FET, MOSFET Arrays

Results: 2
Manufacturer
Diodes IncorporatedInfineon Technologies
Series
-OptiMOS™
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Configuration
2 N-Channel (Half Bridge)4 N-Channel (Full Bridge)
Drain to Source Voltage (Vdss)
40V60V
Current - Continuous Drain (Id) @ 25°C
14.8A (Ta)60A (Tj)
Rds On (Max) @ Id, Vgs
3.1mOhm @ 30A, 10V22mOhm @ 10A, 10V
Vgs(th) (Max) @ Id
3V @ 250µA3V @ 25µA
Gate Charge (Qg) (Max) @ Vgs
8.4nC @ 4.5V30nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds
864pF @ 30V1922pF @ 25V
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)
Package / Case
8-PowerVDFN12-VDFN Exposed Pad
Supplier Device Package
PG-TDSON-8-56V-DFN5045-12
Stocking Options
Environmental Options
Media
Marketplace Product
2Results

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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
Technology
Configuration
FET Feature
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Power - Max
Operating Temperature
Grade
Qualification
Mounting Type
Package / Case
Supplier Device Package
11,925
In Stock
1 : ¥14.94000
Cut Tape (CT)
5,000 : ¥6.48918
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
MOSFET (Metal Oxide)
2 N-Channel (Half Bridge)
-
40V
60A (Tj)
3.1mOhm @ 30A, 10V
3V @ 25µA
30nC @ 10V
1922pF @ 25V
75W (Tc)
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Surface Mount
8-PowerVDFN
PG-TDSON-8-56
V-DFN5045-12
DMHT6016LFJ-13
MOSFET 4N-CH 60V 14.8A 12VDFN
Diodes Incorporated
12,094
In Stock
1 : ¥12.73000
Cut Tape (CT)
3,000 : ¥5.72163
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
MOSFET (Metal Oxide)
4 N-Channel (Full Bridge)
-
60V
14.8A (Ta)
22mOhm @ 10A, 10V
3V @ 250µA
8.4nC @ 4.5V
864pF @ 30V
-
-55°C ~ 150°C (TJ)
-
-
Surface Mount
12-VDFN Exposed Pad
V-DFN5045-12
Showing
of 2

FET, MOSFET Arrays


Field-effect transistors (FET) are electronic devices which use an electric field to control the flow of current. Application of a voltage to the gate terminal alters the conductivity between the drain and source terminals. FETs are also known as unipolar transistors since they involve single-carrier-type operation. That is, FETs use electrons or holes as charge carriers in their operation, but not both. Field effect transistors generally display very high input impedance at low frequencies.