Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case

IRF9640PBF MOSFET P-CH 200V 11A TO220AB Vishay Siliconix	26,139 In Stock	1 : ¥11.33000 Tube	-	Tube	Active	P-Channel	MOSFET (Metal Oxide)	200 V	11A (Tc)	10V	500mOhm @ 6.6A, 10V	4V @ 250µA	44 nC @ 10 V	±20V	1200 pF @ 25 V	-	125W (Tc)	-55°C ~ 150°C (TJ)	Through Hole	TO-220AB	TO-220-3
IRF9540PBF MOSFET P-CH 100V 19A TO220AB Vishay Siliconix	3,034 In Stock	1 : ¥16.99000 Tube	-	Tube	Active	P-Channel	MOSFET (Metal Oxide)	100 V	19A (Tc)	10V	200mOhm @ 11A, 10V	4V @ 250µA	61 nC @ 10 V	±20V	1400 pF @ 25 V	-	150W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
IRF640PBF MOSFET N-CH 200V 18A TO220AB Vishay Siliconix	2,150 In Stock	1 : ¥15.68000 Bulk	-	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	200 V	18A (Tc)	10V	180mOhm @ 11A, 10V	4V @ 250µA	70 nC @ 10 V	±20V	1300 pF @ 25 V	-	125W (Tc)	-55°C ~ 150°C (TJ)	Through Hole	TO-220AB	TO-220-3
IRFD9120PBF MOSFET P-CH 100V 1A 4DIP Vishay Siliconix	46,099 In Stock	1 : ¥12.40000 Tube	-	Tube	Last Time Buy	P-Channel	MOSFET (Metal Oxide)	100 V	1A (Ta)	10V	600mOhm @ 600mA, 10V	4V @ 250µA	18 nC @ 10 V	±20V	390 pF @ 25 V	-	1.3W (Ta)	-55°C ~ 175°C (TJ)	Through Hole	4-HVMDIP	4-DIP (0.300", 7.62mm)
IRFD110PBF MOSFET N-CH 100V 1A 4DIP Vishay Siliconix	10,154 In Stock	1 : ¥13.30000 Tube	-	Tube	Last Time Buy	N-Channel	MOSFET (Metal Oxide)	100 V	1A (Ta)	10V	540mOhm @ 600mA, 10V	4V @ 250µA	8.3 nC @ 10 V	±20V	180 pF @ 25 V	-	1.3W (Ta)	-55°C ~ 175°C (TJ)	Through Hole	4-HVMDIP	4-DIP (0.300", 7.62mm)
IRFD120PBF MOSFET N-CH 100V 1.3A 4DIP Vishay Siliconix	0 In Stock	1 : ¥10.92000 Bulk	-	Bulk	Last Time Buy	N-Channel	MOSFET (Metal Oxide)	100 V	1.3A (Ta)	10V	270mOhm @ 780mA, 10V	4V @ 250µA	16 nC @ 10 V	±20V	360 pF @ 25 V	-	1.3W (Ta)	-55°C ~ 175°C (TJ)	Through Hole	4-HVMDIP	4-DIP (0.300", 7.62mm)

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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.