Single Bipolar Transistors

Results: 3
Manufacturer
ANBON SEMICONDUCTOR (INT'L) LIMITEDNexperia USA Inc.Rohm Semiconductor
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Current - Collector (Ic) (Max)
200 mA500 mA5 A
Voltage - Collector Emitter Breakdown (Max)
40 V50 V
Vce Saturation (Max) @ Ib, Ic
300mV @ 5mA, 50mA355mV @ 500mA, 5A400mV @ 15mA, 150mA
Current - Collector Cutoff (Max)
50nA100nA (ICBO)500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 10mA, 1V120 @ 10mA, 3V250 @ 2A, 2V
Power - Max
200 mW300 mW2 W
Frequency - Transition
130MHz250MHz
Operating Temperature
-55°C ~ 150°C (TJ)150°C (TJ)
Package / Case
SC-70, SOT-323TO-236-3, SC-59, SOT-23-3TO-261-4, TO-261AA
Supplier Device Package
SOT-223SOT-23UMT3
Stocking Options
Environmental Options
Media
Marketplace Product
3Results

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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
Transistor Type
Current - Collector (Ic) (Max)
Voltage - Collector Emitter Breakdown (Max)
Vce Saturation (Max) @ Ib, Ic
Current - Collector Cutoff (Max)
DC Current Gain (hFE) (Min) @ Ic, Vce
Power - Max
Frequency - Transition
Operating Temperature
Grade
Qualification
Mounting Type
Package / Case
Supplier Device Package
SOT223
PBSS4540Z,115
TRANS NPN 40V 5A SOT223
Nexperia USA Inc.
24,962
In Stock
1 : ¥3.37000
Cut Tape (CT)
1,000 : ¥0.97278
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
NPN
5 A
40 V
355mV @ 500mA, 5A
100nA (ICBO)
250 @ 2A, 2V
2 W
130MHz
150°C (TJ)
Automotive
AEC-Q100
Surface Mount
TO-261-4, TO-261AA
SOT-223
UMT3
2SD1949T106Q
TRANS NPN 50V 0.5A UMT3
Rohm Semiconductor
8,824
In Stock
1 : ¥3.04000
Cut Tape (CT)
3,000 : ¥0.83050
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
NPN
500 mA
50 V
400mV @ 15mA, 150mA
500nA (ICBO)
120 @ 10mA, 3V
200 mW
250MHz
150°C (TJ)
-
-
Surface Mount
SC-70, SOT-323
UMT3
MMBT3904
MMBT3904
200MA SILICON NPN EPITAXIAL PLAN
ANBON SEMICONDUCTOR (INT'L) LIMITED
218,086
In Stock
1 : ¥0.82000
Cut Tape (CT)
3,000 : ¥0.09272
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
NPN
200 mA
40 V
300mV @ 5mA, 50mA
50nA
100 @ 10mA, 1V
300 mW
250MHz
-55°C ~ 150°C (TJ)
-
-
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23
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Single Bipolar Transistors


Discrete Bipolar Junction Transistors (BJTs) are commonly used to construct analog signal amplification functions in audio, radio, and other applications. One of the first semiconductor devices to be mass produced, their characteristics are less favorable than those of other device types for applications involving high frequency switching and operation with high currents or voltages, but they remain a technology of choice for applications requiring analog signal reproduction with minimal added noise and distortion.