Gate Drivers

Results: 2
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Driven Configuration
Half-BridgeHigh-Side or Low-Side
Channel Type
3-PhaseIndependent
Number of Drivers
26
Voltage - Supply
10V ~ 20V14V ~ 18V
Logic Voltage - VIL, VIH
0.7V, 2.3V0.8V, 2V
Current - Peak Output (Source, Sink)
350mA, 650mA1A, 2A
Rise / Fall Time (Typ)
20ns, 20ns35ns, 20ns
Operating Temperature
-40°C ~ 125°C (TA)-40°C ~ 150°C (TJ)
Package / Case
18-SOIC (0.295", 7.50mm Width)28-SOIC (0.295", 7.50mm Width), 24 Leads
Supplier Device Package
PG-DSO-18-2PG-DSO-24
Stocking Options
Environmental Options
Media
Marketplace Product
2Results
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
DigiKey Programmable
Driven Configuration
Channel Type
Number of Drivers
Gate Type
Voltage - Supply
Logic Voltage - VIL, VIH
Current - Peak Output (Source, Sink)
Input Type
High Side Voltage - Max (Bootstrap)
Rise / Fall Time (Typ)
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
2ED020I12FIXUMA1
2ED020I12FIXUMA1
IC GATE DRVR HALF-BRIDGE DSO18-2
Infineon Technologies
8,243
In Stock
1 : ¥25.93000
Cut Tape (CT)
1,000 : ¥13.69697
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
Not Verified
Half-Bridge
Independent
2
IGBT, N-Channel MOSFET
14V ~ 18V
0.8V, 2V
1A, 2A
Inverting
1200 V
20ns, 20ns
-40°C ~ 150°C (TJ)
Surface Mount
18-SOIC (0.295", 7.50mm Width)
PG-DSO-18-2
6EXXXXXXXXXXDA1
6ED2230S12TXUMA1
IC GATE DRVR HI/LOW SIDE 28SOIC
Infineon Technologies
0
In Stock
Check Lead Time
1 : ¥93.59000
Cut Tape (CT)
1,000 : ¥45.20446
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
Not Verified
High-Side or Low-Side
3-Phase
6
IGBT, N-Channel MOSFET
10V ~ 20V
0.7V, 2.3V
350mA, 650mA
Inverting
1200 V
35ns, 20ns
-40°C ~ 125°C (TA)
Surface Mount
28-SOIC (0.295", 7.50mm Width), 24 Leads
PG-DSO-24
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Gate Drivers

Gate driver Power Management Integrated Circuits (PMICs) are devices that provide isolation, amplification, reference shifting, bootstrapping, or other functions necessary to interface signals from a control device in a power conversion application to the semiconductor devices (usually FETs or IGBTs) through which the power being controlled passes. The exact functions offered by any particular device vary, but correlate with the semiconductor configuration it is adapted to drive.