Single FETs, MOSFETs

Results: 4
Manufacturer
Diodes IncorporatedonsemiVishay Siliconix
Series
-TrenchFET®
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
30 V200 V600 V
Current - Continuous Drain (Id) @ 25°C
50mA (Ta)1.5A (Ta)7.5A (Ta)12A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V5V, 10V
Rds On (Max) @ Id, Vgs
24mOhm @ 7.8A, 10V30mOhm @ 7.5A, 10V750mOhm @ 2.75A, 10V160Ohm @ 16mA, 10V
Vgs(th) (Max) @ Id
2.5V @ 250µA3V @ 250µA4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
1.08 nC @ 10 V8.1 nC @ 5 V12 nC @ 10 V67 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
21.8 pF @ 25 V358 pF @ 25 V435 pF @ 15 V1440 pF @ 15 V
Power Dissipation (Max)
610mW (Ta)2.2W (Ta)3W (Ta)3.2W (Ta), 15.6W (Tc)
Operating Temperature
-65°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)
Supplier Device Package
PowerPAK® 1212-8SOT-223-4SOT-23-3TO-252-3
Package / Case
PowerPAK® 1212-8TO-236-3, SC-59, SOT-23-3TO-252-3, DPAK (2 Leads + Tab), SC-63TO-261-4, TO-261AA
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
PowerPAK 1212-8
SIS412DN-T1-GE3
MOSFET N-CH 30V 12A PPAK1212-8
Vishay Siliconix
54,402
In Stock
1 : ¥4.68000
Cut Tape (CT)
3,000 : ¥1.77239
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
30 V
12A (Tc)
4.5V, 10V
24mOhm @ 7.8A, 10V
2.5V @ 250µA
12 nC @ 10 V
±20V
435 pF @ 15 V
-
3.2W (Ta), 15.6W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK® 1212-8
PowerPAK® 1212-8
SOT223-3L
NDT456P
MOSFET P-CH 30V 7.5A SOT-223-4
onsemi
7,677
In Stock
1 : ¥15.76000
Cut Tape (CT)
4,000 : ¥7.08884
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
30 V
7.5A (Ta)
4.5V, 10V
30mOhm @ 7.5A, 10V
3V @ 250µA
67 nC @ 10 V
±20V
1440 pF @ 15 V
-
3W (Ta)
-65°C ~ 150°C (TJ)
Surface Mount
SOT-223-4
TO-261-4, TO-261AA
SOT-23-3
BSS127S-7
MOSFET N-CH 600V 50MA SOT23
Diodes Incorporated
183,207
In Stock
1 : ¥2.46000
Cut Tape (CT)
3,000 : ¥0.54779
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
600 V
50mA (Ta)
5V, 10V
160Ohm @ 16mA, 10V
4.5V @ 250µA
1.08 nC @ 10 V
±20V
21.8 pF @ 25 V
-
610mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3
TO-252-2
ZXMN20B28KTC
MOSFET N-CH 200V 1.5A TO252-3
Diodes Incorporated
4,695
In Stock
1 : ¥5.99000
Cut Tape (CT)
2,500 : ¥2.28725
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
200 V
1.5A (Ta)
5V, 10V
750mOhm @ 2.75A, 10V
2.5V @ 250µA
8.1 nC @ 5 V
±20V
358 pF @ 25 V
-
2.2W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
TO-252-3
TO-252-3, DPAK (2 Leads + Tab), SC-63
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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.