Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package	Package / Case

DMP21D6UFD-7 MOSFET P-CH 20V 600MA 3DFN Diodes Incorporated	19,062 In Stock 1,605,000 Factory	1 : ¥1.97000 Cut Tape (CT) 3,000 : ¥0.34853 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	20 V	600mA (Ta)	1.2V, 4.5V	1Ohm @ 100mA, 4.5V	1V @ 250µA	0.8 nC @ 8 V	±8V	46.1 pF @ 10 V	-	400mW	-55°C ~ 150°C (TJ)	-	-	Surface Mount	X1-DFN1212-3	3-UDFN
DMN62D1LFD-7 MOSFET N-CH 60V 400MA 3DFN Diodes Incorporated	23,907 In Stock	1 : ¥3.45000 Cut Tape (CT) 3,000 : ¥0.61806 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	60 V	400mA (Ta)	1.8V, 4V	2Ohm @ 100mA, 4V	1V @ 250µA	0.55 nC @ 4.5 V	±20V	36 pF @ 25 V	-	500mW (Ta)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	X1-DFN1212-3	3-UDFN
DMT6030LFCL-7 MOSFET BVDSS: 41V~60V X1-DFN1616 Diodes Incorporated	3,386 In Stock 6,000 Factory	1 : ¥4.02000 Cut Tape (CT) 3,000 : ¥1.08159 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	60 V	6.5A (Ta)	4.5V, 10V	25mOhm @ 6.5A, 10V	2.5V @ 250µA	9.1 nC @ 10 V	±20V	639 pF @ 30 V	-	780mW (Ta)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	U-DFN1616-6 (Type K)	6-PowerUFDFN

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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.