FET, MOSFET Arrays

Results: 5
Manufacturer
onsemiRohm SemiconductorTexas InstrumentsToshiba Semiconductor and StorageVishay Siliconix
Series
-NexFET™PowerTrench®TrenchFET® Gen V
Packaging
BulkCut Tape (CT)Digi-Reel®Tape & Reel (TR)
Product Status
ActiveObsolete
Configuration
2 N-Channel (Dual)2 N-Channel (Dual) Common Source
FET Feature
-Logic Level GateLogic Level Gate, 1.2V DriveLogic Level Gate, 5V Drive
Drain to Source Voltage (Vdss)
20V30V100V
Current - Continuous Drain (Id) @ 25°C
250mA (Ta)2A10A35A (Ta), 125A (Tc)39A
Rds On (Max) @ Id, Vgs
2.43mOhm @ 10A, 10V10.5mOhm @ 10A, 10V12.4mOhm @ 10A, 8V100mOhm @ 2A, 4.5V1.1Ohm @ 150mA, 4.5V
Vgs(th) (Max) @ Id
1V @ 100µA1.4V @ 250µA1.5V @ 1mA2V @ 250µA4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
0.34nC @ 4.5V3.9nC @ 4.5V15.2nC @ 4.5V30nC @ 10V32nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds
36pF @ 10V175pF @ 10V1480pF @ 15V2060pF @ 50V2390pF @ 10V
Power - Max
250mW1.25W2.2W2.5W4.5W (Ta), 56.8W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)150°C150°C (TJ)
Package / Case
8-PowerVDFN8-PowerWDFN12-PowerPair™SOT-23-5 Thin, TSOT-23-5SOT-563, SOT-666
Supplier Device Package
8-Power 5x68-VSON (3.3x3.3)ES6PowerPAIR® 3x3FSTSMT5
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
Technology
Configuration
FET Feature
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Power - Max
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
79,355
In Stock
1 : ¥2.71000
Cut Tape (CT)
4,000 : ¥0.54659
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
MOSFET (Metal Oxide)
2 N-Channel (Dual)
Logic Level Gate, 1.2V Drive
20V
250mA (Ta)
1.1Ohm @ 150mA, 4.5V
1V @ 100µA
0.34nC @ 4.5V
36pF @ 10V
250mW
150°C
Surface Mount
SOT-563, SOT-666
ES6
TSMT5 Pkg
QS5K2TR
MOSFET 2N-CH 30V 2A TSMT5
Rohm Semiconductor
151,703
In Stock
1 : ¥4.68000
Cut Tape (CT)
3,000 : ¥1.77232
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
MOSFET (Metal Oxide)
2 N-Channel (Dual) Common Source
Logic Level Gate
30V
2A
100mOhm @ 2A, 4.5V
1.5V @ 1mA
3.9nC @ 4.5V
175pF @ 10V
1.25W
150°C (TJ)
Surface Mount
SOT-23-5 Thin, TSOT-23-5
TSMT5
8-SON
CSD85312Q3E
MOSFET 2N-CH 20V 39A 8VSON
Texas Instruments
7,208
In Stock
6,458
Marketplace
1 : ¥10.10000
Cut Tape (CT)
2,500 : ¥4.18767
Tape & Reel (TR)
670 : ¥3.27739
Bulk
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Bulk
Active
MOSFET (Metal Oxide)
2 N-Channel (Dual) Common Source
Logic Level Gate, 5V Drive
20V
39A
12.4mOhm @ 10A, 8V
1.4V @ 250µA
15.2nC @ 4.5V
2390pF @ 10V
2.5W
-55°C ~ 150°C (TJ)
Surface Mount
8-PowerVDFN
8-VSON (3.3x3.3)
PowerPAIR-3x3FS
SIZF5300DT-T1-GE3
MOSFET 2N-CH 30V 35A PWRPAIR
Vishay Siliconix
5,155
In Stock
1 : ¥16.34000
Cut Tape (CT)
3,000 : ¥6.84468
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
MOSFET (Metal Oxide)
2 N-Channel (Dual)
-
30V
35A (Ta), 125A (Tc)
2.43mOhm @ 10A, 10V
2V @ 250µA
32nC @ 10V
1480pF @ 15V
4.5W (Ta), 56.8W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
12-PowerPair™
PowerPAIR® 3x3FS
8-Power 5x6
FDMD86100
MOSFET 2N-CH 100V 10A 8PWR 5X6
onsemi
1,047
In Stock
1 : ¥44.66000
Cut Tape (CT)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Obsolete
MOSFET (Metal Oxide)
2 N-Channel (Dual) Common Source
-
100V
10A
10.5mOhm @ 10A, 10V
4V @ 250µA
30nC @ 10V
2060pF @ 50V
2.2W
-55°C ~ 150°C (TJ)
Surface Mount
8-PowerWDFN
8-Power 5x6
Showing
of 5

FET, MOSFET Arrays


Field-effect transistors (FET) are electronic devices which use an electric field to control the flow of current. Application of a voltage to the gate terminal alters the conductivity between the drain and source terminals. FETs are also known as unipolar transistors since they involve single-carrier-type operation. That is, FETs use electrons or holes as charge carriers in their operation, but not both. Field effect transistors generally display very high input impedance at low frequencies.