RF FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	Technology	Frequency	Gain	Voltage - Test	Current Rating (Amps)	Noise Figure	Current - Test	Power - Output	Voltage - Rated	Package / Case	Supplier Device Package

PD55015-E RF MOSFET LDMOS 12.5V PWRSO-10RF STMicroelectronics	737 In Stock	1 : ¥174.29000 Tube	-	Tube	Active	LDMOS	500MHz	14dB	12.5 V	5A	-	150 mA	15W	40 V	PowerSO-10RF Exposed Bottom Pad (2 Formed Leads)	PowerSO-10RF (Formed Lead)
PD54008-E RF MOSFET LDMOS 7.5V POWERSO10 STMicroelectronics	400 In Stock	1 : ¥122.24000 Tube	-	Tube	Active	LDMOS	500MHz	11.5dB	7.5 V	5A	-	150 mA	8W	25 V	PowerSO-10 Exposed Bottom Pad	10-PowerSO
PD55015TR-E RF MOSFET LDMOS 12.5V PWRSO-10RF STMicroelectronics	1,200 In Stock	1 : ¥174.29000 Cut Tape (CT) 600 : ¥124.61238 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	LDMOS	500MHz	14dB	12.5 V	5A	-	150 mA	15W	40 V	PowerSO-10RF Exposed Bottom Pad (2 Formed Leads)	PowerSO-10RF (Formed Lead)
PD55003-E RF MOSFET LDMOS 12.5V POWERSO10 STMicroelectronics	0 In Stock Check Lead Time	1 : ¥97.94000 Tube	-	Tube	Active	LDMOS	500MHz	17dB	12.5 V	2.5A	-	50 mA	3W	40 V	PowerSO-10 Exposed Bottom Pad	10-PowerSO
PD55003TR-E RF MOSFET LDMOS 12.5V POWERSO10 STMicroelectronics	0 In Stock Check Lead Time	1 : ¥97.94000 Cut Tape (CT) 600 : ¥63.76103 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	LDMOS	500MHz	17dB	12.5 V	2.5A	-	50 mA	3W	40 V	PowerSO-10 Exposed Bottom Pad	10-PowerSO

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RF FETs, MOSFETs

RF Transistors, FETs, and MOSFETs are a semiconductor device with three terminals where the current flowing through the device is controlled by an electric field. The devices in this family are designed be used in equipment involving radio frequencies. The transistor types for amplifying or switching the signal or power include E-pHEMT, LDMOS, MESFET, N-channel, P-channel, pHEMT, silicon carbide, 2 N-channel, and 4 N-channel.