAK (2 Leads + Tab), SC-63
SOT223-3L
FQT5P10TF
MOSFET P-CH 100V 1A SOT223-4
onsemi
0
In Stock
Check Lead Time
1 : ¥6.16000
Cut Tape (CT)
4,000 : ¥2.33719
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
100 V
1A (Tc)
10V
1.05Ohm @ 500mA, 10V
4V @ 250µA
8.2 nC @ 10 V
±30V
250 pF @ 25 V
-
2W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
SOT-223-4
TO-261-4, TO-261AA
Showing
of 9

Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.