Single FETs, MOSFETs

Results: 13
Manufacturer
EPCInfineon TechnologiesNexperia USA Inc.STMicroelectronicsTransphorm
Series
-CoolGaN™CoolMOS™S7eGaN®SuperGaN®SuperGaN™
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)Tube
Technology
GaNFET (Cascode Gallium Nitride FET)GaNFET (Gallium Nitride)MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V150 V600 V650 V
Current - Continuous Drain (Id) @ 25°C
8.2A (Tc)10.4A (Tc)15A (Tc)23A (Tc)28A31A (Tc)34A (Tc)46.5A (Tc)47.2A (Tc)48A (Ta)58.5A (Tc)93A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
5V6V10V12V-
Rds On (Max) @ Id, Vgs
3.8mOhm @ 25A, 5V7mOhm @ 10A, 5V18mOhm @ 60A, 10V22mOhm @ 23A, 12V39mOhm @ 32A, 10V41mOhm @ 30A, 10V41mOhm @ 32A, 10V60mOhm @ 22A, 10V120mOhm @ 5A, 6V-
Vgs(th) (Max) @ Id
1.6V @ 2.6mA1.6V @ 530µA1.6V @ 690µA2.1V @ 5mA2.5V @ 7mA2.6V @ 12mA4.5V @ 1.44mA4.5V @ 1mA4.6V @ 1mA4.8V @ 1mA4.8V @ 2mA4.8V @ 700µA
Gate Charge (Qg) (Max) @ Vgs
3 nC @ 6 V7.6 nC @ 5 V16.3 nC @ 5 V22 nC @ 0 V22 nC @ 10 V24 nC @ 10 V26 nC @ 10 V100 nC @ 10 V150 nC @ 12 V
Vgs (Max)
-10V+6V, -10V+6V, -4V±20V
Input Capacitance (Ciss) (Max) @ Vds
87.7 pF @ 400 V110 pF @ 400 V125 pF @ 400 V380 pF @ 400 V865 pF @ 85 V1000 pF @ 400 V1500 pF @ 400 V1980 pF @ 400 V2366 pF @ 50 V5218 pF @ 400 V5639 pF @ 300 V
Power Dissipation (Max)
28W41.6W (Tc)52W (Tc)114W (Tc)119W (Tc)125W (Tc)156W (Tc)187W (Tc)192W (Tc)250W (Tc)266W (Tc)390W (Tc)-
Operating Temperature
-55°C ~ 150°C-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)-40°C ~ 150°C (TJ)
Mounting Type
Surface MountThrough Hole
Supplier Device Package
3-FCLGA (3.2x2.2)7-QFN (3x5)CCPAK1212iPG-HSOF-8-3PG-LSON-8-1PG-TO220-3-1PG-TSON-8-7PowerFlat™ (5x6) HVTO-247-3TO-263
Package / Case
3-VLGA7-PowerWQFN8-LDFN Exposed Pad8-PowerSFN8-PowerTDFN8-PowerVDFN12-BESOP (0.370", 9.40mm Width), Exposed PadTO-220-3TO-247-3TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Stocking Options
Environmental Options
Media
Marketplace Product
13Results
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Grade
Qualification
Mounting Type
Supplier Device Package
Package / Case
EPC2306ENGRT
EPC2306ENGRT
TRANS GAN 100V .0038OHM3X5MM QFN
EPC
5,478
In Stock
1 : ¥52.13000
Cut Tape (CT)
3,000 : ¥20.52451
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
GaNFET (Gallium Nitride)
100 V
48A (Ta)
5V
3.8mOhm @ 25A, 5V
2.5V @ 7mA
16.3 nC @ 5 V
+6V, -4V
2366 pF @ 50 V
-
-
-40°C ~ 150°C (TJ)
-
-
Surface Mount
7-QFN (3x5)
7-PowerWQFN
TO-220-3
IPP60R022S7XKSA1
MOSFET N-CH 600V 23A TO220-3
Infineon Technologies
876
In Stock
1 : ¥87.76000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
600 V
23A (Tc)
12V
22mOhm @ 23A, 12V
4.5V @ 1.44mA
150 nC @ 12 V
±20V
5639 pF @ 300 V
-
390W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
PG-TO220-3-1
TO-220-3
2,793
In Stock
1 : ¥94.74000
Cut Tape (CT)
2,000 : ¥55.82667
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
GaNFET (Gallium Nitride)
600 V
31A (Tc)
-
-
1.6V @ 2.6mA
-
-10V
380 pF @ 400 V
-
125W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
PG-HSOF-8-3
8-PowerSFN
TP65H035G4WS
TP65H035G4WS
GANFET N-CH 650V 46.5A TO247-3
Transphorm
773
In Stock
1 : ¥147.28000
Tube
Tube
Active
N-Channel
GaNFET (Cascode Gallium Nitride FET)
650 V
46.5A (Tc)
10V
41mOhm @ 30A, 10V
4.8V @ 1mA
22 nC @ 0 V
±20V
1500 pF @ 400 V
-
156W (Tc)
-55°C ~ 150°C
-
-
Through Hole
TO-247-3
TO-247-3
TP65H015G5WS
TP65H015G5WS
650 V 95 A GAN FET
Transphorm
170
In Stock
1 : ¥264.85000
Tube
Tube
Active
N-Channel
GaNFET (Gallium Nitride)
650 V
93A (Tc)
10V
18mOhm @ 60A, 10V
4.8V @ 2mA
100 nC @ 10 V
±20V
5218 pF @ 400 V
-
266W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
TO-247-3
TO-247-3
GAN7R0-150LBEZ
GAN7R0-150LBEZ
150 V, 7 MOHM GALLIUM NITRIDE (G
Nexperia USA Inc.
3,532
In Stock
1 : ¥25.04000
Cut Tape (CT)
2,500 : ¥10.37884
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
GaNFET (Gallium Nitride)
150 V
28A
5V
7mOhm @ 10A, 5V
2.1V @ 5mA
7.6 nC @ 5 V
+6V, -4V
865 pF @ 85 V
-
28W
-40°C ~ 150°C (TJ)
-
-
Surface Mount
3-FCLGA (3.2x2.2)
3-VLGA
1,477
In Stock
1 : ¥93.02000
Cut Tape (CT)
3,000 : ¥54.80045
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
GaNFET (Gallium Nitride)
600 V
15A (Tc)
-
-
1.6V @ 2.6mA
-
-10V
380 pF @ 400 V
-
114W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
PG-LSON-8-1
8-LDFN Exposed Pad
TP65H050G4BS
TP65H050G4BS
650 V 34 A GAN FET
Transphorm
153
In Stock
1 : ¥102.95000
Tube
Tube
Active
N-Channel
GaNFET (Gallium Nitride)
650 V
34A (Tc)
10V
60mOhm @ 22A, 10V
4.8V @ 700µA
24 nC @ 10 V
±20V
1000 pF @ 400 V
-
119W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
TO-263
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
GAN041-650WSBQ
GAN041-650WSBQ
GAN041-650WSB/SOT429/TO-247
Nexperia USA Inc.
198
In Stock
1 : ¥143.59000
Tube
-
Tube
Active
N-Channel
GaNFET (Cascode Gallium Nitride FET)
650 V
47.2A (Tc)
10V
41mOhm @ 32A, 10V
4.5V @ 1mA
22 nC @ 10 V
±20V
1500 pF @ 400 V
-
187W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
TO-247-3
TO-247-3
4,892
In Stock
1 : ¥35.63000
Cut Tape (CT)
5,000 : ¥16.62485
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
GaNFET (Gallium Nitride)
600 V
8.2A (Tc)
-
-
1.6V @ 530µA
-
-10V
87.7 pF @ 400 V
-
41.6W (Tc)
-40°C ~ 150°C (TJ)
-
-
Surface Mount
PG-TSON-8-7
8-PowerTDFN
4,947
In Stock
1 : ¥46.96000
Cut Tape (CT)
5,000 : ¥17.85632
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
GaNFET (Gallium Nitride)
600 V
10.4A (Tc)
-
-
1.6V @ 690µA
-
-10V
110 pF @ 400 V
-
52W (Tc)
-40°C ~ 150°C (TJ)
-
-
Surface Mount
PG-TSON-8-7
8-PowerTDFN
SGT120R65AL
SGT120R65AL
650 V, 75 MOHM TYP., 15 A, E-MOD
STMicroelectronics
0
In Stock
Check Lead Time
1 : ¥40.64000
Cut Tape (CT)
3,000 : ¥19.78864
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
GaNFET (Gallium Nitride)
650 V
15A (Tc)
6V
120mOhm @ 5A, 6V
2.6V @ 12mA
3 nC @ 6 V
+6V, -10V
125 pF @ 400 V
-
192W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
PowerFlat™ (5x6) HV
8-PowerVDFN
GAN039-650NTBZ
GAN039-650NTBZ
650 V, 33 MOHM GALLIUM NITRIDE (
Nexperia USA Inc.
0
In Stock
Check Lead Time
1 : ¥97.70000
Cut Tape (CT)
1,000 : ¥61.84979
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
GaNFET (Gallium Nitride)
650 V
58.5A (Tc)
10V
39mOhm @ 32A, 10V
4.6V @ 1mA
26 nC @ 10 V
±20V
1980 pF @ 400 V
-
250W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
CCPAK1212i
12-BESOP (0.370", 9.40mm Width), Exposed Pad
Showing
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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.