GeneSiC Semiconductor Single Diodes

Results: 772
Series
-*MPS™SiC Schottky MPS™
Packaging
BulkCut Tape (CT)Digi-Reel®Tape & Reel (TR)Tube
Product Status
ActiveDiscontinued at Digi-KeyNot For New DesignsObsolete
Technology
SchottkySchottky, Reverse PolaritySiC (Silicon Carbide) SchottkyStandardStandard, Reverse Polarity
Voltage - DC Reverse (Vr) (Max)
20 V25 V30 V35 V40 V45 V50 V60 V80 V100 V150 V200 V
Current - Average Rectified (Io)
50mA300mA750mA1A2A2.5A4A4.3A5A6A8A9.4A
Voltage - Forward (Vf) (Max) @ If
440 mV @ 15 A470 mV @ 15 A500 mV @ 15 A520 mV @ 40 A550 mV @ 40 A580 mV @ 200 mA580 mV @ 25 A580 mV @ 150 A580 mV @ 200 A580 mV @ 300 A590 mV @ 40 A600 mV @ 150 A
Speed
-Fast Recovery =< 500ns, > 200mA (Io)No Recovery Time > 500mA (Io)Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr)
0 ns75 ns90 ns110 ns200 ns250 ns500 ns
Current - Reverse Leakage @ Vr
2 µA @ 1200 V3.8 µA @ 8000 V4 µA @ 1200 V5 µA @ 100 V5 µA @ 300 V5 µA @ 600 V5 µA @ 650 V5 µA @ 1200 V5 µA @ 3300 V6 µA @ 1700 V7 µA @ 1200 V10 µA @ 6.5 V
Capacitance @ Vr, F
25pF @ 1V, 1MHz42pF @ 1V, 1MHz66pF @ 1V, 1MHz69pF @ 1V, 1MHz73pF @ 1V, 1MHz76pF @ 1V, 1MHz127pF @ 1V, 1MHz131pF @ 1V, 1MHz138pF @ 1V, 1MHz237pF @ 1V, 1MHz260pF @ 1V, 1MHz274pF @ 1V, 1MHz
Mounting Type
Chassis MountChassis, Stud MountStud MountSurface MountThrough Hole
Package / Case
AxialD-67D-67 HALF-PAKDO-203AA, DO-4, StudDO-203AB, DO-5, StudDO-205AA, DO-8, StudDO-205AB, DO-9, StudDO-214AA, SMBTO-206AB, TO-46-3 Metal CanTO-220-2TO-220-2 Full PackTO-247-2TO-252-3, DPAK (2 Leads + Tab), SC-63TO-257-3
Supplier Device Package
-D-67DO-203ABDO-203AB (DO-5)DO-205AA (DO-8)DO-205AB (DO-9)DO-214AADO-214AA (SMB)DO-4DO-5DO-9TO-220-2TO-220FPTO-247-2
Operating Temperature - Junction
-65°C ~ 150°C-65°C ~ 160°C-65°C ~ 175°C-65°C ~ 180°C-65°C ~ 190°C-65°C ~ 200°C-60°C ~ 180°C-60°C ~ 200°C-55°C ~ 150°C-55°C ~ 155°C-55°C ~ 160°C-55°C ~ 175°C-55°C ~ 210°C-55°C ~ 225°C
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Price
Series
Package
Product Status
Technology
Voltage - DC Reverse (Vr) (Max)
Current - Average Rectified (Io)
Voltage - Forward (Vf) (Max) @ If
Speed
Reverse Recovery Time (trr)
Current - Reverse Leakage @ Vr
Capacitance @ Vr, F
Grade
Qualification
Mounting Type
Package / Case
Supplier Device Package
Operating Temperature - Junction
DO-214AA, SMB
GB01SLT06-214
DIODE SIL CARB 650V 1A DO214AA
GeneSiC Semiconductor
14,070
In Stock
1 : ¥13.38000
Cut Tape (CT)
3,000 : ¥8.29196
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
SiC (Silicon Carbide) Schottky
650 V
1A
2 V @ 1 A
No Recovery Time > 500mA (Io)
0 ns
10 µA @ 6.5 V
76pF @ 1V, 1MHz
-
-
Surface Mount
DO-214AA, SMB
DO-214AA
-55°C ~ 175°C
DO-214AA, SMB
GB01SLT12-214
DIODE SIL CARBIDE 1.2KV 2.5A SMB
GeneSiC Semiconductor
12,520
In Stock
1 : ¥21.10000
Cut Tape (CT)
3,000 : ¥13.79247
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
SiC (Silicon Carbide) Schottky
1200 V
2.5A
1.8 V @ 1 A
No Recovery Time > 500mA (Io)
0 ns
10 µA @ 1200 V
69pF @ 1V, 1MHz
-
-
Surface Mount
DO-214AA, SMB
DO-214AA (SMB)
-55°C ~ 175°C
DO-214AA, SMB
GB02SLT12-214
DIODE SIL CARB 1.2KV 2A DO214AA
GeneSiC Semiconductor
19,531
In Stock
1 : ¥26.27000
Cut Tape (CT)
3,000 : ¥17.65119
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
SiC (Silicon Carbide) Schottky
1200 V
2A
1.8 V @ 1 A
No Recovery Time > 500mA (Io)
0 ns
50 µA @ 1200 V
131pF @ 1V, 1MHz
-
-
Surface Mount
DO-214AA, SMB
DO-214AA
-55°C ~ 175°C
TO-252-2
GD10MPS12E
DIODE SIL CARB 1.2KV 29A TO252-2
GeneSiC Semiconductor
5,142
In Stock
1 : ¥29.39000
Cut Tape (CT)
2,500 : ¥18.96478
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
SiC (Silicon Carbide) Schottky
1200 V
29A
1.8 V @ 10 A
No Recovery Time > 500mA (Io)
0 ns
5 µA @ 1200 V
367pF @ 1V, 1MHz
-
-
Surface Mount
TO-252-3, DPAK (2 Leads + Tab), SC-63
TO-252-2
-55°C ~ 175°C
TO-220-2
GD10MPS12A
DIODE SIL CARB 1.2KV 25A TO220-2
GeneSiC Semiconductor
2,139
In Stock
1 : ¥31.94000
Tube
Tube
Active
SiC (Silicon Carbide) Schottky
1200 V
25A
1.8 V @ 10 A
No Recovery Time > 500mA (Io)
0 ns
5 µA @ 1200 V
367pF @ 1V, 1MHz
-
-
Through Hole
TO-220-2
TO-220-2
-55°C ~ 175°C
TO-220-2
GD20MPS12A
DIODE SIL CARB 1.2KV 42A TO220-2
GeneSiC Semiconductor
2,327
In Stock
1 : ¥52.38000
Tube
Tube
Active
SiC (Silicon Carbide) Schottky
1200 V
42A
1.8 V @ 20 A
No Recovery Time > 500mA (Io)
0 ns
10 µA @ 1200 V
737pF @ 1V, 1MHz
-
-
Through Hole
TO-220-2
TO-220-2
-55°C ~ 175°C
GD10MPS17H
GD10MPS17H
DIODE SIL CARB 1.7KV 26A TO247-2
GeneSiC Semiconductor
1,857
In Stock
1 : ¥67.07000
Tube
Tube
Active
SiC (Silicon Carbide) Schottky
1700 V
26A
1.8 V @ 10 A
No Recovery Time > 500mA (Io)
0 ns
20 µA @ 1700 V
721pF @ 1V, 1MHz
-
-
Through Hole
TO-247-2
TO-247-2
-55°C ~ 175°C
DO-214AA, SMB
GAP3SLT33-214
DIODE SIC 3.3KV 300MA DO214AA
GeneSiC Semiconductor
4,731
In Stock
1 : ¥88.34000
Cut Tape (CT)
3,000 : ¥64.28310
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
SiC (Silicon Carbide) Schottky
3300 V
300mA
2.2 V @ 300 mA
-
0 ns
10 µA @ 3300 V
42pF @ 1V, 1MHz
-
-
Surface Mount
DO-214AA, SMB
DO-214AA
-55°C ~ 175°C
GD50MPS12H
GD50MPS12H
DIODE SIL CARB 1.2KV 92A TO247-2
GeneSiC Semiconductor
200
In Stock
1 : ¥129.47000
Tube
Tube
Active
SiC (Silicon Carbide) Schottky
1200 V
92A
1.8 V @ 50 A
No Recovery Time > 500mA (Io)
0 ns
15 µA @ 1200 V
1835pF @ 1V, 1MHz
-
-
Through Hole
TO-247-2
TO-247-2
-55°C ~ 175°C
GD25MPS17H
GD25MPS17H
DIODE SIL CARB 1.7KV 56A TO247-2
GeneSiC Semiconductor
2,336
In Stock
1 : ¥147.86000
Tube
Tube
Active
SiC (Silicon Carbide) Schottky
1700 V
56A
1.8 V @ 25 A
No Recovery Time > 500mA (Io)
0 ns
20 µA @ 1700 V
1083pF @ 1V, 1MHz
-
-
Through Hole
TO-247-2
TO-247-2
-55°C ~ 175°C
TO2472
GD60MPS17H
DIODE SIL CARB 1.7KV 122A TO247
GeneSiC Semiconductor
568
In Stock
1 : ¥378.31000
Tube
Tube
Active
SiC (Silicon Carbide) Schottky
1700 V
122A
1.8 V @ 60 A
Fast Recovery =< 500ns, > 200mA (Io)
-
40 µA @ 1700 V
4577pF @ 1V, 1MHz
-
-
Through Hole
TO-247-2
TO-247-2
-55°C ~ 175°C
GD25MPS17H
GC50MPS33H
DIODE SIL CARB 3.3KV 50A TO247-2
GeneSiC Semiconductor
130
In Stock
1 : ¥2,010.17000
Tube
Tube
Active
SiC (Silicon Carbide) Schottky
3300 V
50A
-
No Recovery Time > 500mA (Io)
0 ns
-
-
-
-
Through Hole
TO-247-2
TO-247-2
175°C
TO-252-2
GD02MPS12E
DIODE SIL CARB 1.2KV 8A TO252-2
GeneSiC Semiconductor
1,525
In Stock
1 : ¥11.90000
Cut Tape (CT)
2,500 : ¥7.22466
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
SiC (Silicon Carbide) Schottky
1200 V
8A
1.8 V @ 2 A
No Recovery Time > 500mA (Io)
0 ns
5 µA @ 1200 V
73pF @ 1V, 1MHz
-
-
Surface Mount
TO-252-3, DPAK (2 Leads + Tab), SC-63
TO-252-2
-55°C ~ 175°C
GD05MPS17H
GD05MPS17H
DIODE SIL CARB 1.7KV 15A TO247-2
GeneSiC Semiconductor
924
In Stock
1 : ¥43.43000
Tube
Tube
Active
SiC (Silicon Carbide) Schottky
1700 V
15A
1.8 V @ 5 A
No Recovery Time > 500mA (Io)
0 ns
20 µA @ 1700 V
361pF @ 1V, 1MHz
-
-
Through Hole
TO-247-2
TO-247-2
-55°C ~ 175°C
GD25MPS17H
GD30MPS06H
DIODE SIL CARB 650V 49A TO247-2
GeneSiC Semiconductor
688
In Stock
1 : ¥48.52000
Tube
Tube
Active
SiC (Silicon Carbide) Schottky
650 V
49A
-
No Recovery Time > 500mA (Io)
-
-
735pF @ 1V, 1MHz
-
-
Through Hole
TO-247-2
TO-247-2
-55°C ~ 175°C
1N3881
1N3881
DIODE GEN PURP 200V 6A DO4
GeneSiC Semiconductor
487
In Stock
1 : ¥58.54000
Bulk
-
Bulk
Active
Standard
200 V
6A
1.4 V @ 6 A
Fast Recovery =< 500ns, > 200mA (Io)
200 ns
15 µA @ 50 V
-
-
-
Chassis, Stud Mount
DO-203AA, DO-4, Stud
DO-4
-65°C ~ 150°C
GD25MPS17H
GD20MPS12H
DIODE SIL CARB 1.2KV 39A TO247-2
GeneSiC Semiconductor
3,139
In Stock
1 : ¥58.70000
Tube
Tube
Active
SiC (Silicon Carbide) Schottky
1200 V
39A
1.8 V @ 20 A
No Recovery Time > 500mA (Io)
0 ns
10 µA @ 1200 V
737pF @ 1V, 1MHz
-
-
Through Hole
TO-247-2
TO-247-2
-55°C ~ 175°C
TO2472
GD30MPS12H
DIODE SIL CARB 1.2KV 55A TO247-2
GeneSiC Semiconductor
460
In Stock
1 : ¥81.11000
Tube
Tube
Active
SiC (Silicon Carbide) Schottky
1200 V
55A
1.8 V @ 30 A
Fast Recovery =< 500ns, > 200mA (Io)
-
20 µA @ 1200 V
1101pF @ 1V, 1MHz
-
-
Through Hole
TO-247-2
TO-247-2
-55°C ~ 175°C
1N1184A
1N1184A
DIODE GEN PURP 100V 40A DO5
GeneSiC Semiconductor
768
In Stock
1 : ¥84.73000
Bulk
-
Bulk
Active
Standard
100 V
40A
1.1 V @ 40 A
Standard Recovery >500ns, > 200mA (Io)
-
10 µA @ 50 V
-
-
-
Chassis, Stud Mount
DO-203AB, DO-5, Stud
DO-5
-65°C ~ 200°C
GD25MPS17H
GD60MPS06H
DIODE SIL CARB 650V 82A TO247-2
GeneSiC Semiconductor
1,121
In Stock
1 : ¥84.81000
Tube
Tube
Active
SiC (Silicon Carbide) Schottky
650 V
82A
1.8 V @ 60 A
No Recovery Time > 500mA (Io)
0 ns
10 µA @ 650 V
1463pF @ 1V, 1MHz
-
-
Through Hole
TO-247-2
TO-247-2
-55°C ~ 175°C
GD15MPS17H
GD15MPS17H
DIODE SIL CARB 1.7KV 36A TO247-2
GeneSiC Semiconductor
1,248
In Stock
1 : ¥91.38000
Tube
Tube
Active
SiC (Silicon Carbide) Schottky
1700 V
36A
1.8 V @ 15 A
No Recovery Time > 500mA (Io)
0 ns
20 µA @ 1700 V
1082pF @ 1V, 1MHz
-
-
Through Hole
TO-247-2
TO-247-2
-55°C ~ 175°C
S85Q
S85Q
DIODE GEN PURP 1.2KV 85A DO5
GeneSiC Semiconductor
495
In Stock
1 : ¥123.48000
Bulk
-
Bulk
Active
Standard
1200 V
85A
1.1 V @ 85 A
Standard Recovery >500ns, > 200mA (Io)
-
10 µA @ 100 V
-
-
-
Chassis, Stud Mount
DO-203AB, DO-5, Stud
DO-5
-65°C ~ 180°C
DIODE SIL CARB 3.3KV 5A TO263-7
GC05MPS33J
DIODE SIL CARB 3.3KV 5A TO263-7
GeneSiC Semiconductor
1,567
In Stock
1 : ¥196.95000
Tube
Tube
Active
SiC (Silicon Carbide) Schottky
3300 V
5A
-
No Recovery Time > 500mA (Io)
0 ns
-
-
-
-
Surface Mount
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
TO-263-7
175°C
S300Y
S300Y
DIODE GEN PURP 1.6KV 300A DO9
GeneSiC Semiconductor
65
In Stock
1 : ¥538.32000
Bulk
-
Bulk
Active
Standard
1600 V
300A
1.2 V @ 300 A
Standard Recovery >500ns, > 200mA (Io)
-
10 µA @ 1600 V
-
-
-
Chassis, Stud Mount
DO-205AB, DO-9, Stud
DO-9
-60°C ~ 180°C
GD25MPS17H
GD10MPS12H
DIODE SIL CARB 1.2KV 10A TO247-2
GeneSiC Semiconductor
2,686
In Stock
1 : ¥38.67000
Tube
Tube
Active
SiC (Silicon Carbide) Schottky
1200 V
10A
-
No Recovery Time > 500mA (Io)
0 ns
-
-
-
-
Through Hole
TO-247-2
TO-247-2
175°C
Showing
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GeneSiC Semiconductor Single Diodes

Products within the single rectifier diode family are used to allow current flow in one direction only, and implement exactly one instance of this function per device package. Diodes used for other purposes (including zener and variable capacitance diodes) are listed separately in product families of their own, as are products incorporating multiple diodes per device package.