FET, MOSFET Arrays

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	Technology	Configuration	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power - Max	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package

SI4936BDY-T1-E3 MOSFET 2N-CH 30V 6.9A 8SOIC Vishay Siliconix	10,641 In Stock	1 : ¥7.55000 Cut Tape (CT) 2,500 : ¥3.11145 Tape & Reel (TR)	TrenchFET®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	MOSFET (Metal Oxide)	2 N-Channel (Dual)	Logic Level Gate	30V	6.9A	35mOhm @ 5.9A, 10V	3V @ 250µA	15nC @ 10V	530pF @ 15V	2.8W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
FDC8602 MOSFET 2N-CH 100V 1.2A SSOT6 onsemi	9,993 In Stock 6,000 Factory	1 : ¥12.31000 Cut Tape (CT) 3,000 : ¥5.09331 Tape & Reel (TR)	PowerTrench®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	MOSFET (Metal Oxide)	2 N-Channel (Dual)	-	100V	1.2A	350mOhm @ 1.2A, 10V	4V @ 250µA	2nC @ 10V	70pF @ 50V	690mW	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-6 Thin, TSOT-23-6	SuperSOT™-6

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FET, MOSFET Arrays

Field-effect transistors (FET) are electronic devices which use an electric field to control the flow of current. Application of a voltage to the gate terminal alters the conductivity between the drain and source terminals. FETs are also known as unipolar transistors since they involve single-carrier-type operation. That is, FETs use electrons or holes as charge carriers in their operation, but not both. Field effect transistors generally display very high input impedance at low frequencies.