FET, MOSFET Arrays

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	Technology	Configuration	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power - Max	Operating Temperature	Grade	Qualification	Mounting Type	Package / Case	Supplier Device Package

IAUC45N04S6N070HATMA1 MOSFET 2N-CH 40V 45A 8TDSON Infineon Technologies	13,035 In Stock	1 : ¥11.17000 Cut Tape (CT) 5,000 : ¥4.39371 Tape & Reel (TR)	OptiMOS™	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	MOSFET (Metal Oxide)	2 N-Channel (Half Bridge)	-	40V	45A (Tj)	7mOhm @ 22A, 10V	3V @ 9µA	12nC @ 10V	701pF @ 25V	41W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Surface Mount	8-PowerVDFN	PG-TDSON-8-57
IAUC60N04S6N031HATMA1 MOSFET 2N-CH 40V 60A 8TDSON Infineon Technologies	11,925 In Stock	1 : ¥14.94000 Cut Tape (CT) 5,000 : ¥6.48918 Tape & Reel (TR)	OptiMOS™	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	MOSFET (Metal Oxide)	2 N-Channel (Half Bridge)	-	40V	60A (Tj)	3.1mOhm @ 30A, 10V	3V @ 25µA	30nC @ 10V	1922pF @ 25V	75W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Surface Mount	8-PowerVDFN	PG-TDSON-8-56
IAUC60N04S6L045HATMA1 MOSFET 2N-CH 40V 60A 8TDSON Infineon Technologies	29,218 In Stock	1 : ¥13.46000 Cut Tape (CT) 5,000 : ¥5.04391 Tape & Reel (TR)	OptiMOS™	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	MOSFET (Metal Oxide)	2 N-Channel (Half Bridge)	Logic Level Gate	40V	60A (Tj)	4.5mOhm @ 30A, 10V	2V @ 13µA	19nC @ 10V	1136pF @ 25V	52W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Surface Mount	8-PowerVDFN	PG-TDSON-8-57
PSMN013-40VLDX MOSFET 2N-CH 40V 42A LFPAK56D Nexperia USA Inc.	5,970 In Stock	1 : ¥10.84000 Cut Tape (CT) 1,500 : ¥4.18700 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	MOSFET (Metal Oxide)	2 N-Channel (Half Bridge)	-	40V	42A (Ta)	13.6mOhm @ 10A, 10V	2.2V @ 1mA	19.4nC @ 10V	1160pF @ 25V	46W (Ta)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	SOT-1205, 8-LFPAK56	LFPAK56D

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FET, MOSFET Arrays

Field-effect transistors (FET) are electronic devices which use an electric field to control the flow of current. Application of a voltage to the gate terminal alters the conductivity between the drain and source terminals. FETs are also known as unipolar transistors since they involve single-carrier-type operation. That is, FETs use electrons or holes as charge carriers in their operation, but not both. Field effect transistors generally display very high input impedance at low frequencies.