Single FETs, MOSFETs

Results: 4
Manufacturer
Diodes IncorporatedEPCNexperia USA Inc.onsemi
Series
-eGaN®
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
FET Type
N-ChannelP-Channel
Technology
GaNFET (Gallium Nitride)MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
40 V60 V80 V
Current - Continuous Drain (Id) @ 25°C
1.1A (Ta)3.5A (Ta)8.2A (Ta)25A (Tc)
Rds On (Max) @ Id, Vgs
11mOhm @ 11A, 5V20mOhm @ 10A, 10V110mOhm @ 4.5A, 10V230mOhm @ 3A, 10V
Vgs(th) (Max) @ Id
2.2V @ 1mA2.5V @ 2.5mA2.5V @ 250µA3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
4.3 nC @ 5 V4.3 nC @ 10 V12.6 nC @ 10 V17.2 nC @ 10 V
Vgs (Max)
+6V, -4V+16V, -10V±20V
Input Capacitance (Ciss) (Max) @ Vds
240 pF @ 25 V576 pF @ 50 V763 pF @ 25 V969 pF @ 30 V
Power Dissipation (Max)
470mW (Ta)760mW (Ta)38W (Tc)-
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)-40°C ~ 150°C (TJ)
Supplier Device Package
DieLFPAK33SOT-23-3 (TO-236)U-DFN2020-6 (Type F)
Package / Case
6-UDFN Exposed PadDieSOT-1210, 8-LFPAK33 (5-Lead)TO-236-3, SC-59, SOT-23-3
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Grade
Qualification
Mounting Type
Supplier Device Package
Package / Case
EPC2252
EPC2252
TRANSGAN 80V.011OHM AECQ101 9BGA
EPC
30,000
In Stock
1 : ¥14.70000
Cut Tape (CT)
2,500 : ¥6.61694
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
GaNFET (Gallium Nitride)
80 V
8.2A (Ta)
-
11mOhm @ 11A, 5V
2.5V @ 2.5mA
4.3 nC @ 5 V
+6V, -4V
576 pF @ 50 V
-
-
-40°C ~ 150°C (TJ)
-
-
Surface Mount
Die
Die
SOT 23-3
NVR5124PLT1G
MOSFET P-CH 60V 1.1A SOT23-3
onsemi
8,411
In Stock
1 : ¥3.69000
Cut Tape (CT)
3,000 : ¥1.24997
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
60 V
1.1A (Ta)
4.5V, 10V
230mOhm @ 3A, 10V
2.5V @ 250µA
4.3 nC @ 10 V
±20V
240 pF @ 25 V
-
470mW (Ta)
-55°C ~ 150°C (TJ)
Automotive
AEC-Q101
Surface Mount
SOT-23-3 (TO-236)
TO-236-3, SC-59, SOT-23-3
LFPAK33
BUK9M20-40HX
MOSFET N-CH 40V 25A LFPAK33
Nexperia USA Inc.
8,093
In Stock
1 : ¥5.42000
Cut Tape (CT)
1,500 : ¥2.31637
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
40 V
25A (Tc)
4.5V, 10V
20mOhm @ 10A, 10V
2.2V @ 1mA
12.6 nC @ 10 V
+16V, -10V
763 pF @ 25 V
-
38W (Tc)
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Surface Mount
LFPAK33
SOT-1210, 8-LFPAK33 (5-Lead)
U-DFN2020-6 Type F
DMP6110SFDFQ-7
MOSFET P-CH 60V 3.5A 6UDFN
Diodes Incorporated
2,772
In Stock
1 : ¥4.76000
Cut Tape (CT)
3,000 : ¥1.61514
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
60 V
3.5A (Ta)
4.5V, 10V
110mOhm @ 4.5A, 10V
3V @ 250µA
17.2 nC @ 10 V
±20V
969 pF @ 30 V
-
760mW (Ta)
-55°C ~ 150°C (TJ)
Automotive
AEC-Q101
Surface Mount
U-DFN2020-6 (Type F)
6-UDFN Exposed Pad
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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.