Bipolar Transistor Arrays

Results: 3
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Transistor Type
2 NPN (Dual)2 PNP (Dual)
Current - Collector (Ic) (Max)
200mA3A
Vce Saturation (Max) @ Ib, Ic
170mV @ 200mA, 2A300mV @ 5mA, 50mA
Current - Collector Cutoff (Max)
100nA (ICBO)-
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 10mA, 1V180 @ 1A, 2V
Power - Max
150mW653mW
Frequency - Transition
100MHz300MHz
Package / Case
6-TSSOP, SC-88, SOT-3638-SOIC (0.154", 3.90mm Width)
Supplier Device Package
8-SOICSC-88/SC70-6/SOT-363
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
Transistor Type
Current - Collector (Ic) (Max)
Voltage - Collector Emitter Breakdown (Max)
Vce Saturation (Max) @ Ib, Ic
Current - Collector Cutoff (Max)
DC Current Gain (hFE) (Min) @ Ic, Vce
Power - Max
Frequency - Transition
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
SOT-363
MBT3904DW1T1G
TRANS 2NPN 40V 0.2A SC88/SC70-6
onsemi
291,790
In Stock
1 : ¥1.64000
Cut Tape (CT)
3,000 : ¥0.29054
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
2 NPN (Dual)
200mA
40V
300mV @ 5mA, 50mA
-
100 @ 10mA, 1V
150mW
300MHz
-55°C ~ 150°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
SC-88/SC70-6/SOT-363
8 SOIC
NSV40300MDR2G
TRANS 2PNP 40V 3A 8SOIC
onsemi
2,478
In Stock
1 : ¥6.98000
Cut Tape (CT)
2,500 : ¥2.89300
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
2 PNP (Dual)
3A
40V
170mV @ 200mA, 2A
100nA (ICBO)
180 @ 1A, 2V
653mW
100MHz
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
8 SOIC
NSS40300MDR2G
TRANS 2PNP 40V 3A 8SOIC
onsemi
471
In Stock
15,000
Factory
1 : ¥7.55000
Cut Tape (CT)
2,500 : ¥2.50399
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
2 PNP (Dual)
3A
40V
170mV @ 200mA, 2A
100nA (ICBO)
180 @ 1A, 2V
653mW
100MHz
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
Showing
of 3

Bipolar Transistor Arrays


Bipolar transistor arrays incorporate two or more discrete transistors in a shared package, either as electrically separate entities or with interconnections of some form between them being made inside the device package. Arrays in which the devices contained have closely matched or complementary characteristics, the co-packaged character minimizes temperature differences between devices during operation.