Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case

C2M1000170D SICFET N-CH 1700V 4.9A TO247-3 Wolfspeed, Inc.	2,575 In Stock	1 : ¥93.35000 Tube	Z-FET™	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1700 V	4.9A (Tc)	20V	1.1Ohm @ 2A, 20V	4V @ 500µA	13 nC @ 20 V	+25V, -10V	191 pF @ 1000 V	-	69W (Tc)	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247-3
C2M0160120D SICFET N-CH 1200V 19A TO247-3 Wolfspeed, Inc.	1,413 In Stock	1 : ¥130.62000 Tube	Z-FET™	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	19A (Tc)	20V	196mOhm @ 10A, 20V	2.5V @ 500µA	32.6 nC @ 20 V	+25V, -10V	527 pF @ 800 V	-	125W (Tc)	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247-3
C2M0080120D SICFET N-CH 1200V 36A TO247-3 Wolfspeed, Inc.	1,554 In Stock	1 : ¥240.05000 Bulk	C2M™	Bulk	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	36A (Tc)	20V	98mOhm @ 20A, 20V	4V @ 5mA	62 nC @ 5 V	+25V, -10V	950 pF @ 1000 V	-	192W (Tc)	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247-3

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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.